B724E4D Search Results
B724E4D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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tone Dialer
Abstract: DD221 MSM6234 MSM6234RS VMSM6234RS
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msm6234themsm6234msm6234can16-pin+6 | |
MSM7581
Abstract: PAD10 PAD31 NC-641 M7581
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msm7581b724e4db72424dpad10+3 | |
MSM5116400CContextual Info: E 2 G 0 1 06-18-42 V $ \ O K I S e m ic o n d u c to r ^ve^on^.i*«^ M SM 5 1 1 6 4 0 0 C_ 4,194,304-W ord x 4 -B it D Y N A M IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS |
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e2g0106-18-42msm5116400c_304-wordmsm5116400c+1 | |
256kx16 ucas zipContextual Info: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance |
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msm5416256/msm54v16256msm5416256256kx16msm54+3 | |
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Contextual Info: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C |
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e2d0017-27-426652/53/54/55/56-xxx652a/53a/4a/55a/56a/58a-xxx+5 | |
26-PIN
Abstract: MSM514 ZIP20-P-400
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msm514101b/bl304-word1024cycles/16ms128ms+4 | |
081mContextual Info: O K I Semiconductor MSM51V17900_ 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51VI7900 is OKI's CMOS silicon gate process technology. |
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msm51v17900152-wordmsm51vi7900cycles/32ms+4 | |
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Contextual Info: MK31VT864A-8YC 98.06.26 O K I Semiconductor MK31VT864A-8YC 8,388,608 W ord x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1 BANK);_ DESCRIPTION The Oki MK31VT864A-8YC is a fully decoded, 8,388,608 x 64bit synchronous dynamic random access memory composed of eight 64M b DRAMs(8Mx8) in TS O P packages |
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mk31vt864a-8yc64bit168-pinx64-bit+1 | |
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Contextual Info: O K I Semiconductor MSC 23S 136B/BL-XXBS 12/DS12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23S136B/BL-xxBS12/DS12 is a fully decoded 1,048,576-word x 36-bit CMOS dynamic Ran dom Access Memory module composed of eight 4-Mb DRAMs in SOJ MSM514400B/BL packages and |
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136b/bl-xxbs12/ds12576-word36-bit+4 | |
MSM51V18160AContextual Info: O K I Semiconductor MSM51V18160A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160A is a 1,048,576-w ord x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V18160A achieves high integration, high-speed operation, and lowpow er consumption due to quadruple polysilicon double metal CMOS. The MSM51V18160A is |
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msm51v18160a576-word16-bit42-pin+1 | |
MSM51C256AContextual Info: O K I Semiconductor MSC2320B-XXYS9/DS9 262,144-Word by 36-Bit DRAM Module: Fast Page Mode D ESC R IP TIO N The O KI MSC2320B-xxYS9 /D S 9 is a fully decoded 262/144-word x 36-bit CM OS Dynamic Random Access Memory M odule . It is composed of eight 1-Mb DRAMs in SOJ M SM514256B packages, and four 256Kb |
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msc2320b-xxys9/ds9144-word36-bitmsc2320b-xxys9+4 | |
04S75
Abstract: MSM 80C51 oki 80C49 P MSM5259GS 80c49 MSM6262-01GS MSM5839CGS SM240 lcd module 40x4 7 SEGMENT DISPLAY 80c51 PIN CONFIGURATION
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7em24d0004a32t-52-13-07msm6262-01gs_+12 | |
FZJ 131
Abstract: BE454 MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS L262144 dynamic ram binary cell
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od04143msm51c256rs/jsmsm51c256dip/18+8 | |
Funai
Abstract: MSM65512 MSM65P512 DIP40-P-600 OKI DIP-40P GG13 addressing mode in core i7
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msm65512/65p512w9-19-msm65512nx-8/50+10 | |
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Contextual Info: O K I Semiconductor MSM514170 A/ASL 262,144-Word x 16-Bit D YN A M IC RAM : FAST PAGE M O D E TYPE DESCRIPTION The MSM514170A/ASL is a new generation Dynamic RAM organized as 262,144-word x 16-bit configuration. The technology used to fabricate the MSM514170A/ASL is OKI's CMOS silicon gate process |
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msm514170144-word16-bitmsm514170a/asl+1 | |
SC2314Contextual Info: O K I Semiconductor MSC23140B/BL-XXBS10/DS10 1,048,576-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC23140B/BL-xxBS10/DS10 is a fully decoded 1,048,576-word x 40-bit CMOS Dynamic Ran dom Access Memory Module composed of ten 4-Mb DRAMs in SOJ M SM 514400B/BL packages |
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msc23140b/bl-xxbs10/ds10576-word40-bitsc23140b/bl-xxbs10/ds10+3 | |
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Contextual Info: O K I electronic components KGF1203_ Balanced Mixer for UHF-Band and PCS Frequencies G E N E R A L DESCRIPTION The K G F1203, designed for U H F band up-con verters, is a balanced -m ixer IC that features high conversion gain, high local isolation, low voltage, and low current dissipation. Single-ended |
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kgf1203_f1203kgf1203b724e4d | |
501 CHB SPECIFICATIONS
Abstract: s41 415 501 CHB dodo VD 12 51 MSM6665-XX QFP128-P-1420-K S28EM PPP01 abb variable frequency drive wiring diagram S29Q
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msm6665-xx_17-dot80-dqtmsm6665-xx+11 | |
sj 2025
Abstract: ic sj 2025 IC 2025 TMI 1480 digital thermometer secs Ishizuka Electronics lcd N7 Thermometer ic preset variable resistor DIGITAL ALARM CLOCK
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msm5052-0180-pinqfp80-p-1420-kqfp84-p-1420-bk+11 | |
S82V16520
Abstract: 533 BA MS82V16520 QFP100-P-1420-0 AX2002 S82V
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e2l0056-28-91ms82v1652072424gdd275qti+5 | |
photo sensor pin diagram
Abstract: OIP101 SCHMIT TRIGGER
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b72m2m072mem02424gphoto sensor pin diagram+2 | |
delay echo circuit diagramContextual Info: OKI Semiconductor MSM7620 Echo Canceller GENERAL DESCRIPTION The MSM7620 is an improved version of the MSM7520 with the same basic configuration. The MSM7620 includes following improvements: a modified through mode, timing control of the control pin input, and a thinner package. The MSM7620 also provides a pin-for-pin replacement |
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msm7620msm75202424ddelay echo circuit diagram | |
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Contextual Info: O K I Sem iconductor M SC 23409C /C L-XXPS9 4,194,304-Word x 9-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23409C/CL-xxDS9 is a fully decoded 4,194,304-word x 9-bit CMOS Dynamic Random Access Memory Module composed of nine 4-Mb DRAMs 4M x 1 in SOJ packages |
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23409c304-wordmsc23409c/cl-xxds930-pin+1 | |
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Contextual Info: O K I Semiconductor MSM6810/6811/6812/6813 Single Chip CODEC GENERAL DESCRIPTION The MSM6810/6811 /6812/6813 are a single-channel CODEC CMOS ICs containing filters for A / D and D /A converting of the voice signal ranging from 300 Hz to 3400 Hz. FEATURES • Compliance with ITU-T com panding Law |
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msm6810/6811/6812/6813msm6810/6811msm6810/msm6812msm6811+5 | |