TAC L2 Search Results

STR 6757 OF equivalent

Abstract: Johnson motor 2 607 022 013 Barber-Colman CP AT-1163 ms-517
Contextual Info: Electric/Electronic Products Catalog Make the most of your energy General Information TAC TAC is a Schneider Electric Company with a long tradition of global leadership in building controls technology. We offer the most extensive line of controls and components available to today's market, including: valve bodies, valve assemblies, actuation devices and sensors, as well as interfaces, and automated systems that link these products and other building systems

Contextual Info: 7 HOUS [ NGi LCP, UL 9 4 V - 0 R A T E D , RECOMMENDED PC BOARD MOUNTING D I M E N S I O N S COMPONENT S I D E BL ACIC. CO N TAC TSi PHOSPHOR B R O N ZE. R E T E N T IO N L E B . B R A S S . C O N TAC TS. SCALE 4 : 1 Ü .7 6 Jim GOLD FOR A LEN G TH T .2 0

Contextual Info: 17 S D - 5 2 7 4 5 "* W M i (LEN G TH TO C O N TAC T P O IN T) H K ànE C ± B) . C O N TAC T PO IN T (U P P E R S ID E ) S E C T .J- J ( 5. 7 ) (WHEN A C TU A TO R I S OPEND) 4 .3 CKT.NO. I MARK DRAWING 1 FITTIN G NAIL ; (±B) 7 ?5 Ln l - 9 P P S , U L 9 4 V - 0

SY10L474-7

Abstract: SY10L474 sy100l474 10L474
Contextual Info: * SY10L474-5/7 SY100L474-5/7 SY101 L474-5/7 LOW-POWER 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Address access time, tAA: 5/7ns max. ■ Chip select access time, tAC: 3ns max. ■ Write pulse width, tww: 5ns min. ■ Write recovery times under 5ns

Contextual Info: SY100484-8 SY101484-8 SY100484-10 SY101484-10 «0« SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Address access time, U a : 8/1 0ns max. ■ Chip select access time, tAc: 4/5ns max. ■ Write pulse width, tww: 10ns min. The Synergy S Y 100/101484 are 16384-bit Random

Contextual Info: * SY10484-3.5/4/5/6 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3.5/4/5/6ns max. Chip select access time, tAC: 3ns max. Edge rate tr/tf : 500ps (typ.) Eliminates write recovery glitch found on

Contextual Info: * SY10L494-10 SY100L494-10 SY101L494-10 LOW-POWER 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 10ns max. Chip s e le c t a c c e s s tim e , tAc: 3ns m ax. Write recovery times under 5ns

Contextual Info: « SY100480-8 SY101480-8 SY100480-10 SY101480-10 H r p i rj a lt/l ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 8/10ns max. Chip select access time, tAc: 4/5ns max. Choice of two edge rates: 800 or I500ps typ.

Contextual Info: * 16K x 1 ECL RAM SYNERGY SEMICONDUCTOR FEATURES SY10480-6 DESCRIPTION • Address access time, tAA: 6ns max. ■ Chip select access time, tAc: 3ns max. The Synergy SY10480 is a 16384-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10480 is organized as 16384words-by-1-bit, meets the standard 10K family signal and

Contextual Info: 2211 SERIES □Limn PIN HEADER 1.27mmX2.54mm 0.050"X0.100" Material: H ousing: High te m p e ra tu re h o u sin g w ith sta n d s IR and VPR so ld e rin g m e th o d s. C o n tac ts: B rass P latin g : Gold plated: 5 over nickel. Tin plated: 1 5 0 over 7

IC 1608B

Abstract: 1608B sd1616a IC 1628b
Contextual Info: SUMICON 1600 SERIES RECTANGULAR CONNECTORS T he S U M IC O N 1600 series are m u lti-c o n tac t c o n n e c ­ are C case, CA case, C B A case, ST sto p per, ST A s t o f > \ tors d esig n e d by H irose. per, and S T B sto p per. 8, 12, 16, 20, 24, 28, 34, 45

Contextual Info: SEMICONDUCTOR F TO V C O N VERTER LOW COST M ULTI-FUNCTION ICs D E S C R IP T IO N The CS-2907/2917 S e rie s is d esig n ed for use in frequency-tovo ltag e c o n ve rsio n syste m s and is e s p e c ia lly su ita b le for tac h o m eter and m otor-speed-control a p p licatio n s. T h e 2907

CL211-0279-0

Abstract: AWG20 AWG28 CDA-15P CDC-37P 060080 CDA-15PF
Contextual Info: CD CRIMP TYPE CONNECTOR General r T h e m o d el C D co n necto rs are SM S e rie s s u b -m in ia ­ A vailab le in 9, 15, 25 and 37 way. ture rectang ular m u lti-c o n tac t crim ping connectors. for A W G 2 8 through A W G 2 0 . C D C rim p T yp e C o n n ecto rs are C rim p T yp e D S u b ­

EM44BM1684LBB

Contextual Info: EM44BM1684LBB Revision History Revision 0.1 Jun. 2010 -First release. Revision 0.2 (Apr. 2014) -Add speed 1066MHz. Apr. 2014 1/28 www.eorex.com EM44BM1684LBB 512Mb (8Mx4Bank×16) Double DATA RATE 2 SDRAM Features Description • JEDEC Standard VDD/VDDQ = 1.8V±0.1V.

W9864G2DB-7

Contextual Info: W9864G2DB 512K x 4 BANKS × 32 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

Contextual Info: W986416EB/W9864G6EB Data Sheet 1M x 4 BANKS × 16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

Contextual Info: W9864G6GB 1M x 4 BANKS × 16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

Contextual Info: EM44BM1684LBB Revision History Revision 0.1 Jun. 2010 -First release. Jun. 2010 1/28 www.eorex.com EM44BM1684LBB 512Mb (8Mx4Bank×16) Double DATA RATE 2 SDRAM Features Description • JEDEC Standard VDD/VDDQ = 1.8V 0.1V. • All inputs and outputs are compatible with SSTL_18

8X13

Contextual Info: W9864G2IB 512K x 4 BANKS × 32BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES. 3

Contextual Info: W9864G6KB 1M  4 BANKS  16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

Contextual Info: W9816G6JB 512K  2 BANKS  16 BITS SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. GENERAL DESCRIPTION . 3 FEATURES . 3

W9816G6BB

Abstract: W9816G6BB-7
Contextual Info: W9816G6BB 512K x 2 BANKS × 16 BITS SDRAM Table of Contens1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

Contextual Info: W9816G6CB 512K x 2 BANKS × 16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

w9812g2ib-6i

Abstract: W9812G2IB
Contextual Info: W9812G2IB 1M x 4 BANKS × 32BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES. 3