72424G Search Results
72424G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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HBT 01 - 01G
Abstract: DG20
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msc23t/pv2720a-xxbs9152-word72-bitmsc23t/dv2720a-xxbs9+4 | |
LMN 317
Abstract: BT 1610 digital volume control lg crt tv circuit diagram MSM6895 MSM6896 phenom 1090
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msm6895/msm6896002157blmn 317bt 1610 digital volume control+4 | |
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Contextual Info: K I SEMICONDUCTOR GROUP S3E D • b?24E40 O K I semiconductor MSC7125-XX OODbST? T-SZ-13>-0°I 5 x 7 DOT MATRIX, 8-DIGIT GENERAL DESCRIPTION The MSC7125-XX is a BiCMOS dot matrix display controller for vacuum fluorescent display tube. The MSC7125-XX drives displays with up to 8 grids with 35 anodes dots plus 5 annunciators. The |
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24e40msc7125-xx16-bitb724240+1 | |
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Contextual Info: OKI semiconductor MSM8 0 C3 1 F/MSM8 0 C5 1 F CMOS SINGLE-COMPONENT 8 -BIT MICROCONTROLLER GENERAL DESCRIPTION The OKI M SM 80C31F/M SM 80C51 F m icrocontroller is a low power, high performance 8-bit single component device implemented in O KI's silicon gate complem entary metaf oxide sem iconductor |
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80c31f/m80c51msm80c51f16-bit+1 | |
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Contextual Info: OKI electronic components O C360 PHOTO COUPLER GEN ERA L DESCRIPTION The OC360 is a photocoupler formed by combining a GaAs infrared light emitting diode and a phototransistor into a two-channel configuration. Encased in an 8-pin plastic package, the CXZ360 is |
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oc360cxz360e8683124b40+1 | |
M5117405
Abstract: msm5117405a Q020G m51174
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msm5117405a_304-wordmsm5117405a26/24-pin+4 | |
MSM7507-01
Abstract: MSM7507-01GS-VK MSM7507-02 MSM7507-03 MSM7508B MSM7509B
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msm7507-01702/msm7507-01703msm7507msm7508bmsm7509b+5 | |
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Contextual Info: O K I Semiconductor MSM5141OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology. |
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msm5141oob/bl304-wordmsm514100b/blcycles/16ms+1 | |
514100AContextual Info: O K I Semiconductor IC MSM6691 DRAM INTERFACE LSI Description Features DRAMs can be used for voice storage by connecting the MSM6691 with Oki's integrateR /W Read/Write LSIs, theMSM6388, andtheMSM6588. TheMSM6691 translates the signals associated with the dedicated |
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msm6691themsm6388andthemsm6588themsm6691+6 | |
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Contextual Info: O K I Semiconductor_ MSM5 1 2 8 0 5 A_ 262,144-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM512805A is a 262,144-word x 8-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM512805A achieves high integration, high-speed operation, and low-power |
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msm512805a_144-wordmsm512805a26/24-pin+1 | |
m65512
Abstract: MSM65512 circuit diagram cr-p2 65p512 MSM65512 MSM65P512 AD0P07 M-6551
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msm65512/65p512msm65512nx-8/5010mhz+11 | |
D010
Abstract: OLD234 910nm
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old23472424d754e40ifm/100+4 | |
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Contextual Info: O K I electronic components OCM 1X0, 1X1 SERIES Unidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM1XO and OCM1X1 Series are unidirectional DC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS |
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10-mapfl140/1b7e4240b7242l | |
B72LContextual Info: O K I Semiconductor MSM66P54-01702/03/04 MSM6650 family 1 Mbit OTP Built-in Speech Synthesis LSI G E N E R A L D E S C R IP T IO N The MSM66P54 is a single-chip CMOS speech synthesis LSI that has an on-chip OTP One Time PROM for speech data storage. This LSI is the OTP version for on-chip mask ROMs from the |
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msm66p54-01702/03/04msm6650msm66p54msm6652+5 | |
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Contextual Info: O K I Semiconductor MSM532030B 131,072-Word x 16-Bit Low-Voltage Mask ROM DESCRIPTION The OKI MSM532030B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 16-bit capacity. The MSM532030B operates on a single 3.0 V or 3.3 V power supply but offers the same fast access times |
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msm532030b072-word16-bitmsm532020b | |
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Contextual Info: O K I electronic components T36CP2, T36CP3, T54LCP Photo capsule GENERAL DESCRIPTION The T36CP2/T36CP3/T54LCP are sensors that are most suited to paper detection. For superior dustproof packaging and easy mounting, a phototransistor can be sealed encapsulated into a |
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t36cp2t36cp3t54lcpt36cp2/t36cp3/t54lcp+1 | |
l6d sensor
Abstract: MSM64164C almat P32CO
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msm64164c256-nibblel72m240l6d sensor+2 | |
MSM411001-10RS
Abstract: MSM411001-12RS
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b754s4dmsm411001576-bitmsm411001-10rs+1 | |
65P524
Abstract: SFT 352 0040H MSM65524 MSM65P524 TI OAE
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b72424d13tb7msm65524/65p524msm65524+8 | |
FST 460 transistor
Abstract: 80c85 UTM RESISTOR 210-9 sc2305 Transistor FST 461 QFP44-P-910-V1K Transistor FST 460 MSM6258
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ism6258/msm6258v6388/m12-bitmsm6258+12 | |
L72424D
Abstract: automatic meter reading "Optical Coupler" ocm220
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10-mab724240ocft/1240/241l72424d+5 | |
5116100Contextual Info: O K I Semiconductor MSM5116100_ 16,777,216-Word x 1-Bit D YN AM IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116100 is a new generation dynam ic organized as 16,777,216 w ord x 1-bit. The technology used to fabricate the MSM5116100 is OKI's CMOS silicon gate process technology. |
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msm5116100216-wordcycles/64msca100+3 | |
MSM51V16100Contextual Info: O K I Semiconductor MSM5 1 V16100 _ 16,777,216-W ord x 1 -B it DYN AM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V16100 is OKI's CMOS silicon gate process technology. |
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msm51v16100_216-wordmsm51v16100cycles/64ms+2 | |
SGCT
Abstract: sGCT function IC 741 amp 85to D021 MSM7586-01 MSM7586-01TS-K OD21A AVR QPSK utc8
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msm7586-01msm7586sgctsgct function+7 | |