24E4G Search Results

m51171

Contextual Info: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.

1X3 diode

Abstract: 04ti
Contextual Info: O K I electronic components PC I 1X2, 1X3 SERIES Unidirectional Optical M O S Relay GENERAL DESCRIPTION The OCM1X2 and OCM1X3 Series are unidirectional DC optical MOS relays, offering lower drive current than the OCM1XO / 1X1 Series. The input portion is a Ga As infrared light emitting diode. The

Contextual Info: O K I Semiconductor MSM7533H/7533V/7534 2ch Single Rail CODEC G E N E R A L D E SC R IP T IO N The M SM 7533 and M SM 7534 are tw o-channel C O D EC C M O S IC s for voice signals ran ging from 300 to 3400 Hz. These d evices contain filters for A / D and D /A conversion.

0pp1

Abstract: MSM64167 VOPPR
Contextual Info: O K I Semiconductor MSM64167_ Built-in Duai-slope type A/D Converter and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The MSM64167 is a low-power 4-bit microcontroller that incorporates OKI's nX-4/20 CPU core. The MSM64167 has a minimum instruction execution time of 4.3 is (@ 700 kHz . The device

P51NR

Abstract: MSM65513 MSM65P513 vibrator ad0p07
Contextual Info: O K I Semiconductor MSM65513/65P513 Oki Original High Perform ance C M O S 8-Bit Microcontroller GEN ERAL DESCRIPTION The MSM65513 is a high-performance 8-bit microcontroller that employs Oki's original nX-8/50 CPU core. With a minimum instruction execution time of 400 ns 10MHz clock , the MSM65513 is

Contextual Info: O K I Semiconductor MSM514100C/CL 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514100C /C L is a 4 , 1 9 4 ,3 0 4 -w o r d * 1-bit dynam ic RAM fabricated in OKI's C M O S silicon gate technology. The M SM 514100C /C L achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon single m etal CM O S. The M SM 514100C /C L is

4424 ym

Abstract: oki voice synthesizer msm6375 tba 2929 07FFD 20191 MSM505 MSM6376 KF-38S4 MSM6374-006 MSM6373-329
Contextual Info: O K I Semiconductor M S M 6375/4/3/2-X X X 1 M -b it/5 1 2 K -b it/2 5 6 K -b it/1 2 8 K -b it M A S K R O M SPEECH SY N TH E S IZ E R G ENER AL D ES C R IP TIO N T he M SM 6375 series is a n A D PC M speech sy n th esis LSI u tilizin g a C M O S sp eech p ro ­

FST 460 transistor

Abstract: 80c85 UTM RESISTOR 210-9 sc2305 Transistor FST 461 QFP44-P-910-V1K Transistor FST 460 MSM6258
Contextual Info: O K I Semiconductor ISM6258/MSM6258V ADPCM S P E E C H P R O C E S S O R FO R SO LID ST A T E R E C O R D E R TO C U S T O M ER S FO R NEW C IR C U IT DESIGN For a new circuit design, it is recommended to use not the M SM 6258, but the M SM 6388/ M SM 6588 as described later.

d92-d2

Abstract: 7-Segment Display Driver with Decoder
Contextual Info: 5ÔE J> m b72424D 0D145fl5 7CH « O K I J O K I semiconductor -t-sz-is-a>? M S C 1 1 7 8 /M S C 1 1 7 9 K 1 s e h i c o n i >u c t o k ¿ roup 7-SEGMENT DRIVER GENERAL DESCRIPTION The MSC1178/79 is a BiCMOS structure static display driver to directly drive a

M514402

Abstract: 20-PIN 26-PIN ZIP20-P-400-W1 M514402B
Contextual Info: O K I Semiconductor MSM5 1 4402B/BL 1,048,576-Word x 4-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION The MSM514402B/BL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514402B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor M SC23C132C/CL-XXBS8 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23C132C/CL-xxBS8 is a fully decoded 1,048,576-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 4-Mb DRAMs 1M x 4 in TSOP packages

Contextual Info: O K I Sem iconductor M SM6650 External ROM Drive Speech Synthesis LSI GENERAL DESCRIPTION MSM6650, a successor to OKI's MSM6376 speech synthesis LSI, can externally store d ata by directly connecting a m axim um 64 M bit ROM or EPROM. The PCM m ethod is ad d ed to the

Contextual Info: OKI Semiconductor MSIW5110OOB/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM514256H 262,144-Word x 4-Bit DYNAMIC RAM DESCRIPTION The MSM514256H is a new generation dynamic RAM organized as 262,144-word x 4-bit. The technology used to fabricate the MSM514256H is OKI's CMOS silicon gate process technology. The

ST chn 624

Abstract: chn 712 LSPM2 CHN 618 chn 631 chn 648 equivalent CHN 602 CHN 612 h724 MSM6588
Contextual Info: O K I Semiconductor MSM6588 M S M 6588 contents GENGERAL D ESCRIPTION . 568 FEATURES. 568

MSM514102-10

Abstract: MSM514102-8A
Contextual Info: Mb E D • 3724240 G G O W l bbO H O K I J O K I sem iconductor_ T - v <-23 - J * M SM 514102 K 1 SEMICONDUCTOR g r o u p 4,194,304-WORDx 1-BIT DYNAMIC RAM: STATIC COLUMN MODE TYPE GENERAL DESCRIPTION The MSM514102 is a new generation dynamic RAM organized as 4,194,304 words by 1 bit.