T55L Search Results

0C340

Abstract: 0L3492N-3 0CM243
Contextual Info: PRODUCT LINE QLD2203 -[ b OLD221Q PRODUCT UNE PHOTOSENSORS Silicon Planer Photodiodes | 0D44L Silicon NPN Epitaxial Planer Phototransistors T34 T35L T36 T55L Digital Output Photodetectors 0IP101 PRODUCT LINE PHOTOCOUPLERS j Photocouplers -[ 0C340 QC360 0C701

MCM63Z736

Abstract: CY7C1350 IDT71V546
Contextual Info: ^ C YPR ESS CY7C135° 128Kx36 Pipelined SRAM with NoBL Architecture Features Functional Description • Pin c o m p a tib le and fu n c tio n a lly eq u iv alen t to Z B T™ d e ­ vic es ID T 71V 546 , M T55L 128L 36P , and M C M 6 3Z 73 6 • S u p p o rts 14 3 -M H z bus o p e ra tio n s w ith zero w a it states

Photosensors

Abstract: T55L
Contextual Info: E2ITO1i-27-32 O K I electronic components T55L Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.

Contextual Info: O K I electronic components T55L_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.

LED Tr

Contextual Info: O K I electronic components T55L_ Silicon NPN Epitaxial Planar Phototransistor_ GENERAL DESCRIPTION The planar structure of the OKI T55L silicon phototransistor makes it a highly sensitive pho­ todetector. High reliability is ensured by a hermetically sealed TO-18 package.

PHOTO SENSORS

Abstract: diagram ta 306 ic 307 ex photo sensor 700 T55L photo resistance
Contextual Info: O K I electronic com ponents T55L_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.

CY7C1333

Contextual Info: CYPRESS _ CY7C1333 6~Kx3? Flow-Thru SRAM with NoBL Architecture Features Functional Description • Pin c o m p a tib le and fu n c tio n a lly eq u iv alen t to ZB T™ d evic e M T 55L 64 L 32F • S u p p o rts 6 6 -M H z bus o p e ra tio n s w ith zero w a it sta tes

11CTQ050

Abstract: 9CTQ040 11CTQ040 80SG045 11CTQ060 D0204AR 18TQ030 11CTQ030 30CTQ030 11CTQ090
Contextual Info: INTE RNA TIONAL R E C T I F I E R HE D | 4355455 □010020 fi Schottky Rectifiers T ~ ?>-£ o li 5.0 TO 30 AMPS !F AV TC VRWM VFH @ «FM (A) !RM @ Tj — 125°C & Rated VRWM Max. Tj (V) (A) 5QSQ10Q 60 80 90 100 5 5 5 5 92 92 92 92 0.52 0.52 0.52 0.52 13

Contextual Info: M m p n M 8 I 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, FLOW-THROUGH ZBT SRAM O lV ilU ^ IV IU T55L128L18F, T55L64L32F, T55L64L36F ZBT SRAM 3.3V Vdd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 10ns, 11ns and 12ns Single +3.3V +5% power supply

9436a

Contextual Info: ADVANCE T55L128L18P, T55L64L32P, T55L64L36P 2.25Mb ZBT SRAM 3 .3V V od, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization Fast cycle times: 7ns, 7.5ns, 8.5ns and 10ns

Contextual Info: ADVANCE 12 8 K x 18, 64K x 32/ 36 LV T T L , P I P E L I N E D Z B T S R A M MICRON I TECHNOLOGY, INC. T55L128L18P, T55L64L32P, T55L64L36P 2.25Mb ZBTSRAM +3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization

Photo Relays

Abstract: OCS37 OLD122 OCS32 OLD222 OC40 ocm220
Contextual Info: I PRODUCT LINE OLD122 LIGHT EMITTING DIODES OLD123 OLD124 OLD125 OLD127 OLD222 OLD222H OLD223 OLD224 OLD225 OLD232 OLD232-2 - OLD234 OLD2202 OLD22Û3 4 •P R O D U C T L IN E« PHOTO SENSORS Silicon PIN Photodiodes for Optical Communications " OD43L

Contextual Info: ADVANCE IU IIC R D N 2 5 6 K X 1 8 , 1 2 o K X 3 2 /3 6 I LVTTL, FLOW-THROUGH ZBT SRAM d R M h H - .U IV I U T55L256L18F, T55L128L32F, T55L128L36F ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • •

43ac

Abstract: e11011
Contextual Info: fax id: 1101 CY7C1352 PRELIMINARY 256K x18 Pipelined SRAM with NoBL Architecture Features • Low s ta n d b y p ow er • Pin c o m p a tib le and fu n c tio n a lly e q u iv a le n t to ZBT™ d e ­ vic es M C M 6 3Z 81 8 and M T 55L 25 6L 18 P • S u p p o rts 14 3 -M H z bus o p e ra tio n s w ith zero w a it states

Contextual Info: 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, FLOW-THROUGH ZBT SRAM MICRON I T O tW Q L ttffi INC. T55L128L18F, T55L64L32F, T55L64L36F 2Mb ZBT SRAM 3.3V V dd, 3.3V I/O FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization

Contextual Info: AD VA NC E 12 8 K x 18, 64K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM T55L128L18F, T55L64L32F, T55L64L36F 2.25Mb ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization

OLD122

Abstract: OC340 OD121 357 photo od43l T34L OC40 1r1h
Contextual Info: OUTLINE DIMENSIONS Unit : mm 1. Light-Emitting Diode OLD122 O L D 123 05.5*“ N - — •- H 04.6iat * ► Flat glass TO-18 stem 2-00.45 r I 2.54 1. Cathode 2. Anode (case) 108 -•OUTLINE DIMENSIONS# O LD 125 O LD 124 N 0 3 .0 * ° 20 — -►

82C59A-2

Abstract: 8085A-2 8259A-2 UM82C59A-2 55bB
Contextual Info: UNICORN MICROELECTRONICS 1 2 7 0 7 0 5 QOQOIM'Ì Q • 24 E D il I ff* 8 £3-33-13 UM82C59A-2 CM O S Programmable Interrupt Controller Features * 80C86/88 and 8080/85/86/88 compatible Pin compatible with NMOS 8259A-2 ■ Eight-Jevel priority controller Fully static design

Contextual Info: 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, PIPELINED ZBT SRAM MICRON I T O tW Q L ttffi INC. T55L128L18P, T55L64L32P, T55L64L36P 2Mb ZBT SRAM 3.3V V dd, 3.3V I/O FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization

MT55L128

Contextual Info: AD VA NC E 25 6 K x 18, 12 8 K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM MICRON U TECHNOLOGY, INC. T55L256L18F, T55L128L32F, T55L128L36F 4.5Mb ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization

Contextual Info: AD VA NC E 12 8 K x 18, 64K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM T55L128L18F, T55L64L32F, T55L64L36F 2.25Mb ZBTSRAM 3 .3 V V d d , Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization

D6510

Contextual Info: ADVANCE 25 6 K x 18, 12 8 K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM T55L256L18F, T55L128L32F, T55L128L36F 4.5Mb ZBTSRAM 3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization Fast cycle times: 10,11 and 12ns

Contextual Info: fax id: 1088 " C YPR BSS PRELIMINARY CY7C1333 64Kx32 Flow-Through SRAM with NoBL Architecture Features Functional Description • Pin c o m p a tib le and fu n c tio n a lly eq u iv alen t to ZB T™ d evice M T 55L 64 L 32F • S u p p o rts 6 6 -M H z bus o p e ra tio n s w ith zero w a it sta tes

CY7C1353

Abstract: CY7C1353-66AC MCM63Z819
Contextual Info: / CY7C1353 H Y P R F .S S ^ = 256Kx18 Flow-Through SRAM with NoBL Architecture Features Functional Description Pin c o m p a tib le and fu n c tio n a lly eq u iv alen t to ZB T™ d evic es M C M 6 3Z 81 9 and M T 55L 25 6L 18 F S u p p o rts 6 6 -M H z bus o p e ra tio n s w ith zero w a it sta tes