D02S60C Search Results

d02s60c

Abstract: idv02s60c d02s60 JESD22 d02s6
Contextual Info: IDV02S60C 2nd Generation thinQ!TM SiC Schottky Diode Fully isolated package with similar Rth,jc as the standard T0220 by using proprietary die attach processing Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark

d02s60c

Abstract: Infineon power diffusion process Schottky diode TO220 ThinQ JESD22 d02s60
Contextual Info: SiC Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Data Sheet Rev. 2.0, 2010-05-31 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV02S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the

d02s60c

Abstract: IDT02S60C d02s60 PG-TO220 JESD22 IDT02S60
Contextual Info: IDT02S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Product Summary V DC 600 V • Revolutionary semiconductor material - Silicon Carbide Qc 3.2 nC • No reverse recovery/ no forward recovery IF 2 A • Temperature independent switching behavior

d02s60c

Contextual Info: IDT02S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 3.2 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 2 A I F @ T C < 100°C 3 A • Revolutionary semiconductor material - Silicon Carbide

Contextual Info: SiC Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Data Sheet Rev. 2.0, 2010-05-31 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV02S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the