IFt SC-74
Contextual Info: h7 > V UMT2N/IMT2A $ / T ransistors ~p V is — t "j i “ \/ K t / W ^ Isolated Mini-Mold Device —f i x / G e n e r a l Small Signal Amp. • fl-fl^SsEI/Dimensions Unit : mm) 1) UMT (SC-70), SMT (SC-59) ¿11 — ftfllC IM T2A UM T2N 2 f l l t f ) h 7 > v ' X i i A'* A -3 T
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transistor t2a
Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200
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bsy95aztx310bsv23ztx311+14bsv24ztx312bsv25ztx313bsv26ztx314transistor t2anpn transistor 2n2222ast 2n 2907azdt- 5vbsv27j 2n2369ztx312 dataztx313 data
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transistor t2a
Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200
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bsy95aztx310bsv23ztx311+14bsv24ztx312bsv25ztx313bsv26ztx314transistor t2a2n2206 transistorztx312 transistor2n2475n706absx122n2206j 2n2369
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2n222a
Abstract: CV7644 ZTX326 2n3600 CV7371 CV7373 ZT80 ZT83 ZT1481 ZT86
Contextual Info: ZT80-ZT180 Series— Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA The diagram shows the wide range of applications for which the TO-18 encapsulated ZT80 Series-ZT180 Series vCE SAT 0.3
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zt80-zt180100maseries-zt180zt110-zt280+13cv7373cv7644cv7371cv7372zt183zt1842n222aztx3262n3600zt80zt83zt1481zt86
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ZT2120
Abstract: ZT43 ZT1702 100-C ZT1479 ZT1480 ZT1481 ZT1482 ZT1483 ZT1484
Contextual Info: SILICON TRANSISTORS Power n-p-n Maximum Ratings Type No. v CBO v CEO(sus) Characteristics Dissipation Watts Ic fa Typical R (sat> (max.) hFE Jedec Outline volts volts amps •ZT1479 •ZT1480 •ZT1481 •ZT1482 •ZT1483 •ZT1484 •ZT1485 •ZT1486 •ZT1487
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100-czt1479zt1480zt1481+9zt1482zt1483zt1484zt110zt1192n929zt2120zt43zt1702
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2n3866 sos
Abstract: 2n4041 2N4127 BFS98 2n3733 BFS96 BFS97 BSV33 ZT180 ZT181
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 25°C amb. mW VCE(sat) max. volts volts volts volts BFS96 BFS97 B FS98 -6 0 -6 0 -8 0 -3 0 -4 0 -6 0 -5 -5 -5 500 500 500
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bfs96bfs97bfs98-150t+9bfs59-61ztx510bsv332n3866 sos2n40412n41272n3733zt180zt181
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2N3866 pin diagram
Abstract: CV7753 2N4429 BFS98 CV7644 ferranti 2N4041 ZT280 CV7371 CV7373
Contextual Info: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series
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zt80-zt180100maseries-zt180zt110-zt280+13cv7373cv7644cv7371cv7372zt183zt1842n3866 pin diagramcv77532n4429bfs98ferranti2n4041zt280
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CV7753
Abstract: ZT1701 CV7644 ZT1483 ZT187 CV7371 CV7373 ZT80 ZT83 ZT84
Contextual Info: ZT80-ZT180 Series— Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA The diagram shows the wide range of applications for which the TO-18 encapsulated ZT80 Series-ZT180 Series vCE SAT 0.3
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zt80-zt180100maseries-zt180zt110-zt280+13cv7373cv7644cv7371cv7372zt183zt184cv7753zt1701zt1483zt187zt80zt83zt84
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2N222A
Abstract: ZT1702 N2222 ZT1483 ZT1701 2N2270 equivalent 2n3600 ZT280 ZT1482 CV7373
Contextual Info: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series
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zt80-zt180100maseries-zt180zt110-zt280+15cv7373cv7644cv7371cv7372zt183zt1842n222azt1702n2222zt1483zt17012n2270 equivalent2n3600zt280zt1482
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ZT2120
Abstract: 2N2475 100-C ZT1479 ZT1480 ZT1481 ZT1482 ZT1483 ZT1484 ZT1485
Contextual Info: SILICON TRANSISTORS Power n-p-n Maximum Ratings Type No. v CBO v CEO(sus) Characteristics Dissipation Watts Ic fa Typical R(sat> (max.) hFE Jedec Outline volts volts amps •ZT1479 •ZT1480 •ZT1481 •ZT1482 •ZT1483 •ZT1484 •ZT1485 •ZT1486 •ZT1487
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BCW23
Abstract: BFS98 ZTX107 2N3866 pin diagram 2N4127 2N3707 2N929 BC107 BC108 BCW20
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed
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ztx330ztx331bcw20bcw22+112n37072n929ztx107ztx108ztx1i09bc107bcw23bfs982n3866 pin diagram2n4127bc108
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transistor t2a 82
Abstract: ZT1482 ZT1484 2N2223 t2a transistor ZT1490 n3055 2N3055 TRANSISTOR 2n3055 2N3440
Contextual Info: SILICON TRANSISTORS High Voltage n-p-n The transistors listed in the table below have maximum coliector-emitter voltage ratings of 100 volts or higher and may therefore be used in applications where high voltages are encountered. Further information on these transistors can be found on the page indicated in the last column of the table, or on request from Ferranti Ltd.
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zt1480zt1482zt1484zt1486+11zt1488zt14902n30552n34392n34402n3441transistor t2a 822n2223t2a transistorn3055transistor 2n3055
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ZT1483
Abstract: ZT1701 BCW23 2N929 ZT2120 2N2475 BCW21 2N3707 BC107 BC108
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed
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ztx330ztx331bcw20bcw22+132n37072n929ztx107ztx108ztx1i09bc107zt1483zt1701bcw23zt21202n2475bcw21bc108
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BFS98
Abstract: BSV33 2N2475 2N4127 BFS96 BFS97 ZT180 ZT181 ZT182 ZT183
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 2 5°C amb. mW VCE(sat) ^FE Ic BO at max. volts h min. at >0 mA Outline Draw ing •c mA ■ b mA min. max. -1 5 0 -1 5 0
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N2222
Abstract: 2N222A 2N222 2N222-A 2N2708 2n3600 N222 BFS59 BFS60 BFS61
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n M axim u m Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A B F S 59 B F S 60 BFS61 B FX84 BFX8S B F Y 50 BFY51 B FY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT 8 6 ZT 8 7 ZT88 ZT89
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2N222A
Abstract: N2222 zs90 2N222 BFS61 ZS150 2n3600 BFS59 2N222-A BFX84
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n Maximum Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A BFS59 BFS60 BFS61 BFX84 BFX8S BFY50 BFY51 BFY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT86 ZT87 ZT88 ZT89 ZT90 ZT91 ZT92
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bfs59bfs60bfs61bfs96-98+10bfx84ks77bks78b2n222an2222zs902n222zs1502n36002n222-a
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N2222
Abstract: 2n222 2n222a ZTX326 BFS59 BFS60 BFS61 BFX84 BFY50 BFY51
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n M axim u m Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A B F S 59 B F S 60 BFS61 B FX84 BFX8S B F Y 50 BFY51 B FY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT 8 6 ZT 8 7 ZT88 ZT89
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bfs59bfs60bfs61bfs96-98+12bfx84bfs362n930bfs372n2605bfs36an22222n2222n222aztx326bfy50bfy51
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2n222 TRANSISTOR
Abstract: N2222 2n222a transistor 2n222a 2n222A TRANSISTOR n3055 2n222a npn transistor 2N222-A 2N222 ZT1482
Contextual Info: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.
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zt1480zt1482zt1484zt1486+15zt1488zt14902n30552n34392n34402n34412n222 transistorn22222n222atransistor 2n222a2n222a transistorn30552n222a npn transistor2n222-a2n222
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2SC2412AK
Contextual Info: UMS2N / UMT2N / FMS2A / IMT2A / IMT3A Transistors UMW2N / UMX2N / UMX3N / FMW2 / IMX2 / IMX3 I General Purpose Dual Transistors UMS2N / UMT2N / FMS2A / IMT2A / IMT3A •Features 1 ) Two 2SA1037AK chips are housed in a UMT or SMT package •A b s o lu te maximum ratings (Ta=25’C )
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ST C732
Abstract: SE370C758B induction cooker circuit diagram diode c722 st u c756 TMS 370 BP-1148TI turpro 840 manual TMS370 Microcontroller Family Users Guide SE370C712A
Contextual Info: TMS370 Microcontroller Family Extract Data Book 1997 8-Bit Microcontroller Family Printed in U.S.A., March 1997 SPND005 General Information 1 Quality and Reliability 2 Electrostatic Discharge Guidelines 3 Mechanical Data 4 TMS370 Microcontroller Family Data Book
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tms370spnd00564-pinr-pdip-t64+10st c732se370c758binduction cooker circuit diagramdiode c722 stu c756tms 370bp-1148titurpro 840 manualtms370 microcontroller family users guidese370c712a
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2n222a
Abstract: ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132 ZT1482
Contextual Info: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.
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half-bridge power supply
Abstract: SEM-800 Application Note U-97 balancing switching transformer winding spice TRANSFORMER simulation t1b diode 81CH1652-7 SEM-400 transformer winding datasheet
Contextual Info: November 2002 Application Note 7531 Implementing A Primary Side Peak-Current-Mode Half-Bridge Converter Alain Laprade Jon Gladish Fairchild Semiconductor Corp 125 Crestwood Rd Mountain Top, PA US 18707 Ian Edward Victor Reginato EMS Technologies 21025 Trans Canada Highway
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half-bridge power supplysem-800application note u-97balancing+6switching transformer windingspice transformer simulationt1b diode81ch1652-7sem-400transformer winding datasheet
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T17B
Abstract: intel 24022
Contextual Info: intei lntel387TM SX MATH COPROCESSOR The ambient temperature 0 a is guaranteed as long as Tc is not violated. The ambient temperature can be calculated from the 0 jc thermal resistance con stant from the transistor junction to the case) and 0 j a (thermal resistance from junction to ambient)
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intel38768-pinlntel387tmintel387tm+2t17bintel 24022
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C2785
Abstract: transistor B1202 transistor c2785 c2785 transistor transistor a1175 a1175 transistor M9-1-473J M9-1-332J MD910 printer mechanism TC74HC14P
Contextual Info: Service Manual DOT MATRIX PRINTER MODEL iDP3110 Rev. 1.00 Newly issued on Oct, 1994 iDP3110 Service Manual REVISION Rev.No. Rev.1.00 Date Oct 1994 Comment Newly issued CITIZEN iDP3110 Service Manual Contents 1. How to remove the Upper Cover. 1
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idp3110pst520epst600e1s1588+1447k-874hc373cbm-909pc-2dc-0608c2785transistor b1202transistor c2785c2785 transistortransistor a1175a1175 transistorm9-1-473jm9-1-332jmd910 printer mechanismtc74hc14p
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