SY10484 Search Results

Contextual Info: SY10484-4/5/6 SY100484-4/5/6 SY101484-4/5/6 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 4/5/6ns max. ■ Chip select access time, tA c: 3ns max. ■ Edge rate, tr/tf: 500ps typ. ■ Write recovery times under 5ns

MBT- 100K

Contextual Info: SYNERGY SEMI CON D U CT OR *SYNERGY S7E ]> • T0013A1 0000033 SE2 I SY10484-3.5/4/5/6 4K x 4 ECL RAM SY100484-3.5/4/5/6 SY101484-3.5/4/5/6 SEMICONDUCTOR -T -H é -Z 3 '0 8 ■ FEATURES Address access tim e, tAA: 3.5/4/5/6ns max. Chip select access tim e, tAc: 3ns max.

SY101484-4

Abstract: SY10484-5CCF SY101484-6FCF S2811
Contextual Info: * SYNERGY SY10484-4/5/6 SY100484-4/5/6 SY101484-4/5/6 4K x 4 ECL RAM S E M IC O N D U C TO R DESCRIPTION FEATURES The Synergy SY10/100/101484 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter Coupled Logic (ECL) circuitry. The devices are organized

Contextual Info: * SY10484-3.5/4/5/6 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3.5/4/5/6ns max. Chip select access time, tAC: 3ns max. Edge rate tr/tf : 500ps (typ.) Eliminates write recovery glitch found on

Contextual Info: * S Y 1 0 4 8 4 -8 4K x 4 ECL RAM SYNERGY S Y 1 0 4 8 4 -1 0 SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 8/10ns max. ■ Chip select access time, tAc: 4/5ns max. ■ Write pulse width, tww: 10ns min. ■ Choice of two edge rates tr/tf : 500 or 1500ps (typ.)