IDB10S60C Search Results

IDB10S60C Datasheets (2)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IDB10S60C		Infineon Technologies	Silicon Carbide Schottky Diodes - NEW 3G now available!; Package: PG-TO220-3; Technology: thinQ! 2G; V: 600.0 V; I_F (typ): 10.0 A; Q_C (typ): 24.0 nC; Package: D2PAK (TO-263)	Original	PDF	229.73KB	7
IDB10S60CATMA2		Infineon Technologies	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 600V 10A D2PAK	Original	PDF	499.69KB

IDB10S60C Price and Stock

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Infineon Technologies AG


Infineon Technologies AG IDB10S60C Diode Schottky 600V 10A 3-Pin(2+Tab) D2PAK T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IDB10S60C		10			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IDB10S60C		8			1 $15.00 10 $10.00 100 $10.00 1000 $10.00 10000 $10.00	Buy Now
Vyrian	IDB10S60C		6,805			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IDB10S60CATMA2 Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon Carbide
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IDB10S60CATMA2		7,137			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IDB10S60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IDB10S60C Abstract: PG-TO220-3-45 D10S60C JESD22 Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	idb10s60c d10s60c pg-to220-3-45 jesd22	PDF
Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	idb10s60c pg-to263-3-2 d10s60c	PDF
D10S60C Abstract: IDB10S60C JESD22 D10S60 Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	idb10s60c pg-to220-3-45 d10s60c jesd22 +1d10s60	PDF
Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	idb10s60c pg-to220-3-45 d10s60c	PDF
Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	idb10s60c pg-to220-3-45 d10s60c	PDF
Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	idb10s60c d10s60c	PDF
igbt welding machine scheme Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3 Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and	Original	igbt welding machine scheme ikw40n120h3 aircon l1 smd diode schottky code marking sj +6transistor marking code 12w sot-23 24v application with ice3ar0680jz induction cooker fault finding ipw65r041 igw40n60h3 spw55n80c3	PDF
PX3544 Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly	Original	lead519 b152-h9345-g2-x-7600 px3544 px7510 +8px3560 ice2as01 equivalent px3540 primarion px3540 ice3br0665j primarion px3560 ice3br4765 ice3br1765j	PDF
Infineon diffusion solder Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v Contextual Info: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices	Original	600/650v sdb06s60 idd02sg60c idd03sg60c +16idd04sg60c idd05sg60c idd06sg60c idd08sg60c idd09sg60c idd10sg60c infineon diffusion solder infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400v 5a idv06s60c diode 400v 4a idw16g65c5 idv02s60c schottky 400v	PDF