TB414 Search Results

Contextual Info: SAM SUN G E L E C T R O N I C S INC LM393 ì> 42E m ?Tb4142 ODG^Bfi? 7 LINEAR INTEGRATED CIRCUIT DUAL DIFFERENTIAL COMPARATOR The LM393 consists of two independent voltage comparator is design­ ed to operate from a single power supply over a wide voltage range.

Contextual Info: S A M S U N G E L E C T R O N I C S INC b7 E D • 7 Tb4142 KMM5361000B/BG 0015150 SGÖ H i S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5361000B is a 1M bits x 36 Dynam­ ic RAM high density memory module. The Samsung

Contextual Info: SAN SUN G E L E C T R O N I C S INC b7E D 7 Tb4145 KMM532256CV/CVG 0 0 1 S034 TSQ • SMGK DRAM MODULES 256Kx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532256CV is a 256K b itsx3 2 Dynamic RAM high density memory module. The Samsung

EL7513

Abstract: BAT54HT1 TB414
Contextual Info: EL7513 Technical Brief November 25, 2003 White LED Step-Up Regulator TB414.1 The brightness of the LEDs is adjusted through a voltage level on the CNTL pin. When the level falls below 0.1V, the chip goes into shut-down mode and consumes less than 1µA of current.

A08 monolithic amplifier

Abstract: RAM-8 Mini-Circuits Monolithic Amplifier A08 monolithic RF AMPLIFIER RF AMPLIFIER marking A08 ram8
Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 3.0 dB typ. • Excellent repeatability • Aqueous washable RAM-8+ CASE STYLE: AF190 PRICE: $4.95 ea. QTY. 30 Typical Applications

IRFS150

Abstract: 250M IRFS151 diode deg avalanche zo 150 60
Contextual Info: N-CHANNEL POWER MOSFETS IRFS150/151 FEATURES • Low er Rds<on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

marking A04

Abstract: A04 monolithic amplifier AF190 ram-4 RF AMPLIFIER marking A04 MMIC Amplifier A04
Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190

SSP4N60

Abstract: 250M SSP4N55 diode lo2a 120Vn
Contextual Info: N-CHANNEL POWER MOSFETS SSP4N60/55 FEATURES • • • • • • • Lower R d s <o n Im proved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

TB-414-1

Abstract: TCCH-80
Contextual Info: Evaluation Board and Circuit ] Vcc GND RF IN RF OUT TB-414 -1 + R1 COMPONENT A1 C1 NOTE 4 C2 (NOTE 4) C3 (bypass) R1 R2 CHK R2 VALUE RAM-1 (+ ) 2400 pF 2400 pF 0.1 uF 412 Ohms, 0.75W 0 Ohm, 0.25W Mini-Circuits TC CH -80+ Schematic Diagram NOTE: 1. Vcc voltage:

AF190

Abstract: R04350B
Contextual Info: THIRD ANGLE PROJECTION 4 REV ECN No. OR A M 108436 M 108585 REVISIONS DESCRIPTION SUGGESTED MOUNTING CONFIGURATION AF190 CASE STYLE. DR AU TH DATE 11/14/06 NEW RELEASE UPDATED DRAWING PER T B - 4 1 4 + 11/24/06 ” cb” PW PW IG MM FOR PIN CONNECTION 1. TRACE WIDTH IS SHOWN FOR ROGERS R 0 4 3 5 0 B WITH DIELECTRIC

rbbb

Contextual Info: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: The information in this data sheet can change upon complete cajaracterization and evaluation Of this new product. I f n A f\A Q A Iv U /W J ^ rO ^ » 110 M H z C M O S T r u e - C o lo r R A M D A C KDA0484 FEATURES ♦ 110,85MHz Pixel Clock ♦ 8 :1 , 4:1, 2:1,1:1 MUX Modes

Contextual Info: SAMSUNG ELECTRONICS INC b4E 3 • 7 ^ 4 1 4 2 DDIBTTB TSG PRELIMINARY KM424C257 SMGK CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K x 4 b its RAM port 512 x 4 b its SAM port • Performance The Samsung KM 424C 257 is a CMOS 2 5 6 K X 4 bit Dual

KM418C256/L/SL-7

Contextual Info: SAMSUNG ELECTRONICS INC bME D KM418C256/L/SL • 7 T b 4 m 2 GGlBMTb 12=5 « S U G K CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM418C256/L/SL is a C MOS high speed 262,144 b it x 18 D ynam ic Random A ccess M em ory. Its

BC307

Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9

marking A06 amplifier

Abstract: 4A063
Contextual Info: Surface Mount Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 2.8 dB typ. • Excellent repeatability • Aqueous washable RAM-6+ CASE STYLE: AF190-1

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629

A08 monolithic amplifier

Abstract: ,A08 monolithic amplifier A08 marking RF AMPLIFIER marking A08
Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 3.0 dB typ. • Excellent repeatability • Aqueous washable RAM-8+ CASE STYLE: AF190 PRICE: $4.60 ea. QTY. 30 Typical Applications

RF AMPLIFIER marking A01

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190

3TB43

Abstract: CP2101 relay tb2 160 TB4-13
Contextual Info: DEVELOPMENT KIT Info Click here IM2200 • Interface Module for the DM2200 Series Transceiver Modules • Provides choice of USB, RS232 or UART Serial Interfaces • Provides choice of USB, Regulated or Unregulated DC Power Sources • Supports Analog and Digital Inputs plus Digital and Relay Outputs

TB-414-2

Abstract: TCCH-80 ram schematic diagram Tb4142
Contextual Info: Evaluation Board and Circuit ] Vcc GND RF IN RF OUT TB-414 -2 + R1 COMPONENT A1 C1 NOTE 4 C2 (NOTE 4) C3 (bypass) R1 R2 CHK R2 VALUE RAM—2(+) 2400 pF 2400 pF 0.1 uF 280 Ohms, 0.75W 0 Ohm, 0.25W Mini-Circuits TC CH -80+ Schematic Diagram NOTE: 1. Vcc voltage:

MPSA10

Abstract: MPSA10 equivalent transistor
Contextual Info: SAMSUNG SEMICONDUCTOR I NC MPSA10 l4 E | 7 «,fcm Ma 0007341, 5 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: Veto= 40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

IC 74142

Contextual Info: -5J SAMSUNG K M 6 8 B 1001 \0 ELECTRONICS 131,072 WORD X 8 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES The KM68B1001 is a 1,048,576-bit high­ speed static random access memory organized as 131,072 words by 8 bit. The device is fabricated using Samsung's advanced BiCMOS process and designed or

TS 4142

Abstract: ro1f
Contextual Info: Advance Information KM29V64001 TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M+128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase