D10S60 Search Results
D10S60 Price and Stock
Samtec Inc IDSD-10-S-60.00INSULATION DISPLACEMENT TERMINAL |
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Samtec Inc HCSD-10-S-60.00-01IDC SOCKET AND TERMINAL CABLE AS |
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Samtec Inc HCMD-10-S-60.00-01"IDC SOCKET AND TERMINAL CABLE A |
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Samtec Inc TCMD-10-S-60.00-012MM DOUBLE ROW MALE IDC ASSEMBLY |
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Samtec Inc FFMD-10-S-60.79-01.050" TIGER EYE IDC RIBBON CABL |
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D10S60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IDB10S60C
Abstract: PG-TO220-3-45 D10S60C JESD22
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IDB10S60C D10S60C IDB10S60C PG-TO220-3-45 D10S60C JESD22 | |
D10S60C
Abstract: IDH10S60C JESD22
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IDH10S60C PG-TO220-2 D10S60C D10S60C IDH10S60C JESD22 | |
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Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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IDB10S60C PG-TO263-3-2) D10S60C | |
D10S60C
Abstract: IDB10S60C JESD22 D10S60
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IDB10S60C PG-TO220-3-45) D10S60C D10S60C IDB10S60C JESD22 D10S60 | |
D10S60C
Abstract: IDT10S60C JESD22
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IDT10S60C PG-TO220-2-2 D10S60C PG-TO220-2-2: D10S60C IDT10S60C JESD22 | |
AN 22022Contextual Info: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery |
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SDT10S60 PG-TO220-2-2. Q67040S4643 D10S60 AN 22022 | |
d10s60cContextual Info: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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IDT10S60C PG-TO220-2-2 IDT10S60C PG-TO220-2-2 D10S60C | |
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Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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IDB10S60C PG-TO220-3-45 D10S60C | |
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Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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IDB10S60C PG-TO220-3-45) D10S60C | |
d10s60c
Abstract: W6015 IDT10S60C JESD22
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IDT10S60C PG-TO220-2-2 D10S60C d10s60c W6015 IDT10S60C JESD22 | |
SDT10S60Contextual Info: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery |
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SDT10S60 P-TO220-2-2. D10S60 Q67040S4643 SDT10S60 | |
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Contextual Info: IDT10S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 24 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 10 A I F @ T C < 100 °C 15 A • Revolutionary semiconductor material - Silicon Carbide |
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IDT10S60C PG-TO220-2-2 20mA2) | |
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Contextual Info: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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IDH10S60C IDH10S60C PG-TO220-2 D10S60C | |
D10S60
Abstract: DIODE 200A 600V schottky PG-TO-220-2-2 Schottky diode TO220 SDT10S60
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SDT10S60 PG-TO220-2-2. D10S60 Q67040S4643 PG-TO-220-2-2 D10S60 DIODE 200A 600V schottky PG-TO-220-2-2 Schottky diode TO220 SDT10S60 | |
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D10S60CContextual Info: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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IDH10S60C PG-TO220-2 D10S60C D10S60C | |
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Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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IDB10S60C D10S60C | |