32BITS Search Results

45VM32160D

Contextual Info: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

ba1s

Contextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data

SM32200K

Abstract: IS42SM32200K
Contextual Info: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

46LR32640A

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: N32D3225LPAW 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These N32D3225LPAW are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: N128D3218LPAF2 Advance Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These N128D3218LPAF2 are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: IS42RM32400F Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42RM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are

Contextual Info: HY5W2A2 L/S F / HY57W2A3220(L/S)T HY5W22F / HY57W283220T 4Banks x 1M x 32bits Synchronous DRAM Revision History Revision No. History 0.3 Changed TA, PKG Drawing, Output Load Circuit 0.4 Changed Cin Value. 0.6 1. Added Operation Code in Mode Register 2. Changed Burst Stop in Full Page

Contextual Info: W9864G2JH 512K  4 BANKS  32BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

W9864G2GH-6I

Abstract: W9864G2GH W9864G2GH-5
Contextual Info: W9864G2GH 512K X 4 BANKS X 32BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

ESA2UN3282B-60JS-S

Abstract: EDO RAM drawing
Contextual Info: July 1997 Revision 1.0 data sheet ESA2UN3282B-60JS-S 8MByte 2M x 32 CMOS EDO DRAM Module General Description The ESA2UN3282B-60JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA2UN3282B supports 2K refresh.

20549

Contextual Info: July 1997 Revision 1.0 data sheet ESA4UN3242B- 50/60 (J/T)(G/S)-S 16MByte (4M x 32) CMOS EDO DRAM Module General Description The ESA4UN3242B-(50/60)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out)16-megabyte dynamic RAM module organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA4UN3242B supports

JSs 57

Contextual Info: February 1997 Revision 1.0 data sheet ESA2UN3282 A -(60/70)JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3282(A)-(60/70)JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA2UN3282(A) supports 2K refresh.

1Mx4 dram simm

Abstract: 1Mx4 EDO RAM ESA2UN3241A-60JS-S
Contextual Info: July 1997 Revision 1.0 data sheet ESA2UN3241A- 60/70 JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3241A-(60/70)JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.

n343532

Abstract: N343532LQF-8N n343532lqf8 DS-N343532-12 N343532LTQ8 N343532LTQ-8 N343532LTQ-10 N343532LQF n343532lqf8n N343532LQF-8
Contextual Info: CMOS NKK Low Voltage SRAM Fast Synchronous with Burst Counter 1M-BIT 32K X 32 N343532L -K. -N • Features • CMOS SRAM organized as 32,768 X 32bits • Single+3.3V Power Supply • Fast Clock Access time : 8ns/66MHz, l0ns/60M Hz, 12ns/50MHz • Synchronous operation

46LR32640A

Abstract: Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A
Contextual Info: IS43/46LR32640A Advanced Information 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

SM32800E

Abstract: IS42RM32800E
Contextual Info: IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

Contextual Info: N128D3233LPAF2 Advance Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These N128D3233LPAF2 are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: N32D3225LPAF2 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These N32D3225LPAF2 are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

QUANTA power sequence

Abstract: VIA VT6212L VT6212 quanta VT6212L P0V75 rt8101l quanta computer foxconn CMM211T-900M-S
Contextual Info: 1 2 PCIe-1 SM BUS A 3 4 5 6 CPPE# POWER IC CPUSB# RICOH/ R5535V PCI-e 1 SM BUS PCI-e 2 PAD , HOLE NEW CARD CONN. PG 20 A PG 11 USB HOST INTEL 8 3V/ 1.5V USB 0 PCIe-2 7 VIA VT6212L-1 PCI BUS/ 33MHz/ 32bits USB 2 INTA,B,C REQ0 GNT0 AD18 PG 12 PCI-e to PCI Bridge

DTMF mobile

Abstract: V30HL CISC OP BASEBAND 80MHZ Reed-Solomon CODEC G711 M80186 V20HL dsp oak pine CIS scanner
Contextual Info: Intellectual Property ROHM Intellectual Property CPU -32bits R IS -16bits(C C ARM7TDMI *1 IS -16bits(C C)V30HL/V20HL *2 IS -8bits(CIS C)M80186 C -4bits(CIS )M8052 C) DRAM(e -Embeded RAM) *3 DRAM -Dual Po rt -FIFO Non-vola -ISDN Analog tile mem -FLASH -EEPRO

HY57V643220D

Abstract: hy57v643220dt HY57V643220
Contextual Info: Preliminary HY57V643220D L/S T(P) Series 4Banks x 512K x 32bits Synchronous DRAM Document Title 4Bank x 512K x 32bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft May. 2004 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

HY57V643220D

Contextual Info: Preliminary HY57V643220D L/S T(P)-xI Series 4Banks x 512K x 32bits Synchronous DRAM Document Title 4Bank x 512K x 32bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft June. 2004 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: 256Mb Synchronous DRAM based on 2M x 4Bank x32 I/O Document Title 4Bank x 2M x 32bits 4Bank x2M x16 *2 Stack Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jul. 2005 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for