TFK 101 Search Results

TFK 305

Abstract: tfk 226 0/TFK 036
Contextual Info: A tfK c m "INTERCONNECT DIVISION OSX Microminiature Snap-On Connectors and Adapters OSX subminiature snap-on connectors from M/A-COM are an excellent blend of size, weight, durability and performance for applications such as GPS, automotive and wireless communications. OSX connectors are 30% smaller

Vishay LCD

Abstract: LCD-160H128B-TFK-VZ LCD-160H128B
Contextual Info: LCD-160H128B-TFK-VZ www.vishay.com Vishay 160 x 128 Graphic LCD FEATURES • Type: Graphic • Display format: 160 x 128 dots • Built-in controller: RA6963 • Duty cycle: 1/128 • + 5 V power supply • Optional N.V. • Material categorization: For definitions of compliance

TFK BSV 60

Abstract: c20m TFK 175 tfk a BSV16
Contextual Info: BSV 15 • BSV 16 Silizium-PNP-Epitaxial-Planar-Schalttransistoren Silicon PNP Epitaxial Planar Switching Transistors Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and switches Besondere Merkmale: Features: • Verlustleistung 3,2 W

3 tfk 206

Abstract: tfk Phototransistor TFK 201 DIN 50014 STANDARD Vishay Telefunken tfk transistor MCT62H tfk order
Contextual Info: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using

Contextual Info: 19-0625; Rev 1; 1/07 EEPROM-Programmable, High-Voltage, 350mA LED Drivers with LED Current Foldback The MAX16805/MAX16806 LED drivers eliminate the need for microcontrollers or switch-mode converters for automotive interior dome, map, and courtesy light applications. An EEPROM-programmable LED currentsense reference simplifies production by using one

MCT62H

Abstract: E-76222 Vishay Telefunken tfk
Contextual Info: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using

TSML3710-GS08

Contextual Info: TSML3710 Vishay Telefunken GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PL–CC–2 SMD package. Features D SMT IRED with extra high radiant power D Low forward voltage

Contextual Info: CNY74–2H/ CNY74–4H Vishay Telefunken Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package.

TFK 600

Abstract: p460a
Contextual Info: E T F 8 1 - 5 5 A l ^ f J fê 'v b 'i : O u tlin e D raw ing s POWER TRANSISTOR MODULE : Features • 7 'J —fc'f U 's W 'i 'X — K r t l i • h F E ^ iftl.' • In c lu d in g Free W h e e lin g D tode H ig h DC C u rre n t Gain Tab type terminals {AMP No. 250 eou^walent)

Square D 20 amp breaker

Abstract: Cutler-Hammer fdb Cutler-Hammer 225 amp circuit breaker tfk 223 TFK 148 FLB362-TT70-3 FLB140-WT20-2 FLB141-TT40-3 FLB267-WT125-2 FLB174-DT100-2
Contextual Info: 2: 5: SYS19: BASE2 PDFINFO 50: 95: 98: JOB: CRTEST06-3375-0 Name: 3C-375 100: DATE: JAN 19 2006 Time: 6:18:48 PM Operator: GK COLOR: CMYK FLB Circuit Breakers and Enclosures TCP: 15001 Cl. I, Div. 1 & 2, Groups C,D Cl. II, Div. 1, Groups E,F,G Cl. II, Div. 2, Groups F,G

Contextual Info: S G S -T H O M S O N !tLi TFK©[MD©i „„ T S T M 901 -30 RF POWER MODULE LINEAR BASE STATION APPLICATIONS P RODUCT D E V E L OP ME N T DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under

RC 4565

Abstract: AN7420
Contextual Info: , *7 T*Ü 4Meg x 1 Monolithic DRAM molate MDM14000-80/10/12 Issue 3.0 : March 1992 Mosaic Semiconductor Inc. Pin Definition Package Type: r .V .'G ', 'W.'J' 4,194,304 x 1 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns Available in 20 Pin DIP,20 & 24 Pin VIL

sega mega drive

Abstract: phct sega mega drive RF IRH7230 IRH8230
Contextual Info: Data Sheet No. PD-9.678A INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED IRH7S30 HEXFET TRANSISTORS Q „ IRH8S30 N-CHANNEL MEGA RAD HARD 200 Volt, 0.400, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD Technology HEXFETk demonstrate excellent threshold voltage stability and breakdown

tfk 136

Contextual Info: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

TFK 851

Abstract: 5 TFK 327 6 OPA445SM bhrd TFK 311
Contextual Info: COR p H E D | l? 3 1 3 b S GD1S343 BURR-BROWN [ S | COMPONENTS OPA445SM/883B ] OPA445SM/883B BURR-BROUN REVISION NONE FEBRUARY, 1989 High Voltage, FET-lnput, Monolithic MILITARY OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • •

TFK 748

Abstract: OPA837 SOL16 Package NATC tfk 810 TFK 413 TFK 637 tfk 4 132 tfk 014 opab
Contextual Info: OPA6Q3 High Speed, Current-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • BANDWIDTH: 100MHz, G s 1 to 10 • VIDEO AMPLIFIER • SLEW RATE: 1000V/|is • FAST SETTLING TIME: 50na to 0.1% • WIDE SUPPLY RANGE: ±4.5 to ±18V • HIGH OUTPUT CURRENT: ±150mA peak

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

4N 26 TFK

Contextual Info: T O S H IB A TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Photo diode TFK S 186 P

Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Contextual Info: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

rgn 1064

Abstract: RGN2004 RGN1503 UY1N rgn1064 TFK 19 018 rgn 1883 RGN504 TFK 036 GN2004
Contextual Info: Type y erw. ff V AB 1 i/ fM AX 1 A X 50 , 298 (A 1 /7 7 (V) AB 1 D+D 0.65 200 2 x 0.8 AB 2 D-D 0.65 200 2 x 0 .8 AX 1 ZW A X 50 ZW 3,75 2x500 AZ 1 ZW 1.1 2x500 2x300 AZ 2 ZW 2 2 X 300 AZ 3 ZW 2 2x350 AZ 4 ZW 2,2 8^500 A Z 11 ZW 1.1 2 a 500 2x300 A Z 12 ZW

SN75976A

Abstract: SN75LBC976 TR30 20 pin FRC connector si3750
Contextual Info: SN75976A 9-CHANNEL DIFFERENTIAL TRANSCEIVER SLLS218 - MAY 1995 • Improved Speed and Package Replacement for the SN75LBC976 • Designed to Operate at up to 20 Million Data Transfers per Second Fast-20 SCSI • Nine Differential Channels for the Data and

TFK 526

Abstract: TFK 626 E 1024 Pioneer pa 4010 sie200 Pioneer PA 0016 TFK 839 AEG TFK TELEFUNKEN Tfk 880 745 TFK U 3212 M tfk U 209 B 55 A 436
Contextual Info: Tem ic Sales Offices Semiconductors Addresses Europe Denmark Italy Sweden TEMIC Dansk c/o AEG Industri A/S Roskildevej 8 -10 2620 Albertsiund Tel: 45 42 6485 22 Fax: 45 43 6262 28 TEMIC TELEFUNKEN micro­ electronic GmbH Kruppstrasse 6 45128 Essen Tel: 49 201 24730 0

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ iP D 9 8 4 1 1 ATM QUAD SONET FRAMER T h e ^¡P D 98411 N E A S C O T -P 4 0 is one o f A T M -LA N LSIs and provides the fu n ctio n s o f the T C sub la yer o f the S O N E T /S D H -b a se physical layer o f the ATM protocol spe cifie d by the ATM Forum .

Contextual Info: PRELIMINARY A A |^ C a r ~ |l\J I MT2LSYT3272T1/T2, MT4LSY6472T1/T2 32K, 64K x 72 SYNCHRONOUS SRAM MODULE SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS AND BURST COUNTER FEATURES PIN ASSIGNMENT Top View • 80 p o sitio n d u al read -o u t d u al in -lin e m em o ry m o d u le