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    24B40 Search Results

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    Eaton Corporation 124B40-00P

    Circuit Breakers SHORTSTOP CIRCUIT BREAKER
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    Mouser Electronics 124B40-00P 244
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    RS 124B40-00P Bulk 12 Weeks 250
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    Eaton Corporation 124B40-00M

    Circuit Breakers SHORTSTOP BREAKER
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    Mouser Electronics 124B40-00M
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    RS 124B40-00M Bulk 12 Weeks 250
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    RAF Electronic Hardware M1624-b-4007-al

    Standoffs & Spacers 10mm Rd X 22mm X M4 Thd
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    Mouser Electronics M1624-b-4007-al
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    RAF Electronic Hardware M2024-b-4007-s

    Standoffs & Spacers 8mm Rd X 17mm X M4 Thd
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    Mouser Electronics M2024-b-4007-s
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    RAF Electronic Hardware M2024-b-4007-al

    Standoffs & Spacers 8mm Rd X 17mm X M4 Thd
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    Mouser Electronics M2024-b-4007-al
    • 1 $3.09
    • 10 $2.86
    • 100 $2.55
    • 1000 $2.32
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    24B40 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IMSM514400

    Abstract: GG13 MSM temperature spec MSM514400 MSM514400-10 MSM514400-70 MSM514400-80 D013007
    Contextual Info: 5fl E » • b?24B40 O K I O K I s e m i c o n d □ D 1 2 ti tn OKIJ 042 S E MI C O N D U C T O R GROUP u - c t o r r - ^ - 2 3 - i g M S M 5 1 4 4 0 0 _ 1,048,576-Word x 4-Bit DYNAMIC RAM: FAST PAGE MODE TYPE_


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    24b40msm514400_576-wordmsm514400+926-pin20-pinimsm514400gg13msm temperature specmsm514400-10msm514400-70msm514400-80d013007 PDF

    MSM511000

    Abstract: ZIP20-P-400 msm511000h
    Contextual Info: O K I Semiconductor MSM5 1 1 0 0 0 H_ _ 1,048,576-W ord x 1-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E D ESCRIPTIO N The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power


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    msm511000h_576-wordmsm511000h18-pin+426/20-pin20-pinmsm511000zip20-p-400 PDF

    Contextual Info: OPA623 B U R R - B R O W N AVAILABLE IN DIE Wide Bandwidth, Current-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • BANDWIDTH: 350MHz, 2.8Vp-p HIGH OUTPUT CURRENT: ±70mA SLEW RATE: 2100V/ns, 5Vp-p DIFFERENTIAL GAIN/PHASE: 0.12%/0.05°


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    opa623350mhz100v/nsamplifiers23+310ns/div17313b50024bb3 PDF

    Contextual Info: O K I electronic components QL360N-5_ 1.3 urn High-Power Laser-Diode DIP Module G E N E R A L D ESC R IP TIO N The OL360N-5 is a 1.3 im, high-power laser diode DIP module with a single-mode fiber pigtail. The high-performance Oki laser diode achieved a single-mode fiber output of over 5 mW.


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    ql360n-5_ol360n-5b724240qd224b2+1h5200 PDF

    1X3 diode

    Abstract: 04ti
    Contextual Info: O K I electronic components PC I 1X2, 1X3 SERIES Unidirectional Optical M O S Relay GENERAL DESCRIPTION The OCM1X2 and OCM1X3 Series are unidirectional DC optical MOS relays, offering lower drive current than the OCM1XO / 1X1 Series. The input portion is a Ga As infrared light emitting diode. The


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    10-mab72424d24e4gl7e4240+21x3 diode04ti PDF

    Contextual Info: O K I Semiconductor MSM7503 Multi-Function PCM C O D E C GENERAL DESCRIPTION The MSM7503 is a high performance, low power CODEC LSI device integrating a 2-wire time division transmission ping-pong transmission interface function and has a basic function of


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    msm7503msm7502 PDF

    Contextual Info: OKI electronic components O C360 PHOTO COUPLER GEN ERA L DESCRIPTION The OC360 is a photocoupler formed by combining a GaAs infrared light emitting diode and a phototransistor into a two-channel configuration. Encased in an 8-pin plastic package, the CXZ360 is


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    oc360cxz360e8683124b40+1l724240 PDF

    S4-6V

    Abstract: 26-PIN
    Contextual Info: O K I Semiconductor MSM5 1V4 10 O/SL 4,194,304-W ord x 1-Bit D Y N A M IC R A M DESCRIPTION The MSM51V4100/SL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit configuration. The technology used to fabricate the MSM 51V4100/SL is OKI's CMOS silicon gate


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    msm51v4100/sl304-word1024cycles/16ms128ms+3b724240s4-6v26-pin PDF

    Contextual Info: O K I electronic components T36_ Silicon Planar Phototransistor GEN ERAL DESCRIPTION The planar structure of the OKI T36 silicon phototransistor provides a high degree of sensitivity. The T36 has wide application for a compact and light-weighted package.


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    q01flc24b40 PDF

    RC5 IR-E

    Abstract: MSM514100-10 MSM514100-70 MSM514100-80 Fast Cycle RAM
    Contextual Info: Sfl E D • b T S M S 1!^ O O I S T S ? O K I O K I s e m i c o n d u ^ 3 «O KIJ S E MI C O ND U C T O R c t o r T - 4 GROUP & - z s - i s " M S M 5 1 4 1 0 0 _ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE G E N ER A L DESCRIPTIO N


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    242i4q-zs-ts-msm514100304-wordmsm514100+9msivt51410026-pin20-pin18-pinrc5 ir-emsm514100-10msm514100-70msm514100-80fast cycle ram PDF

    301767

    Contextual Info: O K I Semiconductor MSM5 1 1664 A/AL 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The MSM511664A/AL is a new generation dynamic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the MSM511664A/AL is OKI's CMOS silicon gate process technology.


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    536-word16-bitmsm511664a/alcycles/32ms+2b724240301767 PDF

    TG714

    Abstract: msm7 MSM7508B MSM7509B MSM7541 MSM7542 MSM7566 MSM7567
    Contextual Info: O K I Semiconductor MSM7566/7567 Single Rail CODEC GENERAL DESCRIPTION The MSM7566 and MSM7567 are single-channel CODEC CMOS ICs for voice signals ranging from 300 to 3400 Hz. These devices contain filter for A /D and D /A conversion. Designed especially for a single-power supply and low -pow er applications, these devices are


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    msm7566msm7567msm7508bmsm7509b+500214s1tg714msm7msm7541msm7542 PDF

    MSM6815

    Abstract: j 6815 MSM6814 E137A
    Contextual Info: O K I Semiconductor MSM6 8 1 4 /6 8 1 5 Single Chip CODEC with Time Slot Assignment GENERAL DESCRIPTION The M SM 6814 and M SM 6815 are single chip CO DEC w ith tim e slot assignm ent TA CO D EC w hich are fabricated by O ki's low pow er consum ption CM O S silicon gate technology.


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    msm6814msm6815b724s40j 6815+1e137a PDF

    Contextual Info: O K I S e m iœ n d u c to r M S M 64 1 6 2 /M S M 6 4 1 6 2 D 4 -B it Single-Chip M icrocontroller DESCRIPTION The M SM 64162/M SM 64162D are high-perform ance CMOS 4-bit, single-chip m icrocontrollers which h av e b u ilt-in 128-n ib b le RA M , 16 I / O 's , b u z z e r o u tp u t, an d 2 4 LC D s e g m e n t d riv e rs . The


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    64162/m64162d128-nmsm64162+3msm64162d22for72424d PDF

    HA 16630

    Abstract: 910nm Infrared Emitting Diode OLD224 INFRARED EMITTING DIODE TO18 1000 nm light emitting diode
    Contextual Info: O K I electronic OLD224 components GaAlAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD224 is a high-output GaAl As infrared light em ission micro-diode sealed w ith a transparent epoxy resin in a TO-18 case. Its light em ission w ave length is peaks at 910 nm. Because of its high


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    old224b754240001603bl72h240+5ha 16630910nminfrared emitting diodeinfrared emitting diode to181000 nm light emitting diode PDF

    4BM0

    Abstract: 009 1155 s1z mixer KGF1155 KGF1155B
    Contextual Info: OKI electronic components KGF1 1 5 5 B/ 1 1 5 5 Small-Signal Amplifier for UHF-Band and PCS Frequencies GENEFtAL DESCRIPTION The K G F1155B is a sm all-signal U H F band am p lifier that features low noise and low current operation. The K G F1155B specifications are guaranteed b y the fixed m atching circuit of 5 V and


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    kgf1155b/1155f1155bf1155kgf1155b+44bm0009 1155s1z mixerkgf1155 PDF

    msc23136c

    Abstract: DS1060 MSC23136
    Contextual Info: O K I Semiconductor MSC2 3 1 3 6 C/CL-XXBS1 0 /P S 10 1,048,576-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23136C/CL-xxBS10/DS10 is a fully decoded 1,048,576-w ord x 36-bit CMOS Dynamic Random Access M emory M odule com posed of eight 4-Mb DRAMs 1M x 4 in SOJ


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    msc23136c/cl-xxbs10/ds10576-word36-bit72-pin+4msc23136c/cl-xxbs10msc23136cds1060msc23136 PDF

    upc 1185 h

    Abstract: mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E
    Contextual Info: Outline of Anritsu Corporation p.2 Quality, Reliability Assurance System, and Effort for Environmental Considerations p.3 How to Use This Catalog p.4 Sales, Shipping, and Service Information p.5 Sales Network p.6 Index p.7 Model Number Index p.9 New Products Descriptions


    Original
    as3b119gm10mas5b125em50mas6b118gm50m1310nm+111550nmupc 1185 hmobisdelay linear sweep generator using 555 timeranritsu ml524b operation manualfor vip tracking gsm and gps technology26ua42mu909014a1nokia 2700 classic circuit diagrammf2400cma8120e PDF

    Contextual Info: O K I Semiconductor MSC23S132B/BL-XXBS8/DS8 1,048,576-Word by 32-Bit DRAM Module: Fast Page Mode D E S C R IP TIO N The OKI M SC 23S132B/BL -xxBS8/D S8 is a fully decoded 1,048,576-word x 32-bit CM OS Dynamic Ran­ dom Access M em ory M odule com posed of eight 4-M b D RAM s in SO J M SM 514400B /B L packages


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    msc23s132b/bl-xxbs8/ds8576-word32-bitmsc23s132b+2msm514400b/bl72-pin PDF

    Contextual Info: O K I Semiconductor MSM51V16800A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM51V16800A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16800A is


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    msm51v16800a152-word28-pincycles/64 PDF

    20-PIN

    Abstract: 26-PIN ZIP20-P-400
    Contextual Info: O K I Semiconductor M SM 514400B/BL 1 ,0 4 8 , 576-Word x 4 - B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514400B/BL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology u sed to fabricate the M SM 514400B/BL is O K I's C M O S silicon gate process technology.


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    msm514400b/bl576-word1024cycles/16ms1024cycles/128ms+4b7e4e4020-pin26-pinzip20-p-400 PDF

    L70b

    Contextual Info: O K I Semiconductor MSM514410B/BL_ _ 1,048,576-Word x 4-Bit D YN AM IC RAM : FA S T P A G E M O D E T Y P E WRITE P ER BIT DESCRIPTION The MSM514410B/BL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514410B/BL is OKI's CMOS silicon gate process technology.


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    msm514410b/bl_576-wordmsm514410b/bl1024cycles/16ms+41024cycles/128msmsm51441ob/bl7242m0l70b PDF

    Contextual Info: O K I Semiconductor MSM27C231ZB_ 262,144-Word x 8-Bit Low-Voltage One Time PROM DESCRIPTION The MSM27C231ZB is a 2 Mb electrically Programmable Read-Only Memory organized as 262,144 words x 8 bits. The MSM27C231ZB operates on a single 3.3 V power supply and is TTL compatible. Since the


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    msm27c231zb_144-wordmsm27c231zb32-pin PDF

    Contextual Info: O K I Semiconductor MSM531031B_ 131,072-Word x 8-Bit Low-Voltage Mask ROM DESCRIPTION The OKI MSM531031B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 8-bit capacity. The MSM531031B operates on a single 3.0 V or 3.3 V power supply but offers the same fast access times


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    msm531031b_072-wordmsm531031bmsm531021b+232-pinb4240 PDF