TAC L2 Search Results

STR 6757 OF equivalent

Abstract: Johnson motor 2 607 022 013 Barber-Colman CP AT-1163 ms-517
Contextual Info: Electric/Electronic Products Catalog Make the most of your energy General Information TAC TAC is a Schneider Electric Company with a long tradition of global leadership in building controls technology. We offer the most extensive line of controls and components available to today's market, including: valve bodies, valve assemblies, actuation devices and sensors, as well as interfaces, and automated systems that link these products and other building systems

Contextual Info: 7 HOUS [ NGi LCP, UL 9 4 V - 0 R A T E D , RECOMMENDED PC BOARD MOUNTING D I M E N S I O N S COMPONENT S I D E BL ACIC. CO N TAC TSi PHOSPHOR B R O N ZE. R E T E N T IO N L E B . B R A S S . C O N TAC TS. SCALE 4 : 1 Ü .7 6 Jim GOLD FOR A LEN G TH T .2 0

SY10L474-7

Abstract: SY10L474 sy100l474 10L474
Contextual Info: * SY10L474-5/7 SY100L474-5/7 SY101 L474-5/7 LOW-POWER 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Address access time, tAA: 5/7ns max. ■ Chip select access time, tAC: 3ns max. ■ Write pulse width, tww: 5ns min. ■ Write recovery times under 5ns

Contextual Info: SY100484-8 SY101484-8 SY100484-10 SY101484-10 «0« SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Address access time, U a : 8/1 0ns max. ■ Chip select access time, tAc: 4/5ns max. ■ Write pulse width, tww: 10ns min. The Synergy S Y 100/101484 are 16384-bit Random

Contextual Info: * SY10484-3.5/4/5/6 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3.5/4/5/6ns max. Chip select access time, tAC: 3ns max. Edge rate tr/tf : 500ps (typ.) Eliminates write recovery glitch found on

Contextual Info: * SY10L494-10 SY100L494-10 SY101L494-10 LOW-POWER 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 10ns max. Chip s e le c t a c c e s s tim e , tAc: 3ns m ax. Write recovery times under 5ns

Contextual Info: « SY100480-8 SY101480-8 SY100480-10 SY101480-10 H r p i rj a lt/l ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 8/10ns max. Chip select access time, tAc: 4/5ns max. Choice of two edge rates: 800 or I500ps typ.

Contextual Info: * 16K x 1 ECL RAM SYNERGY SEMICONDUCTOR FEATURES SY10480-6 DESCRIPTION • Address access time, tAA: 6ns max. ■ Chip select access time, tAc: 3ns max. The Synergy SY10480 is a 16384-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10480 is organized as 16384words-by-1-bit, meets the standard 10K family signal and

Contextual Info: 2211 SERIES □Limn PIN HEADER 1.27mmX2.54mm 0.050"X0.100" Material: H ousing: High te m p e ra tu re h o u sin g w ith sta n d s IR and VPR so ld e rin g m e th o d s. C o n tac ts: B rass P latin g : Gold plated: 5 over nickel. Tin plated: 1 5 0 over 7

IC 1608B

Abstract: 1608B sd1616a IC 1628b
Contextual Info: SUMICON 1600 SERIES RECTANGULAR CONNECTORS T he S U M IC O N 1600 series are m u lti-c o n tac t c o n n e c ­ are C case, CA case, C B A case, ST sto p per, ST A s t o f > \ tors d esig n e d by H irose. per, and S T B sto p per. 8, 12, 16, 20, 24, 28, 34, 45

Contextual Info: SEMICONDUCTOR F TO V C O N VERTER LOW COST M ULTI-FUNCTION ICs D E S C R IP T IO N The CS-2907/2917 S e rie s is d esig n ed for use in frequency-tovo ltag e c o n ve rsio n syste m s and is e s p e c ia lly su ita b le for tac h o m eter and m otor-speed-control a p p licatio n s. T h e 2907

EM44BM1684LBB

Contextual Info: EM44BM1684LBB Revision History Revision 0.1 Jun. 2010 -First release. Revision 0.2 (Apr. 2014) -Add speed 1066MHz. Apr. 2014 1/28 www.eorex.com EM44BM1684LBB 512Mb (8Mx4Bank×16) Double DATA RATE 2 SDRAM Features Description • JEDEC Standard VDD/VDDQ = 1.8V±0.1V.

Contextual Info: EM44BM1684LBB Revision History Revision 0.1 Jun. 2010 -First release. Jun. 2010 1/28 www.eorex.com EM44BM1684LBB 512Mb (8Mx4Bank×16) Double DATA RATE 2 SDRAM Features Description • JEDEC Standard VDD/VDDQ = 1.8V 0.1V. • All inputs and outputs are compatible with SSTL_18

Contextual Info: W9864G6KB 1M  4 BANKS  16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

Contextual Info: iPEM 4.8 Gb SDRAM-DDR2 AS4DDR264M72PBG 64Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

Contextual Info: iPEM 4.2 Gb SDRAM-DDR2 AS4DDR264M64PBG1 64Mx64 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • Proprietary Enchanced Die Stacked iPEM

W9816G6CB

Abstract: W9816G6CB-6 W9816G6CB-7 VFBGA60
Contextual Info: W9816G6CB 512K x 2 BANKS × 16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

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Abstract: 245473
Contextual Info: Itanium Processor Microarchitecture Reference for Software Optimization August 2000 Doucment Number: 245473-002 THIS DOCUMENT IS PROVIDED “AS IS” WITH NO WARRANTIES WHATSOEVER, INCLUDING ANY WARRANTY OF MERCHANTABILITY, FITNESS FOR ANY PARTICULAR PURPOSE, OR ANY WARRANTY OTHERWISE ARISING OUT OF ANY PROPOSAL, SPECIFICATION OR

EM44CM0884LBA

Contextual Info: EM44CM0884LBA Revision History Revision 0.1 Dec. 2014 -First release. Dec. 2014 1/28 www.eorex.com EM44CM0884LBA 512Mb (16Mx4Bank×8) Double DATA RATE 2 SDRAM Features Description • JEDEC Standard VDD/VDDQ = 1.8V±0.1V. • All inputs and outputs are compatible with SSTL_18

Contextual Info: 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 EM44DM0888LBA Revision History Revision 0.1 Feb. 2011 -First release. Revision 0.2 (Jan.2013) -Add speed 1066. Feb. 2012 1/29 www.eorex.com 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 EM44DM0888LBA 1Gb (16Mx8Bank×8) Double DATA RATE 2 SDRAM

Contextual Info: iPEM PRELIMINARY 2.4 Gb SDRAM-DDR2 AS4DDR232M72APBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

Contextual Info: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

H11M1

Contextual Info: i PEM 4.8 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR264M72PBG1 64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES „ „ „ BENEFITS „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp

Contextual Info: i PEM 4.8 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR264M72PBG1 64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400