TEST CIRCUITS FOR MOSFET CAPACITANCE Search Results

diode AR S1 99

Abstract: S3 DIODE schottky 486 smps
Contextual Info: Advanced Technical Information Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 HiPerFET MOSFET Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V Transient

calculating of switching transformer

Abstract: 200khz power mosfet test circuits for Mosfet capacitance mosfet power totem pole CIRCUIT pulse transformer fet zvs ZCS 3 5 3 5 calculating rectifier circuits fast switching FET forward converter zvs driver
Contextual Info: A More Realistic Characterization Of Power MOSFET Output Capacitance Coss The Power MOSFET has gained popularity and become the dominant switching device in power electronics since 1975. Its fast switching speed has extended power conversion switching frequencies from the 20kHz range of

2N60B

Abstract: 2N60A 2N60 power mosfet 2N60 TO-251 UTC 2n60 2n60 MOSFEt 2N60G 2N60L equivalent utc 2n60l 2n60 equivalent
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65L Preliminary 2A, 650V N-CHANNEL POWER MOSFET „ 1 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5.0Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability

2n60b

Abstract: 2N60A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION FEATURES „ 1 1 TO-220 TO-220F 1 1 * RDS ON =12.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability

utc 4n60l

Abstract: 4n60e mosfet 4n60 utc 4n60g 4N60 4n60l 4N60-E UTC4N60 4N60G-TQ3-T A4N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability

75n75

Abstract: n-channel, 75v, 80a mosfet to220 75N75 MOSFET 20V 80A high power mosfet transistor n-channel, 75v, 40a "Power MOSFET" POWER MOSFET DATA BOOK power relay N-channel mosfet FSM75N75
Contextual Info: N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET FSM75N75 „ FEATURES Part No VD S S at Tj(max RD S ( o n ) ID FSM75N75 75V <0.011Ω 80A GENERAL DESCRIPTION This Power MOSFET series has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability

12N60G

Abstract: 12N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 1 TO-220F TO-220F1 FEATURES * RDS ON = 0.8Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET 1  FEATURES * RDS ON =11mΩ @VGS=10V, ID=40A * Ultra low gate charge ( typical 117 nC ) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 240 pF )

Contextual Info: ä m t— — m h IE IC ; HIGH PERFORMANCE ANAlDG INTEGRATED CIRCUITS Features • Industry standard driver replacement • Improved response times • M atched rise and fall times • Reduced clock skew • Low output impedance • Low input capacitance • High noise immunity

10MHz ultrasound pulser

Abstract: logic pulser ultrasound transducer high power driver ultrasound transducer circuit driver ultrasound piezo pulser circuit ultrasound pulser ic P-Channel FET 100v ultrasound transducer Input output waveforms ultrasound piezoelectric design probe transducer piezo cable
Contextual Info: HV732DB1 High Speed ±100V 2A Integrated Ultrasound Pulser Demo Board Introduction CW waveforms. The up frequency limit of this IC is as high as 35MHz to 40MHz dependent on the load capacitance. The HV732 is a complete, high-speed, high voltage, ultrasound

SMPS SOT23-6

Abstract: constant current smps circuit diagram PWM controller sot23-6 sot23-6 CAMSEMI Primary Sensing SMPS Controller cP SOT23-6 Transformer ee19
Contextual Info: C2283 Datasheet Primary Side Sensing SMPS Controller with MOSFET Drive KEY FEATURES AND ADVANTAGES • Advanced primary sensing controller achieves accurate regulation without an opto-coupler • Constant power feature o Optimised for fast start-up in to constant power loads with large capacitance

B0731

Contextual Info: HV9606 HV9606 Current-Mode PWM Controller 3.3V, 5V Operation No Bootstrap needed Features General Description Synchronous Forward, Forward, and Flyback Controller Lowest External Parts Count, Smallest Magnetics Eliminates Bootstrap Transformer Winding Supervisor Circuit Reduces Output Capacitance* up to 40%

Contextual Info: HV9606 HV9606 Current-Mode PWM Controller 3.3V, 5V Operation No Bootstrap needed Features General Description Synchronous Forward, Forward, and Flyback Controller Lowest External Parts Count, Smallest Magnetics Eliminates Bootstrap Transformer Winding Supervisor Circuit Reduces Output Capacitance* up to 40%

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1  1 1 TO-220F1 FEATURES * RDS ON < 0.4Ω@ VGS = 10V, ID = 5A * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = typical 80 pF ) * Fast Switching Capability

HV9606

Abstract: HV9606SP HV9606X SSOP-20
Contextual Info: HV9606 Initial Release HV9606 Current-Mode PWM Controller with Supervisor Features General Description Synchronous Forward, Forward, and Flyback Controller Lowest External Parts Count, Smallest Magnetics Eliminates Bootstrap Transformer Winding Supervisor Circuit Reduces Output Capacitance* up to 40%

Soft start pump circuit

Abstract: HV9606 HV9606SP HV9606X SSOP-20 sync doubler
Contextual Info: HV9606 Initial Release HV9606 Current-Mode PWM Controller with Supervisor Features General Description Synchronous Forward, Forward, and Flyback Controller Lowest External Parts Count, Smallest Magnetics Eliminates Bootstrap Transformer Winding Supervisor Circuit Reduces Output Capacitance* up to 40%

60NM50N

Abstract: STW60NM50 60nm50 STW60NM50N
Contextual Info: STW60NM50N N-channel 500 V, 0.035 Ω, 68 A, MDmesh II Power MOSFET in TO-247 package Datasheet — preliminary data Features Type VDSS @Tjmax RDS(on) max ID STW60NM50N 550 V <0.043 Ω 68 A • 100% avalanche tested ■ Low input capacitance and gate charge