081M Search Results

MTA-100

Contextual Info: This document was generated on 02/03/2010 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0191640018 Active Perma-Seal Female Quick Disconnect Receptacle for 18-22 AWG Wire, Tab Size 6.35mm .250" x .081mm (.032"), Mylar Tape Carrier

MTA-100

Contextual Info: This document was generated on 02/03/2010 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0191640051 Active Perma-Seal Female Quick Disconnect Receptacle for 14-16 AWG Wire, Tab Size 6.35mm .250" x .081mm (.032"), Mylar Tape Carrier

E79133

Contextual Info: This document was generated on 02/03/2010 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0191640076 Active Perma-Seal Female Quick Disconnect Receptacle for 10-12 AWG Wire, Tab Size 6.35mm .250" x .081mm (.032")

AT-200

Contextual Info: This document was generated on 12/09/2009 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0191640017 Active Perma-Seal Female Quick Disconnect Receptacle for 18-22 AWG Wire, Tab Size 6.35mm .250" x .081mm (.032")

AT-200

Contextual Info: This document was generated on 02/03/2010 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0191640050 Active Perma-Seal Female Quick Disconnect Receptacle for 14-16 AWG Wire, Tab Size 6.35mm .250" x .081mm (.032")

E17385

Contextual Info: 1170 Tape Aluminum Foil with Conductive Adhesive Data Sheet Product Description Applications 3M 1170 Tape consists of a 1-ounce deadsoft aluminum foil backing and a unique electrically conductive pressure-sensitive acrylic adhesive. 3M 1170 Tape is typically used for

m51171

Contextual Info: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.

TL081

Abstract: TL081M TL081C small signal amplifier JFET
Contextual Info: THOMSON SEMICONDUCTORS J TL081 J-FE T IN P U T S IN G LE O P -A M P s T h e T L 0 8 1 is a h ig h s p e e d J - F E T in p u t s in g le o p e r a tio n a l a m p lifie r in c o r p o r a t in g w e ll m a tc h e d , h ig h v o lt a g e J - F E T a n d b ip o la r t r a n s is to r s in a m o n o lith ic

MSM5116180-70

Abstract: MSM5116180-80
Contextual Info: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.

Bv 42 transistor

Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

32-PIN

Abstract: A10E MSM51V16900-70 MSM51V16900-80
Contextual Info: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.

Bv 42 transistor

Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
Contextual Info: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.

MSM5117180-70

Abstract: MSM5117180-80
Contextual Info: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

Contextual Info: NOTES: 1 . REPRESENTS A CRITICAL DIMENSION. 7. SEE TABLE I FO? CABLE CUT DiMENSCNS. 3 HEAT SHRINK B STANDARD O N ENDS WITH S V A - BKK BIAXHEAOS. NOT A V A L A B lE CN/MHXRPENOS. R F 081-M H 1R P -M H R P -X X X X E DESIGNED ft DIMENSIONED IN MILUMETERS INCHES

Bv 42 transistor

Abstract: tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400
Contextual Info: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.

MB4313

Contextual Info: FUJITSU April 1990 Editbn 1.0 PRODUCT PROFILE MB4313 ReadA/Vrite Bus Driver/Receiver DESCRIPTION T h e Fujitsu M B 4 3 1 3 is designed as a driver/receiver to be used as an interface betw een a m agnetic disk drive and a control unit. Th e M B 4 3 1 3 transfers the read-out

20 TI 54240

Abstract: MSM51VI6180
Contextual Info: O K I Semiconductor MSM51 V16180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.

081AC

Abstract: TL081 TL081BCN TL081ACN micropac tl081cn JESD97 TL081A TL081B TL081C
Contextual Info: TL081 General purpose JFET single operational amplifiers Features • Wide common-mode up to VCC+ and differential voltage range ■ Low input bias and offset current ■ Output short-circuit protection ■ High input impedance JFET input stage ■ Internal frequency compensation

Contextual Info: 1170 Tape Aluminum Foil with Conductive Adhesive Data Sheet Product Description Applications 3M 1170 Tape consists of a 1-ounce deadsoft aluminum foil backing and a unique electrically conductive pressure-sensitive acrylic adhesive. 3M 1170 Tape is typically used for applications

AuthenTec

Abstract: AuthenTec fingerprint "Fingerprint module" Fingerprint swipe Sensor 15KV 2501B fingerprint sensor pixel array biometric sensor biometric authentec sensor
Contextual Info: AuthenTec EntréPad 2501B World’s Most Proven, Secure Slide Sensor for the PC Market The EntréPad 2501B is the industry’s most proven and flexible slide sensor – combining advanced security and touch-powered features in a solution that is used in more than 1 million biometric notebooks,

E17385

Abstract: UL510 0ANZ
Contextual Info: 1170 Tape Aluminum Foil with Conductive Adhesive Data Sheet Product Description Applications 3M 1170 Tape consists of a 1-ounce deadsoft aluminum foil backing and a unique electrically conductive pressure-sensitive acrylic adhesive. 3M 1170 Tape is typically used for applications

32-PIN

Abstract: MSM5116900-70 MSM5116900-80 B724e
Contextual Info: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.