EDI88 Search Results

EDI88130CS20MI

Contextual Info: ^EDI _ EDI88130CS Beclronic Designs Inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory

Contextual Info: EDI8832C E lectronic Declgn« In c.« High Performance 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic Features 1.2. 1. 32Kx8 bit CMOS Static Random Access Memory • Access Times 70,85,100,120 and 150ns • Data Retention Function EDI8832LP only

Contextual Info: EDI88128C ELECTRONIC DESIGNS INC. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88128C is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. The device is also available as EDI88130C with an

Contextual Info: _ EDI88130CS m o \ Bedronic Detignt Inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory

Contextual Info: M Dl EDI8833C/LP/P High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS;Monolithic Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power CMOS Static RAM organized as 32,768 words by 8 bits each. Inputs and three-state outputs are TTL compatible and

Contextual Info: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES  Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby

Contextual Info: M D I EDI8832C/P55/70/85/100/120/150 High Performance 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic Features The EDI8832C/P is a high performance, low power CMOS Static RAM organized as 32,768 words by 8 bits each, tt is available in both standard power C and low

Contextual Info: EDI8M8257C 90/100/120/150 Module The fu tu re . . . today, i ÄDWÄNKgE DIMFÛI^IMIÂTDÛINI 256Kx8 SRAM CMOS, High Speed Module Features The EDI8M8257C is a 2048K 256Kx8 bit High Speed Static RAM module constructed using two EDI88128C (128Kx8) Static RAMs In teadless chip

Contextual Info: ^EDI EDI88512C ELECTRONIC DESIGNS INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM r a i u i i i M c w CMOS, Monolithic Features The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC stan­ dard for the four megabit device and is a pin for pin

Contextual Info: moi _ EDI8810H/L Electronic Designs Inc* Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The E D I8810H /L is a 65,653bit, 6 transistor cell C M O S Static RAM organized as 8Kx8. It is available in both standard H and low power (L)

SMD transistor n36

Abstract: smd transistor A13 transistor smd f36 CERAMIC FLATPACK SMD a7 Transistor smd transistor A8 EDI88128CS EDI88512CA EDI88512LPA 5962-95600XXMYA
Contextual Info: White Electronic Designs EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. Access Times of 15, 17, 20, 25, 35, 45, 55ns The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. All 32 pin packages

7085NS

Abstract: 88128 5962-89598 EDI88128C EDI88128LP EDI88130 EDI88130C EDI88130LP
Contextual Info: White Electronic Designs EDI88128C 128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. FEATURES Access Times of 70, 85, 100ns The device is also available as EDI88130C with an

EDI88257CA

Abstract: EDI88512CA
Contextual Info: EDI88257CA White Electronic Designs 256Kx8 Monolithic SRAM FEATURES The EDI88257CA is a 2 Megabit 256Kx8 bit Monolithic CMOS Static RAM. „ Access Times of 20, 25, 35, 45, 55ns „ Data Retention Function LPA Versions „ TTL Compatible Inputs and Outputs

Contextual Info: EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES  512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM.  Random Access Memory The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages

EDI88512CA

Abstract: EDI88128CS EDI8M8512C
Contextual Info: EDI88512CA ELECTRONIC DESGNS IN C .1 Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic Features The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolu­ tionary standard for the four megabit device and is a

Contextual Info: W D EDI88257CA \ 256Kx8 Static Ram ELECTRONIC DESIGNS, INC. 256m Static RAM CMOS, Monolithic Features 256Kx8 bit CMOS Static Random Access Memory The EDI88257CA is a 2 megabit Monolithic CMOS Static • Access Times: 2 0 ,2 5 ,3 5 ,4 5 and 55ns RAM. • Data Retention Function LP version

EDI88512CA20NB

Abstract: EDI88512CA45 and45ns TM315
Contextual Info: EDI88512CA m o \ ELECTRONIC D ESG N S INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic r a The 32 pin DIP pinout adheres to the JEDEC evolu­ tionary standard for the four megabit device and is a replacement for the 512K x 8 module, EDI8M8512C. All

ED188512CA20N36B

Abstract: ED188512CA25CB ED188512CA20 75B7 EDI88512CA20N36B EDI88512LPA20F32B EDI88128CS EDI88512CA EDI88512LPA EDI8M8512C
Contextual Info: W5X EDI88512CA 512Kx8 Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 17*, 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version

C27A8

Abstract: edibb257c EDI88257C EDI88512C EDI8M8257C
Contextual Info: ^EDI EDI88257C 256Kx8 Static Ram ELECTRONIC DESIGNS, INC 256Kx8 Static RAM CMOS, Module Features The EDI88257C is a 2 megabit Monolithic CMOS Static RAM. 256Kx8 bit CMOS Static The 32 pin DIP pinout adheres to the J EDEC standard for the two Random Access Memory

EDI88130C70CB

Abstract: EDI88128C100CB
Contextual Info: moi _ EDI88128C ELECTRONIC DESIGNS INC. • High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features 128Kx8 bits Monolithic CMOS Static Random Access Memory • Access Times: 70,85 and 100ns • Available with Single EDI88128 or Dual

EDI88128CS45CB

Abstract: as128Kx8 663D
Contextual Info: EDI88128CS ^ E D l 12SKx8 Monolithic Sialic Ram ELECTRONIC. DESIGNS, INC. Features 72RfGtf Monotihic Hicfi Speed CMOS Static RAM 128Kx8 bit CMOS Static Random Access Memory • Fast Access Times: 12,15r 17,2Q 25,35r 45r & 55ns TTie EDI88128CS is a high speect high performance

1CC3

Contextual Info: EDI8833C/LP/P m o i Electronic Designs Inc. High Speed 256K Monolithic SRAM »ynoiámf 32Kx8 Static RAM CMOS, Monolithic Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power, 262,144bit CMOS Static RAM orga­ nized as 32Kx8. Inputs and three-state outputs are TTL compatible

EDI8834C45MC

Abstract: EDI8834C-35 EDI8834
Contextual Info: ^EDI _ EDI8834C Electronic Detlgru Inc. High Speed Monolithic 256K Static RAM 32Kx8 Static RAM CMOS, Monolithic Features EDI8834C isa high perfomance, 262,144bitCMOS Static RAM organized as 32K by 8 bits. Combining high speed with low power, this device is ideal

EDI88130LPS25M

Abstract: EDI88130CS-RP 18kX
Contextual Info: m EDI88130CS-RP a E C IR O N C « S IG N S N C . 128Kx8 Static RAM CMOS, Monolithic F e a tu re s The EDI88130CS is a ruggedized plastic 128Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the