TA25C Search Results

transistor C3467

Abstract: A1370 transistor C3467 A1728 c3467 transistor SFCPA B1123 transistor A1370
Contextual Info: SAHYO NEW PRODUCT PCP4/5 series FP series High performance composite type devices suitable for surface mounting which make the sets smaller andlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,

lt 715 1111

Abstract: EPSP hj 4094 DB10 TMC1241 TMC12441 TMC12441B6B
Contextual Info: TMC12441 Self-Calibrating 12-Bit Plus Sign, 13/*s, /<P-Compatible Sampling A/D Converter Tested and Specified for DSP Applications TRW 's TMC12441 is a CMOS successive approximation analog-to-digital converter with 13-bit resolution. Physically identical to the TMC1241, the TMC12441 is

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF0904A L, S BAND POWER GaAs FET DESCRIPTION The M G F 0 9 0 4 A , GaAs OUTLINE DRAWING F E T w ith an N-channel schottky U n it: m illim e te rs inches gate, is designed fo r use in U H F band am plifiers. FEATURES

I251 diode

Abstract: DLF60 Z311 I251 DE3L4 HE87 HJC.1 de5s6 DE3L
Contextual Info: #jf+j;B OUTLINE DIMENSIONS n Case 1 1Z Type 4 + SlZAO P 3 6 0 0 V l.lA Standard soldering pad H z$!& R A T I N G S @jkj~~~$$ Absolute 1 ‘ , r’f. , /,h t $ Storage Temperature :; :; ,‘, 1; : ;,a ‘11 Operating Junction Temperature ir ,I [I(! ;I” &ii’ f:

Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial) - 20/25/35/45/55ns (Military) Data Retention with 2.0V Supply, 10 nA Typical

TXAL 228 B

Abstract: 2SAB12 K1589 2sc2554 k2499 P015M 2SD 1694 2482S K2134 diode zener nt 1243
Contextual Info: QUICK REFERENCE GUIDE 2 ELECTRICAL SPECIFICATION LIST 2 PIN ULTRA SUPER MINI MOLD • Noise Clipping Diode fMNCD[ JC Series) M axim am R atings5 Electrical Characteristics {T a = 2 5 ‘CJ O a = 2 5 ‘C ì Type No. Application V b r (V) P tm W ) M IN . S M A X

Contextual Info: HI6H SPEED SWITCHIN6 OPERATIONAL AMPLIFER NJM2121 The NJM2121 is a dual operational aplifier o f 2-INPUT and 1-OUTPUT with analog switch. The NJM2121 can be used as analog switch under the condition o f G v = 0 dB, as S w itch+A m p in order that each gain A or B can be adjusted independently.

Contextual Info: 2.5 GHz DIVIDE- B Y - 128/64 P RESC A LER FEATURES UPB588B UPB588G TEST CIRCUIT • HIGH FREQUENCY OPERATION TO 2.5 GHz Vcc • WIDE BAND OPERATION . SINGLE SUPPLY VOLTAGE: Vcc - 5 V ±10% AVAILABLE IN TAPE AND REEL G08 PACKAGE DESCRIPTION The UPB588 series of devices are silicon bipolar digital

Contextual Info: • Ì 6 Ì Ì # ^ : $ f è / Absolute Maximum Rating ILLUMINATED TACTILE SWITCH T . - f 'j / 'f - /S w itc h p o rtion 12V 2 0 m A L E D ® fi5L E D CO £ /LED portion Per LED chip)(Ta 25"C) E9 mmm Symbol Rating (mW) P: 65 fmA1 wmm Forward current

transistor npn c 6073

Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)

Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 = -56 dBc, IM3 = -64 dBc NE24620 IM2= -63 dBc, IM3 = -72 dBc @ Vo = 120 dBnV/75 a The NE246 is an NPN transistor designed for broadband

TLR4262

Abstract: tlr-4262 tlr2268 TLG2268 TLG4262 7 Segment Display GL IF5B
Contextual Info: DE J TCHVSSD DOlTEtil □ TOSHIBA {DISCRETE/OPTO} 99D 17261 9097250 TOSHIBA <DISCRETE/OPTO D-T-vA\-B'5 TLR2 I98, TLR4 I92, TLR2268, TLR4262 RED COLOR 4 DIGITS LE D DISPLAY • For Duplex Drive connection and available both polarity coaaoo anode or coanon

FMLM

Abstract: NJM2115 NJH2115V NJM2100 NJM2115D NJM2115L NJM2115M NJM2115 equivalent
Contextual Info: DUAL OPERATIONAL AMPLIFIER NJM2115 T h e N JM 2115 is a low supply V oltage ± 1 .0 V m in. an d low satu ratio n o u tp u t voltage (± 2 .0 V p-p a t supply voltage + 2 .5 V ) o p eratio n al am plifier. It is a p p licab le to H A N D Y T Y P E C D , R A D IO C A S S E T E C D , an d P O R T A B L E D A T , th a t

2SD987

Contextual Info: 2S D 98 7 2SD987 NPN=Mi£1ifc7fc'> U =i > h * ' - V > b >&M ? NPN Silicon T riple Diffused D arlington T ra n sisto r High V oltage Low Speed S w itching Industrial Use K H E t l J t * -f -y *• > Vm X « ffl 2 S D 9 8 7 ¡ i i f t i S S x -i ^ 3 K /P A C K A G E DIMENSIONS

2SA522

Abstract: 2SA522A 2SD110 2SK15-M 8D-18 3SK28-M MS0912 3SK28
Contextual Info: f l * £ *& Ta=25°C Vf;|)S e æ * M # m m « « M S0912 -60731 ßWiSJWW Nf t ^ 2 S K 1 5 -M 3 S K 2 8 -M N Tj p -3 0 V'GIDS 18 Vg2I)S -18 -= + T ?•«.»<>» I C SS ft MIN Vos (V ) Vus (V ) (m A ) -1 0 0 .8 V e is -1 5 \fc[G2 =- 0 3 .7 * M AX (V) M S0912 - 60730

2SA847

Abstract: 2SA847A knx-1 low noise preamplifier knx1
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA847A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA847A is a silicon PNP epitaxial type high voltage low frequency OUTLINE DRAWING *5 .6 M A X low noise transistor. It has low noise at super low frequency range,low pulse

CNC CIRCUIT DIAGRAM

Abstract: CNC ELECTRICAL DIAGRAM 3.56Mhz
Contextual Info: MITSUBISHI ICs VCR M52371FP COLOR PROCESSOR DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M52371FP Is a semiconductor Integrated circuit that integrates a color signal aperture Improvement and color noise canceller Into a slngle-chip. YLPF ADJ. [T OFFSET12 [2

Contextual Info: PHILIPS E C G INC 17E □ • bhS^TEÖ EC G 8 6 9 Dual Op Amp/Programmable Sem iconductors Features • User programmable gain bandwidth product, slew rate, input bias current, output stage biasing current and total device power dissipation • High gain bandwidth product

transistor 16305

Contextual Info: TOSHIBA OISCRETE/OPTO} 90D 16302 9097250 TOSHIBA DISCRETE/OPTO ¿Tostulic SEMICONDUCTOR D T-3J-3S MG15N2CK1 TECHNICAL DATA MG15N6EK1 W o cs ös m H o 2: 00 o f vf £\ > W vO 2 m cs a TOSHIBA CORPORATION OT I A 2 A - 309 - 2 - > L » î "TO TOSHIBA {DISCRETE/OPTO}

Contextual Info: Ordering number : ENN7029| Schottky Barrier Diode SBS806M S 4Ü V D 30V, 0.5A Rectifier Applications Package Dimensions • High frequency rectification switching regulators. unit ; mm converters, choppers . 1310 Features • Low forward voltage (IF-0.3A , V f max=0.4V)

Contextual Info: Sept. 1995 Edition 5.0b FUJITSU DATA S H E ET MB1502/MB1502H SERIAL INPUT PLL FREQUENCY SYNTHESIZER LOW POWER SERIAL INPUT PLL SYNTHESIZER WITH 1.1 GHz PRESCALER The Fujitsu MB1502/MB1502H, utilizing Bi-CMOS technology, are single chip serial input PLL synthesizers with pulse-swallow function. Each MB1502/MB1502H

TC40H032P

Abstract: tc40h032 4C51
Contextual Info: TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA T P I U 4 . n i i n i 9 P T U n U Ü f c r / F / I C 2M O S DIGITAL IN T EG RA T ED C IR C U IT S IL IC O N M O N O LIT H IC TC40H032 QUAD 2 - INPUT OR GATE PIN CONNECTION MAXIMUM RATING TRUTH TABLE CHARACTERISTIC

Contextual Info: BSiTOKO r e y io r a v ilP M I F D G O T M TK11950 VO LTAG E R E G U L A T O R W IT H R E S E T O U T P U T FEATURES APPLICATIONS • Very Low Dropout Voltage ■ Reset Output for Microprocessor ■ Battery Powered Systems ■ Very Low Quiescent Current No Load

2sa979

Contextual Info: =s^mm \-=rs=/n.i 2SA 979 •ij «* 2SA979U, '> y a ^ P N P i f ^ J r J ' r *?"!-— t"? * > a v p n p x — 7 =lT ^ h *»ea T >'s f f i » i i 3 £ if l| i s f f l t L T ä S t t f i - n ^ { j T " f „ : #tt® £ < * ^ > / : h 7 y ^ X ? 2 8 .1 m a x .