B72424Q Search Results
B72424Q Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MSM7581
Abstract: PAD10 PAD31 NC-641 M7581
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msm7581b724e4db72424dpad10+3 | |
DS24Contextual Info: O K I Semiconductor MSC238361A-xxBS24/PS24 8,388,608-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI M SC238361A-xxBS24/ DS24 is a fully decoded 8,388,608-word x 36-bit CMOS Dynamic Random Access Memory Module composed of sixteen 16-Mb DRAMs 4M x 4 in SOJ packages |
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msc238361a-xxbs24/ps24608-word36-bitmsc238361a-xxbs24/+3 | |
DTMF Tone Decoder
Abstract: TSOP32 pad DDS1703 MSM7570L-01 MSM7570L-02
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msm7570l-01/msm7570l-027570l-017570lmsm7570l-01/02+7 | |
"Bit Shift Register"
Abstract: MSM5839C MSM5839CGS-2K MSM5839CGS-K MSM5839CGS-L2
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msm5839c40-dqt40-bit20-bit+4 | |
MSM6546
Abstract: MSM6546L QFP100-P-1420-BK QFP100-P-1420-K
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msm6546/msm6546l-xmsm6546/6546l-xxb4b4024d03+4 | |
a10u
Abstract: B724e
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msm514101b/bl304-word1024cycles/16ms128ms+2 | |
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Contextual Info: O K I electronic components KGF1181B_ Medium-Power Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1181B is a two-stage medium-power UHF-band amplifier that features high gain, high output power, and low power dissipation. The internally matched 50 i2 input and output |
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kgf1181b_kgf1181bb7e4e40b72424d+1 | |
T462 transistor
Abstract: EZ613 transistor t462 MSM51C256 MSM51C256-10 MSM51C256-80 MSM51C256RS
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b72424dmsm51c256dip/18msm51c256-80+6 | |
MSM511665-10
Abstract: MSM511665-80
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b724240msm511665536-word16-bit+5 | |
hs 111-0
Abstract: MSM6052 MSM6352 DIP40-P-600 OKI
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24em0d013timsm635212-bits+3 | |
mx232
Abstract: YS2 100 a 741 j
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b724e4qmsc2328a-xxmsm514256ajsmsm514256a+6 | |
MSC7751
Abstract: VHVS130V
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b7e42m0msc775140-bit000fci4n+2 | |
oki m6688
Abstract: M6688 SHARP IC 701 I X11 voice activated recorder circuit evo cn GP 502 op amp ua 743 VOICE REC playback VOICE RECORDER and playback IC MSM6595 MSM6688
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msm6688msm6791m6688xxx-96q9insiai+10 | |
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Contextual Info: O K I Semiconductor MSM532000B 131,072-Word x 16-Bit Mask ROM DESCRIPTION The OKI MSM532000B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 16-bit capacity. The MSM532000B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro |
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msm532000b072-word16-bit128kxl6bits+1 | |
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d407
Abstract: s41 037 MSM6660-01 MSM6660-01GS-BK MSM6660-01GS-K MSM6660-02GS-BK MSM6660-02GS-K MSM6660-03GS-BK MSM6660-03GS-K
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msm6660-0162-dotmsm6660d38-d40+11 | |
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Contextual Info: •$ - M S M l- t t 5 6 V 1 6 4 0 0 2-B an k x 2,097,152-W ord x 4 -B it SYN CH RO N O U S DYN AM IC RAM DESCRIPTION The MSMS6V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and out puts are LVTTL Compatible. |
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msms6v16400152-word4096cycles/64m | |
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Contextual Info: O K I Semiconductor MSM75701 MSM7590 5V Single-Rail ADPCM CODECs DESCRIPTION The M SM 7570 and M SM 7590 are single-rail, low-voltage, single-channel, full-duplex AD PCM CODECs w hich perform voice digitization using presampling and reconstruction filters for transm it and receive |
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msm75701msm7590msm7570b72uh40 | |
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Contextual Info: O K I Semiconductor MSM5 14402A/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : STA TIC COLUM N MODE TYPE DESCRIPTION The MSM514402A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514402A/AL is OKI's CMOS silicon gate process technology. |
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4402a/al_576-wordmsm514402a/al576-w+4 | |
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Contextual Info: O K I Semiconductor MSC23108B/BL-XXDS2 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC23108B/BL-xxDS2 is a fully decoded 1,048,576-word x 8-bit CMOS Dynamic Random Access Memory Module composed of two 4-Mb DRAMs in SOJ MSM514400B/BL packages mounted |
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msc23108b/bl-xxds2576-wordsc23108b/bl-xxds2msm514400b/bl+1 | |
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Contextual Info: E2G 1 054-18-62 O K I Semiconductor MD56V62800A 4-Bank x 2,097,152-Word x 8-Bit SY N C H R O N O U S DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and |
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md56v62800a152-wordcycles/64b724b40 | |
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Contextual Info: O K I Semiconductor M S M 6 4 1 6 4 C -0 1 1 /0 1 2 Clock 1C with Temperature Measuring Function DESCRIPTION The M SM 64164C-011/012 is a preprogrammed version of the MSM64164C. The M SM 64164C-011/012 is dedicated to perform clock, dual channel temperature sensing and alarm applications. A visual LCD dis |
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64164c-011/012msm64164cmsm64164c-0msm64164c-012+2 | |
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Contextual Info: O K I Semiconductor MSC23240B/BL-XXBS20/DS20 2,097,152-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23240B / BL-xxBS20 /D S 2 0 is a fully decoded 2,097,152-w ord x 40-bit CM OS Dynamic Ran dom Access M em ory M odule com posed of twenty 4-M b DRAM s in SOJ M SM 514400B/BL packages |
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msc23240b/bl-xxbs20/ds20152-word40-bitmsc23240b+4 | |
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Contextual Info: O K I Semiconductor MSM5117805A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117805A achieves high integration, high-speed operation, and low-power |
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msm5117805a_152-wordmsm5117805a28-pin+1 | |
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Contextual Info: O K I Semiconductor MSM5 1V4400/SL_ 1,048,576-Word x 4-Bit DYNAMIC RAM: FAST PAGE MODE TYPE D ESC R IP T IO N The MSM51V4400/SL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit configuration. The technology used to fabricate the MSM51V4400/SL is OKI's CMOS silicon gate |
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1v4400/sl_576-wordmsm51v4400/sl576-w | |