J22833 Search Results

MB60K

Abstract: C-20Q0 MIKROELEKTRONIK Frankfurt
Contextual Info: M B 60K Silico n G ate C M O S L S I The Fujitsu C-20Q0 M B 6 0 K Series is a highly integrated, low power, gate array LS I fabricated with silicon gate C M O S technology! The array consists of 2000 internal basic unit cells (2 input N A N D equiva­ lent) and 72 I/O cells. With the application of a

B-500 diode

Abstract: darlington buffer array B-500 MB15K Fujitsu Transistor Array fujitsu 42pin MB-15
Contextual Info: MB 15K Low Power Schottky TTL FUJITSU 03 DEV 374^7^5 Absolute Maximum Ratings Symbol Value Unit Supply Voltage Vc c 7 V Input Voltage V| —0.5 to +5.5 V Output Voltage v0 —0.5 to +5.5 V Operating Temperature V qp —25 to +85 °C —65 to +150 °c Rating

mbm27c128

Abstract: CERAMIC LEADLESS CHIP CARRIER LCC 32 socket 27C128-25-X BM TVS M27C128
Contextual Info: FU JITSU CMOS UV ERASABLE 131072-BIT READ ONLY MEMORY TS119-A886 June 1988 CMOS 131072 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C128 is a high speed 131,072 bit static complementary MOS erasable and electrically reprogrammable read only memory EPROM .

Contextual Info: FUJITSU 8-CH 10-BIT A/D CONVERTER ADC MB4051 July 1989 E dition 1.0 8-CHANNEL 10-BIT A /D CONVERTER The Fujitsu MB4051 is a general purpose analog-to-digital converter (ADC) w hich features eight channels o f analog inputs, 1 0 -b it parallel data I/O port

MB8861

Abstract: MB886 B882 MB885
Contextual Info: $$+$$/$%%$^ FUJITSU January 1989 E ditio n 3.0 U L T R A HIGH SPEED E C L F A M IL Y T h e F u jits u M B 8 8 0 series is a fa m ily o f u ltra high speed E C L integrated circu its. It is useful fo r G iga-bits fib e r c o m m u n ic a tio n system s, and ele ctrica l

nand gate layout

Abstract: darlington buffer array B2000 High speed output buffer IC 5V 502-016
Contextual Info: MB 17K Low Power Schottky TTL c c_ The Fujitsu B-2000 IV1B17K series is an integrated circuit gate array fabricated with a low power Schottky T T L (Transistor-Transistor Logic) process. The array consists of 2108 internal 3-input NAND gates and 112 input/output buffers.

Contextual Info: T—42—11—-09' MB 66000V H Silicon Gate CMOS LSI The Fujitsu C -8 0 0 0 V H M B 6 6 0 0 0 V H Series is a very highly integrated, low power and high speed, gate array L S I fabricated w ith silicon gate C M O S technol­ ogy. The array consists o f 8 0 0 0 internal basic cells (2

F200L

Abstract: furukawa utp
Contextual Info: N FUJITSU MOS 1048576 BIT DYNAMIC RANDOM ACCESS MEMORY M B 811001-10 MB 811001-12 MB 811001-15 December 1986 Edition 2.0 1,048,576 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB 811001 is fu lly decoded NMOS dynamic random access memory organized as 1,048,576 words by one bit. The design is optimized for

MB8867

Abstract: MBL6800 SN7402 MB417
Contextual Info: F U J IT S U TTL TWO-PHASE CLOCK GENERATOR AND DRIVER MB 8867 MB 8867E October 1982 Edition 2.0 TWO-PHASE MICROPROCESSOR CLOCK The Fujitsu MB 8867 is an advanced Microprocessor Clock Generator/Driver LSI manufactured with Fujitsu's bipolar TTL process. The circuit generates

Contextual Info: De J 374T7bS ODDOñHñ 4 T-42-11-09 M B 6 0 K Silicon Gate C M O S L S I T h e Fujitsu C -1500 M B 6 0 K Series is a highly integrated, low power, gate array L S I fabricated w ith silicon gate C M O S technology. T h e array consists of 2 000 internal basic unit cells (2 input N A N D equiva­

ZIP-20P-M02

Abstract: MIKROELEKTRONIK Frankfurt
Contextual Info: jc -> f* ft -t. N Q MOS 1048576 BIT FUJITSU DYNAMIC RANDOM ACCESS MEMORY MB 811001-10 MB 811001-12 MB 811001-15 December 1986 E dition 2.0 1,048,576 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB 811001 is fully decoded NMOS dynamic random access memory organized as 1,048,576 words by one bit. The design is optimized for