T4211 Search Results

MB60K

Abstract: C-20Q0 MIKROELEKTRONIK Frankfurt
Contextual Info: M B 60K Silico n G ate C M O S L S I The Fujitsu C-20Q0 M B 6 0 K Series is a highly integrated, low power, gate array LS I fabricated with silicon gate C M O S technology! The array consists of 2000 internal basic unit cells (2 input N A N D equiva­ lent) and 72 I/O cells. With the application of a

Contextual Info: 5QE D 44^503 G01341Q 5 HITACHI/ L0GIC/ARRAYS/MÉÎ1 0 H IT A C H I S e p t e m b e r , 1985 CMOS GATE ARRAYS i HD61 SERIES DESIGNER'S MANUAL AND PRODUCT SPECIFICATION HITACHI/ LOGIC/ARR'A YS/MEM SQE D • 4 4TLS03 0G13411 4 T -42-11-09 CMOS GATE ARRAYS HD61 SERIES

macrocell ecl

Abstract: 4S514
Contextual Info: HONEYWELL DIGITAL PRODUCT bb dË J 4SS14S3 0000D43 *=1 T-42-11-13 JUNE 1985 ECL GATE ARRAY HE8000 PRO DUCT DESCRIPTION The HE8000 Gate Array Figure 1 is a 250 picosecond, 8000 equivalent gate density Very Large Scale Integra­ tion (VLSI) monolithic integrated circuit built using

U904

Abstract: U902
Contextual Info: - ;-:-ff HONEYWELL DIGITAL PRODUCT Lb D E 4SS14S3 OODOIOD b | • ’ LSTTL GATE ARRAY —-:-_ T-42-11-15 MARCH 1985 HT5000 PRODUCT DESCRIPTION The HT5000 G ate A rray (Figure 1 is a 600 picosecond, 5000 equivalent gate density Very Large

fujitsu DIP-42

Abstract: FPT-80 BC800 FPT-64
Contextual Info: FUJ I TS U M I C R O E L E C T R O N I C S 31E D El 374^7^2 0ai45b4 0 HFfll ECL and BiCMOS ASIC T-42-11-15 BC BiCMOS Gate Array Device Description Max. Number of :/ Signal Pins v Cell 2 Propagation Delay Device Name Complexity1 BC400 430 gates 52 BC800 812 gates

64 PIN CERDIP

Contextual Info: HONEYWELL DIGITAL PRODUCT bb D E * 4SS14S3 0000050 b • ■ ■ RAD HARD ECL/TTL GATE ARRAY PRODUCT DESCRIPTION The HM1000R Gate Array Figure 1 is an 800 pico­ second, 1000 equivalent gate density LSI monolithic integrated circuit built using Honeywell’s radiation

PS8101T

Abstract: J3303 j3305 AR8121 P2003EVG ASM1442T AU-6433 RT8206 AR8131 UP7711U8
Contextual Info: 5 D 4 3 Penryn SFF BLOCK DIAGRAM ULV 2 CPU DUAL CORE: SU9400 1.4 GHz SU9300 1.3 GHz SINGLE CORE: SU3300 1.2GHz 1 CLOCK GENERATOR FAN & THERMAL SENSOR D 956 uFCBGA FSB 800MHz LVDS DDR2 667 GS45 Express CRT ON BOARD DDR2 2Gb X 8 HDMI LEVEL SHIFTER Parade PS8101T

VGT300039

Abstract: PT6045 VGT300022 PT6005
Contextual Info: V L S I TECHNOLOGY INC 47 E D T3flfl34? n o n a T T a V L S I Tech n o lo gy , in c . 3 VTI T -H Z -d -C R VGT350/VGT353 LIBRARY I.O-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology

dcl1

Contextual Info: fÆIK INTNTL MICROELCTN DCL Digital Cell Library IMP’s Digital Cell Library DCL is designed to be compatible with IMP’s Analog Cell Library (ACL). The dual layer metal, silicon gate CMOS Standard Cells offer high performance with low power consumption

NPN Transistor PT7

Abstract: ITT K12 series switch T flip flop IC UTM RESISTOR 214 24 volt 6 amp power supply chips kaa x5 amd k10 Toggle flip flop IC P144 resistor 10 kohm
Contextual Info: MAE D C I SEMICONDUCTOR • 3 0 H 0 7b 7 00000=15 Û00 W E C I S DESIGN SUPPORT The senior designers at ECI are within easy reach to support you and your program. . To begin the process just deliver your schematic and input-output -requirements to ECI. We will design a chip to

uPB6101C

Abstract: NEC C51A N021C F010 nec inverter schematic nec lot code format T-42-11-05
Contextual Info: N É C ELECTRONICS INC 7H D e | LiMH752S DD0Û110 1 NEC N E C Electronics Inc. c T-.42-11-05 //PB 6100 TTL-2 SERIES BIPOLAR TTL GATE ARRAYS March 1985 Revision 1 Description The //PB6100 series features three high-speed, lowpower, TTL-compatible gate arrays using advanced

NAND Gates

Abstract: Buffers pin configuration of logic gates schematic of TTL OR Gates 8A2176 logic gates pin configuration signetics nand gates
Contextual Info: S4C D NAPC/ SIGNETICS 8250006 SIGNETICS bbSBTSM 0021771 CORP 54C 7 »SIC3 21771 BIPOLAR LSI PRODUCTS ISL GATE ARRAY 8A2176 T-42-11-05 FEATURES tegrated Schottky Logic , ISL combines the features of Schottky and the density of l2L Bipolar technologies. • Customer programmable LSI

MATRA

Abstract: t4211 MCT12K MC10K
Contextual Info: 4TE — MATRA D H H S Preliminary • SflböMSb GÜ0E3Ü4 43T ■ H M H S =T 7= iiiiK iiii l i T H January 1991 ASIC HI-REL DATA SHEET MC GATE ARRAY SERIES 0.8 MICRON SCMOS FEATURES SUPER CMOS TECHNOLOGY -1 nm DRAWN 2 METAL LAYERS FLEXIBLE I/O CONFIGURATION : INPUT,

NEC C51A

Abstract: nec inverter schematic F074 marking B007 marking B003 JH-04 UPB6101C
Contextual Info: N É C ELECTRONICS INC 7H c D e | LiMH752S DD0Û110 1 NEC NEC Electronics Inc. T-.42-11-05 //PB 6100 TTL-2 SERIES BIPOLAR TTL GATE ARRAYS March 1985 Revision 1 Description The //PB6100 series features three high-speed, lowpower, TTL-compatible gate arrays using advanced

LDD100-3

Abstract: LSI CMOS GATE ARRAY
Contextual Info: L S I LOGIC CORP 42E ¿ 3 DMADM QQDMSgc BiCMOS LDD10000 Direct Drive Array Series Description The LDD10000 D irect Drive Array series is a BiCMOS array-based A pplication Specific Integrated Circuit ASIC) offering the fast speed, low pow er dissipation and very high

schematic diagram NAND gates

Abstract: logic gates circuit diagram schematic of TTL OR Gates sama logic schematic diagram AND gates pin configuration of logic gates logic gates pin configuration signetics nand gates Buffers NAND Gates
Contextual Info: NAPC/ S I G N E T I C S 8250006 54C D SIGNETICS • bbSBiBM 0021771 CDRP 54C BIPOLAR LSI PRODUCTS tegrated Schottky Logic . ISL combines the features of Schottky and the density of |2L Bipolar technologies. Customer programmable LSI 2016 ISL NAND) gates 72 Schottky buffers

T-42t11-05

Contextual Info: CHERRY SEMICONDUCTOR CORP SS 2067556 CHERRY SEMICONDUCTOR CORP D e I 5Dt?SSt D O D O T O a 7 I 85D 00908 r . ^ „ ' T -T-42-11-05 l 2L DIGITAL GATE ARRAY .1200 SEM I-CUSTOM 1C • CHIP SIZE: 9 7 x 1 1 9 mils • BONDING PADS: 30 • M AX OPERATING VOLTAGE: 12V

T3822A

Abstract: DIN 3113 T6218 T3492 T0831 skimmer T0080 4mm banana plug socket chain saw lock jaw bolt
Contextual Info: Mainstesters Hand Tools 4952 Mainstester 220-250V AC DIN 57680-6, DIN VDE 0680-6:1972-04 Item Number 440007 65mm 3mm 0.5mm VDE approved mainstester. One piece moulded blade and handle with insulation for assured safety, high visibility permanently sealed resistance neon tube. Top quality chrome vanadium blade and nickel

IC 7400 nand

Abstract: 7400 fan-in Raytheon 74 cga20
Contextual Info: R A Y T H E O N n SE MI CO ND UC TOR 71 Ö e | 75^73^0 OODSlt.7 5 | Product Specifications Sem icustom Digital Products • T-42-11-05 ISL Bipolar Gate Arrays ü a ^ t is s o n ISL Bipolar Gate Arrays Features n • ■ ■ ■ Mask programmed customer defined logic

schottky diode sb 5400

Abstract: 0741L UL1560 IMX86 imx26 ILX02 TJ 1H 74LSXX IC 074CM RHX11
Contextual Info: napc/ signetics labSBIEH 0021720 1 « S I C 3 SHC D “ 8 2 5 0 0 O 'ò ^ S T G 'N jH T T C 5” C Ü R P 5 4C "'2L 720 BIPOLAR LSI PRODUCTS COMPOSITE CELL LOGIC CCL SEMI-CUSTOM FAMILY = r~ _ T-42-11-05 The packing density of an IS L cell (Figure 3) is two to three times

c034

Abstract: C045 GA08 ga01
Contextual Info: N E C ELECTRONICS I NC 7S Ï Ë | b42752S % DODflni S |~" T - 4 2 - 11-Ï3 //P B 6 3 0 0 1 0 K H S ER IES B IPO LA R ECL GATE A R R A YS 1 N E C Electronics Inc. ( • December 1984 Description //PB6311 Specifications The //PB6300 (10KH) series consists of three ultrahigh-speed ECL gate arrays, compatible with an

pin diagram of full adder using Multiplexer IC

Abstract: tr f422 UPD65000 fj01 F713 f422 F715 PD65080 F-661 F-642
Contextual Info: N E C ELECTRONICS INC 7 5 D E ] b4E75B5 ODDfiBlfi 3 SEC NEC Electronics Inc. T-42-11 09 % ¿tPD65000 CMOS-3 SERIES cm os g a te a r r a y s 2 -m ic ro n January 1985 Description The//PD65000 (CMOS-3) series of gate arrays are lowpower, high-speed devices featuring 2-micron silicon

MT 2800 N

Abstract: Siemens Ferrite n72 ferrite Ring Core matsua etd 49 core
Contextual Info: SIFERRIT Materials Material properties Resonant circuit inductors Preferred application Material uT7T r ' K I2 1' K1 M il <10 Base material NiZn NiZn NiZn NiZn NiZn MnZn grey yellow violet brown — white 250 ±20% 600 750 Symbol j Unit Color code Initial permeability

ALU IC 74181 circuit diagram

Abstract: TTL 74189
Contextual Info: ]>î| G5S7S5b DOEIOOB 1 ADV MICRO P LA /P LE/A RR AY S 7h 0 2 5 7 5 2 6 ADV MICRO PLA/PLE/ARRAYS 76C 21003 T-42-11-09 A m 7 2 2 a Q 2200 Gate HCMOS Evaluation Macrocell Array & ¡ it PRELIMINARY > 3 •Vj DISTINCTIVE CHARACTERISTICS Delay measurement block: