D10S60 Search Results
D10S60 Price and Stock
Samtec Inc FFSD-10-S-60.00-01-N-SRCable Assembly Flat Ribbon 30AWG 1.5m 20 Position IDC Connector Receptacle - Bulk (Alt: FFSD-10-S-60.00-01-N-SR) |
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FFSD-10-S-60.00-01-N-SR | Bulk | 1 Weeks, 5 Days | 1 |
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FFSD-10-S-60.00-01-N-SR | 1 |
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Samtec Inc HCSD-10-S-60.00-01- Bulk (Alt: HCSD-10-S-60.00-01) |
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HCSD-10-S-60.00-01 | Bulk | 1 Weeks, 3 Days | 1 |
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HCSD-10-S-60.00-01 | 1 |
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Samtec Inc TCMD-10-S-60.00-01-SR2.00 MM IDC RIBBON CABLE ASSEMBLY - Bulk (Alt: TCMD-10-S-60.00-01-SR) |
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TCMD-10-S-60.00-01-SR | Bulk | 2 Weeks, 6 Days | 1 |
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TCMD-10-S-60.00-01-SR | Each | 1 |
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TCMD-10-S-60.00-01-SR | 1 |
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Samtec Inc HCMD-10-S-60.00-01IDC Socket and Terminal Cable Assemblies, 0.1 - Bulk (Alt: HCMD-10-S-60.00-01) |
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HCMD-10-S-60.00-01 | Bulk | 1 Weeks, 6 Days | 1 |
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HCMD-10-S-60.00-01 | 1 |
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Samtec Inc HCSD-10-S-60.00-01-NCable Assembly Ribbon 1.524m 20 POS IDC RCP - Bulk (Alt: HCSD-10-S-60.00-01-N) |
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HCSD-10-S-60.00-01-N | Bulk | 1 Weeks, 3 Days | 1 |
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HCSD-10-S-60.00-01-N | 1 |
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D10S60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IDB10S60C
Abstract: PG-TO220-3-45 D10S60C JESD22
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idb10s60cd10s60cpg-to220-3-45jesd22 | |
D10S60C
Abstract: IDH10S60C JESD22
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idh10s60cpg-to220-2d10s60cjesd22 | |
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Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
Original |
idb10s60cpg-to263-3-2d10s60c | |
D10S60C
Abstract: IDB10S60C JESD22 D10S60
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idb10s60cpg-to220-3-45d10s60cjesd22+1 | |
D10S60C
Abstract: IDT10S60C JESD22
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idt10s60cpg-to220-2-2d10s60cjesd22 | |
AN 22022Contextual Info: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery |
Original |
sdt10s60pg-to220-2-2q67040s4643d10s60+1 | |
d10s60cContextual Info: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
Original |
idt10s60cpg-to220-2-2d10s60c | |
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Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
Original |
idb10s60cpg-to220-3-45d10s60c | |
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Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
Original |
idb10s60cpg-to220-3-45d10s60c | |
d10s60c
Abstract: W6015 IDT10S60C JESD22
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idt10s60cpg-to220-2-2d10s60cw6015+1 | |
SDT10S60Contextual Info: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery |
Original |
sdt10s60p-to220-2-2d10s60q67040s4643 | |
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Contextual Info: IDT10S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 24 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 10 A I F @ T C < 100 °C 15 A • Revolutionary semiconductor material - Silicon Carbide |
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idt10s60cpg-to220-2-220ma2 | |
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Contextual Info: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
Original |
idh10s60cpg-to220-2d10s60c | |
D10S60
Abstract: DIODE 200A 600V schottky PG-TO-220-2-2 Schottky diode TO220 SDT10S60
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Original |
sdt10s60pg-to220-2-2d10s60q67040s4643+3 | |
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D10S60CContextual Info: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
Original |
idh10s60cpg-to220-2d10s60c | |
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Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
Original |
idb10s60cd10s60c | |