12BKX Search Results

Contextual Info: HY53VB10DA •HYUNDAI 12BKxB-blt C M O S FAST SR A M ADVANCED INFORMATIDN D E S C R IP T IO N The HY53VB1D0A is a high-speed 131,072 « B-bits C M O S static RAM Fabricated using Hyundai's high performance twin tub C M D S process technology. This high reliability process couplBd with high-speed circuit design techni­

Contextual Info: DENSE-PAC 4 Megabit 5V CMOS Flash EEPROM DPZ128X32VT/DPZ128X32VTP MICROSYSTEMS DESCRIPTION: The DPZ128X32VT/VTP is a 4 megabit 5 Volt only C M O S Flash E E P R O M (E le c tric a lly In-System Programmable and Erasable ROM memory) module. The module is built with four 128K x 8 FLASH memory

9436a

Contextual Info: ADVANCE MT55L128L18P, MT55L64L32P, MT55L64L36P 2.25Mb ZBT SRAM 3 .3V V od, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization Fast cycle times: 7ns, 7.5ns, 8.5ns and 10ns

Contextual Info: m EDI5C32128C u EtfCIROMC DC96N& N C 128Kx32 EEPROM 128Kx32CMOS EEPROM Multi-Chip Module Features 128Kx32 bit CMOS The EDI5C32128C is a high performance, four megabit Electrically Eraseable Programmable density EEPROM organized as 128Kx32 bits. The device

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

Contextual Info: ADVANCE M i n n r i M I 256K x 18/128K x 36 LVTTL, F L O W - T H R O U G H L A T E W R I T E S R A M Dual Clock and Single Clock FEATURES • • • • • • • • • • • • • • • • • Fast cycle tim es 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations

upd 1987

Contextual Info: t.fc MT28F200B1 FLASH MEMORY m artV o lt a g e FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word param eter blocks Two main memory blocks • SmartVoltage Technology (SVT): 3.3V +0.3V o r 5V ±10% Vcc

tba150

Contextual Info: 1M molate X 8 FLASH MEMORY MF81003RKX-12/15/20 Issue 1.3 : Novem ber 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Pin Definition 1,048,576 X 8 CMOS FLASH Memory Module Features Flash Eraseable Non-Volatile Memory Module Access Times of 150/200 ns

Contextual Info: W EDI8L32128V £ \ ElfCTROMC 0E9GN& MCI 128Kx32 SRAM 3.3 Vot 128KX32CMOSHigh Speed Static RAM ¡Features The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static Analog SHARC External Memory Solution density Static RAM. The device is available with access

EI24

Abstract: EI-24
Contextual Info: EDI8F24128C W 3 X ELECTRONIC. DESIGNS, INC 128KX24 SRAM Module !28Kx24Static RAM CMOS, High SpeedModrfe Features TTie EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is 128Kx24 bit CMOS Static constructed from threel 28Kx8 Static RAMs in SOJ packages

DPZ128X32VTP

Abstract: a13421
Contextual Info: DENSE-PAC MICROSYSTEMS 4 Megabit 5V CMOS Flash EEPROM DPZ128X32VT/DPZ128X32VTP D E SC R IPT IO N : The DPZ128X32VT/VTP is a 4 megabit 5 Volt only C M O S Fla sh E E P R O M (E le c t r ic a lly In-System Programmable and Erasable R O M memory) module. The module is built with four 128Kx 8 FLASH memory

HM6206

Abstract: 32Kx64
Contextual Info: SRAMs Cache Synchronous SRAMs P ackage P a rt N um b e r D e n i lt y O r g a n iz a tio n C y c le tim e / A c c e « » tim e (n e ) Max. Key F e a tu re LQ FP HM62C3232 1M 32K x32 9/10/12/15 Pipeline 100 HM62C3232FP-7 1M 32K x32 7 Pipeline 100 HM62C3232FP-8L

Contextual Info: mosaic 128Kx 32 SRAM Module semiconductor, inc. PUMA 2S4000-45/55 Issue 4.0 : March 1996 Description 4,194,304 bit CMOS High Speed Static RAM The PUMA 2S4000 is a 4Mbit high speed static RAM organised as 128K x 32 in a 66 pin PGA package with access times of 45ns or 55 ns.

DQ05

Contextual Info: E D I8F 32123C ^ E D I t\iCTÎ!OHC DESIGNS. NC.I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup • Access Times 70 and 85ns • Master Protected Module Enable • Ni-MH Battery Cell Backup

Contextual Info: ADVANCE M IC R O N B 128K IttMNOLÜGV INC X MT58LC128K32/36D8 32/36 S Y N C B U R S T SR A M 128KX 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • Fast access times: 4.5, 5, 6 and 7ns

KDL3

Contextual Info: tfc Integrated Devicelëchnotogy Inc PRELIMINARY IDT 7MB6036 128KX 16 SHARED PORT RAM FEATURES: DESCRIPTION: • Fully asynchronous operation from either port The Shared Port RAM provides two ports with separate control, address and Data I/O pins that permit Independent access for

ADA16

Abstract: A0-A16
Contextual Info: Honeywell Advance Information HC83241 128K X 32 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Automatically Detects and Corrects All Single and Double Bit Errors • Neutron Hardness through 1x10,4cnr2 • Full military temperature operation -55°C to 125°C

eprom rom 512k x 16 bits

Contextual Info: Section 1 >8-Pin Memory Cards — At a Glance P a g * Technology 1-3 1-17 1-19 Mask ROM Mask ROM EPROM 1-39 OTPROM 1-57 SRAM D«vlc« Ace«*a Tim« Emb«dd*d 1C* MB98A5090 250 ns MB834200A x 1 pc 96A5100 250 ns MB834200A x 2 pcs 98A5110 250 ns MB832000 x 8 pcs

Contextual Info: ^EDI EDI88128C 128Kx8 Monolithic Static Ram EkfCIROMC DESGNS. N C 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88128C is a high speed, high performance, mono­ 128Kx8 bits Monolithic CMOS Static lithic Static RAM organized as 128Kx8 bits.

EDI88128CS45CB

Contextual Info: E D I8 8 1 2 8 C S ^ E D L 128Kx8 Monolithic ELECTOONC DESIGNS. N C Static Ram F e a tu re s 128Kx8 Monolithic High Speed 128Kx8 bit CMOS Static CMOS Static RAM Random Access Memory • Fast Access Times: 15*,17*, 20,25,35,45, and 55ns The EDI88128CS is a high speed, high performance,