24B40 Search Results
24B40 Price and Stock
Eaton Corporation 124B40-00PCircuit Breakers SHORTSTOP CIRCUIT BREAKER |
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124B40-00P | 244 |
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124B40-00P | Bulk | 12 Weeks | 250 |
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Eaton Corporation 124B40-00MCircuit Breakers SHORTSTOP BREAKER |
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124B40-00M |
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124B40-00M | Bulk | 12 Weeks | 250 |
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RAF Electronic Hardware M1624-b-4007-alStandoffs & Spacers 10mm Rd X 22mm X M4 Thd |
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M1624-b-4007-al |
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RAF Electronic Hardware M2024-b-4007-sStandoffs & Spacers 8mm Rd X 17mm X M4 Thd |
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M2024-b-4007-s |
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RAF Electronic Hardware M2024-b-4007-alStandoffs & Spacers 8mm Rd X 17mm X M4 Thd |
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24B40 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IMSM514400
Abstract: GG13 MSM temperature spec MSM514400 MSM514400-10 MSM514400-70 MSM514400-80 D013007
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24b40msm514400_576-wordmsm514400+9 | |
MSM511000
Abstract: ZIP20-P-400 msm511000h
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msm511000h_576-wordmsm511000h18-pin+4 | |
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Contextual Info: OPA623 B U R R - B R O W N AVAILABLE IN DIE Wide Bandwidth, Current-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • BANDWIDTH: 350MHz, 2.8Vp-p HIGH OUTPUT CURRENT: ±70mA SLEW RATE: 2100V/ns, 5Vp-p DIFFERENTIAL GAIN/PHASE: 0.12%/0.05° |
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opa623350mhz100v/nsamplifiers23+3 | |
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Contextual Info: O K I electronic components QL360N-5_ 1.3 urn High-Power Laser-Diode DIP Module G E N E R A L D ESC R IP TIO N The OL360N-5 is a 1.3 im, high-power laser diode DIP module with a single-mode fiber pigtail. The high-performance Oki laser diode achieved a single-mode fiber output of over 5 mW. |
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ql360n-5_ol360n-5b724240qd224b2+1 | |
1X3 diode
Abstract: 04ti
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10-mab72424d24e4gl7e4240+2 | |
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Contextual Info: O K I Semiconductor MSM7503 Multi-Function PCM C O D E C GENERAL DESCRIPTION The MSM7503 is a high performance, low power CODEC LSI device integrating a 2-wire time division transmission ping-pong transmission interface function and has a basic function of |
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msm7503msm7502 | |
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Contextual Info: OKI electronic components O C360 PHOTO COUPLER GEN ERA L DESCRIPTION The OC360 is a photocoupler formed by combining a GaAs infrared light emitting diode and a phototransistor into a two-channel configuration. Encased in an 8-pin plastic package, the CXZ360 is |
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oc360cxz360e8683124b40+1 | |
S4-6V
Abstract: 26-PIN
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msm51v4100/sl304-word1024cycles/16ms128ms+3 | |
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Contextual Info: O K I electronic components T36_ Silicon Planar Phototransistor GEN ERAL DESCRIPTION The planar structure of the OKI T36 silicon phototransistor provides a high degree of sensitivity. The T36 has wide application for a compact and light-weighted package. |
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q01flc24b40 | |
RC5 IR-E
Abstract: MSM514100-10 MSM514100-70 MSM514100-80 Fast Cycle RAM
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242i4q-zs-ts-msm514100304-wordmsm514100+9 | |
301767Contextual Info: O K I Semiconductor MSM5 1 1664 A/AL 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The MSM511664A/AL is a new generation dynamic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the MSM511664A/AL is OKI's CMOS silicon gate process technology. |
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536-word16-bitmsm511664a/alcycles/32ms+2 | |
TG714
Abstract: msm7 MSM7508B MSM7509B MSM7541 MSM7542 MSM7566 MSM7567
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msm7566msm7567msm7508bmsm7509b+5 | |
MSM6815
Abstract: j 6815 MSM6814 E137A
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msm6814msm6815b724s40j 6815+1 | |
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Contextual Info: O K I S e m iœ n d u c to r M S M 64 1 6 2 /M S M 6 4 1 6 2 D 4 -B it Single-Chip M icrocontroller DESCRIPTION The M SM 64162/M SM 64162D are high-perform ance CMOS 4-bit, single-chip m icrocontrollers which h av e b u ilt-in 128-n ib b le RA M , 16 I / O 's , b u z z e r o u tp u t, an d 2 4 LC D s e g m e n t d riv e rs . The |
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64162/m64162d128-nmsm64162+3 | |
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HA 16630
Abstract: 910nm Infrared Emitting Diode OLD224 INFRARED EMITTING DIODE TO18 1000 nm light emitting diode
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old224b754240001603bl72h240+5 | |
4BM0
Abstract: 009 1155 s1z mixer KGF1155 KGF1155B
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kgf1155b/1155f1155bf1155kgf1155b+4 | |
msc23136c
Abstract: DS1060 MSC23136
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msc23136c/cl-xxbs10/ds10576-word36-bit72-pin+4 | |
upc 1185 h
Abstract: mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E
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as3b119gm10mas5b125em50mas6b118gm50m1310nm+11 | |
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Contextual Info: O K I Semiconductor MSC23S132B/BL-XXBS8/DS8 1,048,576-Word by 32-Bit DRAM Module: Fast Page Mode D E S C R IP TIO N The OKI M SC 23S132B/BL -xxBS8/D S8 is a fully decoded 1,048,576-word x 32-bit CM OS Dynamic Ran dom Access M em ory M odule com posed of eight 4-M b D RAM s in SO J M SM 514400B /B L packages |
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msc23s132b/bl-xxbs8/ds8576-word32-bitmsc23s132b+2 | |
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Contextual Info: O K I Semiconductor MSM51V16800A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM51V16800A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16800A is |
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msm51v16800a152-word28-pincycles/64 | |
20-PIN
Abstract: 26-PIN ZIP20-P-400
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msm514400b/bl576-word1024cycles/16ms1024cycles/128ms+4 | |
L70bContextual Info: O K I Semiconductor MSM514410B/BL_ _ 1,048,576-Word x 4-Bit D YN AM IC RAM : FA S T P A G E M O D E T Y P E WRITE P ER BIT DESCRIPTION The MSM514410B/BL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514410B/BL is OKI's CMOS silicon gate process technology. |
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msm514410b/bl_576-wordmsm514410b/bl1024cycles/16ms+4 | |
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Contextual Info: O K I Semiconductor MSM27C231ZB_ 262,144-Word x 8-Bit Low-Voltage One Time PROM DESCRIPTION The MSM27C231ZB is a 2 Mb electrically Programmable Read-Only Memory organized as 262,144 words x 8 bits. The MSM27C231ZB operates on a single 3.3 V power supply and is TTL compatible. Since the |
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msm27c231zb_144-wordmsm27c231zb32-pin | |
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Contextual Info: O K I Semiconductor MSM531031B_ 131,072-Word x 8-Bit Low-Voltage Mask ROM DESCRIPTION The OKI MSM531031B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 8-bit capacity. The MSM531031B operates on a single 3.0 V or 3.3 V power supply but offers the same fast access times |
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msm531031b_072-wordmsm531031bmsm531021b+2 | |