TC511000B Search Results

MO-23

Abstract: THM362040ASG-60 MO23 CDQ2 THM362040ASG
Contextual Info: TOSHIBA 'IHM36204QAS/ASG-60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362040A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 18 TC514400ASJ devices and 8 TC511000BFT devices on the printed circuit board. This module can be used as

tc511000aj

Contextual Info: TOSHIBA THM362020AS/ASG -60/70/S0 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362020A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 16 TC514400ASJ devices and 8 TC511000BJ/AJ devices on the printed circuit board. This module can be used as

Contextual Info: PRELIMINARY D ESC R IPTIO N The TC511000BPI/BJL/BZL/BFTL is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BPL/BJL/BZL/BFTL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the

Contextual Info: TOSHIBA THM362040AS/ASG-60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The TH M 362040A is a 2,097,152 word by 36 bit dynam ic RA M m odule w hich is assem bled with 18 TC514400ASJ devices and 8 TC511000BFT devices on the printed circuit board. This m odule can be used as

tc511000

Contextual Info: 1,048,576 W O R D S X 9 BIT DYNAM IC RAM PRELIMINARY MODULE DESCRIPTION The TH M 91000BS/BSG /BL is a 1,048,576 words by 9 bits dynamic RAM module which assembled 9 pcs of TC511000BJ on the printed circuit board. The THM91000BS / BSG / BL is optimized for

tc511000b

Contextual Info: 1,048,576 W O R D S x 8 BIT D Y N A M IC RAM M O DULE DESCRIPTION The TH M 61000B S/B SG /B L is a 1,048,576 words by 8 bits dynamic RAM module which assembled 8 pcs of TC511000BJ on the printed circuit board. The THM81000BS / BSG 1 BL is optimized for application to the systems which are required high density and large capacity such as m ain memory of

Contextual Info: 1 ,048,576 W O R D x PRELIMINARY 1 BIT D Y N A M IC R A M DESCRIPTION 511000 The TC BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

tc511000

Abstract: TS0P24-P-Q616 tc511000bp tc511000b 511000 dram
Contextual Info: 1,048,576 W O R D x PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC511000BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: TOSHIBA THM362020AS/ASG -60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362020A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 16 TC514400ASJ devices and 8 TC511000BJ/AJ devices on the printed circuit board. This module can be used as

MN12261

Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Contextual Info: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating

tc511000aj

Abstract: ATR80 1048576x4 TC511664 tc511665 TC511664BJl TC511000AJ/AZ-70
Contextual Info: MOS Memory CMOS Dynamic RAM Capacity Max. Access Time ns Min. Cyde Power *AA Time (ns) Supply (V) *CAC Type No. ‘ RAC Max. Power Dtesipa!ion(mW) Active S ta n d by TC511000AJ/AZ-70 70 20 35 130 440 TC511000AJ/AZ-80 80 20 40 150 358 TC511000AJ/AZ-10 100

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

XCR-T

Contextual Info: nccroiD Timi D ESCRIPTIO N PRELIMINARY The T C 51 1 0 0 0 B P L /B JL /B Z L /B F T L is the new generation dynamic RAM organized 1 ,0 4 8 ,5 7 6 words by 1 bit. The T C 5 1 1 0 0 0 B P L /B JL /B Z L /B F T L utilizes TOSHIBA'S CMOS Silicon gate process technology as

TC511000P-10

Abstract: tc511000 Micron TC511001AP MT4C1026-10
Contextual Info: -1M CMOS X Si £ tt « i& m m CO D y n a m i c y ^ 'f TRAC isax ns TRCY rain (ns) TCAD min (ns) TAH nin (ns) TP rain (ns) R A M (1 0 4 8 5 7 6 x 1 ) ft tt TWCY ain (ns) TDH min (ns) TRWC rain (ns) V D D or V C C (V) 18 P I N m % I DD max (mA) A I DD STANDBY