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    D02G120

    Abstract: IDH02SG120 JESD22 J1028
    Contextual Info: IDH02SG120 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery V DC 1200 600 V QC 3.2 7.2 nC 3 2 A I F; T C< 130 °C


    Original     		IDH02SG120 PG-TO220-2 D02G120 IDH02SG120 JESD22 J1028 PDF

    IDH02SG120

    Contextual Info: IDH02SG120 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery V DC 1200 600 V QC 3.2 7.2 nC 3 2 A I F; T C< 130 °C


    Original     		IDH02SG120 PG-TO220-2 IDH02SG120 PDF

    D02G120

    Abstract: PG-TO220-2 IDH02SG120 JESD22
    Contextual Info: IDH02SG120 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery V DC 1200 V QC 7.2 nC 2 A I F; T C< 130 °C


    Original     		IDH02SG120 PG-TO220-2 IDH02ngerous D02G120 PG-TO220-2 IDH02SG120 JESD22 PDF