KM68B1001 Search Results

KM68B1001 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IC 74142 Contextual Info: -5J SAMSUNG K M 6 8 B 1001 \0 ELECTRONICS 131,072 WORD X 8 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES The KM68B1001 is a 1,048,576-bit high speed static random access memory organized as 131,072 words by 8 bit. The device is fabricated using Samsung's advanced BiCMOS process and designed or	OCR Scan	km68b1001 576-bit 400mil 32-pin +5km68b1001p/j-12 180ma km68b1001p/j-15 160ma ic 74142	PDF
68B10 Contextual Info: SAMSUNG K M 6 8 B 1001 ELECTRONICS 131,072 WORD X 8 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES The KM68B1001 is a 1,048,576-bit high • Fast Access Tim e 12,15 ns max. • Low Power Dissipation Standby (TTL) : 60m A(m ax.) (CMOS): 20m A(m ax.) Operating KM 68B1001P/J-12 : 180mA (max.)	OCR Scan	km68b1001 576-bit 68b1001p/j-12 180ma +568b1001p/j-15 160ma 68b10 32-pin 68b1001j	PDF
41C464 Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page	OCR Scan	41c256 41c257 41c258 41c464 +1441c466 41c1000 41c1002 44c256 44c258 41c4000 tc55b8128 424170 nec cy70199 44c1000 iot7164 hn62308bp hn62404p tc5116100	PDF
TC55B8128 Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6	OCR Scan	tc511001 tc514101 514170b 514280b +16tc5316200p km2x16100 km23c16000g km23c16100g km23c16000fp km23c16100fp tc55b8128 km23c4000ag tc534000af hn62308bp tc551632 hitachi cross mb83 68512u hitachi 64k dram tc55b4256	PDF
AG10 Abstract: km416c256 1m maskrom KM68B1002-10 Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10	OCR Scan	km41c4000a-7 km41c4000a-8 km41c4000a-10 km41c4000al-7 +10km41c4000al-8 km41c4000al-10 km41c4000asl-7 km41c4000asl-8 km41c4000asl-10 km41c4001a-7 ag10 km416c256 1m maskrom km68b1002-10	PDF