T0 16 Search Results

Contextual Info: Assortments of Metal Glaze Film Resistors Available are: Technical data s. page 30 ff Order No. Type/TC/ Tolerance Series Sort-11 Sort-12 Sort-13 Sort-14 515-0/T0/2% 515-0/T0/2% 515-0/T0/2% 515-0/T0/2% E24 E24 E24 E12 Sort-16 Sort-17 Sort-18 Sort-19 Sort-93

Contextual Info: This N-Channel Power MOSFETs z > Material National COOLFETsTM Semiconductor Copyrighted Case Style Pd W Tc = 25°C V D SS (V) Min l0 @ Tc = 25°C (A) Tc = 100°C (A) IRF350CF T0-204AE (42) T0-3P (43) T0-3P (43) TO-204AE (42) TO-3P (43) T0-3P (43) 150 400

Contextual Info: REV DESCRIPTION DATE APPROVED SEE SHEET #1. TO—5 PART NO. TO—5 TO— 6 T0-9 10-13 .225 .250 .300 .225 I.D. 5.7mm 6.4mm 7.8mm 5.7mm .375 .375 .437 .310 O.D. 9.5mm 9.5mm) 11.1mm 7.9mm) TO-18 PART NO. TO-12 TO— 16 T0-17 T0-18 TO—20 TO—27 .125 .125

1ALF

Contextual Info: HER161PT TSC S thru HER167PT 16.0 AMPS. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE 50 tc 800 V olts CURRENT 16.0 A-poros T0-3P/T0-247AD FEATURES * Dual rectifier construction, positive center-tap * Plastic package has Underwriters Laboratory

DSP56156

Abstract: MC68000 PB12 SC10-11
Contextual Info: Pin Descriptions Address and Data Bus Bus Control Pin Descriptions t0, t1, t2, t3 , R/W goes high in t0. R/W is three-stated during hardware reset. Address and Data Bus A0-A15 (Address Bus) — three-state, active high outputs. A0-A15 change in t0 and specify the address for external program and data memory accesses. If

TC74HC4514P

Abstract: TC74HC4515 i.c. cmos 4514b TC74HC4515P N203
Contextual Info: TC74HC4514P TC74HC4515P TC74HC4514P 4-T0-16 LINE DECODER/LATCH TC74HC4515P 4-T0-16 LINE DECODER/LATCH INV. The TC74HC4514 and TC74HC4515 are high speed CMOS 4-LINE TO 16-LINE DECODER WITH LATCHED INPUTS fabricated with silicon gate C MOS technology. It achieves the high

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL TS S E MI CON DU CT OR DE^BilflSiD 95D 02091 7133-07 -r-'ìò-ch Ic = 3.0 AMPS DEVICE TYPE BVce0 PACKAGE VOUS 2N1647 2N1648 2N1649 2N1650 2N2101 TO-111 TO-111 TO-111 TO-111 TO-61 T0-5/S TO-5 T0-5/S TO-5 TO-59 T0-5/S TO-5

Schottky Diode 40V 6A

Abstract: ST Low Forward Voltage Schottky Diode F16K F16KQ30S F16KQ30SB F16KQ40S F16KQ40SB
Contextual Info: SCHOTTKY BARRIER DIODE F16KQ30S F16KQ40S F16KQ30SB F16KQ40SB 16.6A/30~ 40V FEATURES ° Similar to T0-220AC and T0-220AB Case Fully Molded Isolation ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability 0 30 Volts through 100 Volts Types

Rotary Switches

Abstract: D17-1
Contextual Info: 07/099 Moeller HPL0211-2001/2002 T0, T3 Rotary Switches Dimensions Surface mounting T0./I1 Drilling dimensions Base 33.5 c25 80 127 120 137 M20 27 T3./I2 Drilling dimensions Base M4 35.5 L-. 171 ∅8 180 160 M25 c25 100 c33 Surface mounting main switches

2SK1778

Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
Contextual Info: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247

94v0

Abstract: type 94v-0 94-V0 E24E96E192 94v-0 5 94v-0
Contextual Info: General Product Information Temperature Coefficient Codes SEI TC Code MIL TC Code Industry Std TC Code Temperature Coefficient Temperature Span T0 N/A T0 ±200ppm/°C -55°C to + 150°C T1 D T1 ±100ppm/°C -55°C to + 165°C T2 C T2 ±50ppm/°C -55°C to + 175°C

A1306 TRANSISTOR

Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Contextual Info: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)

diode AE 26A

Abstract: IRH3250 IRH4250 IRH7250 IRH8250
Contextual Info: PD - 90697D RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AA/AE (T0-204AA/AE IRH7250 200V, N-CHANNEL ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7250 IRH3250 IRH4250 IRH8250 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si)

Contextual Info: STP16NE06 STP16NE06FP N - CHANNEL 60V - 0.08 £2 - 1 6A - T0-220/T0-220FP _STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss RDS on Id STP 16N E06 S TP 16N E06FP 60 V 60 V < 0.100 a < 0.100 a 16 A 11 A • . . . . . TYPICAL R D S ( o n ) = 0.08 Î2

HITACHI 5C

Contextual Info: HRW1002A L Silicon Schottky Barrier Diode for Rectifying HITACHI ADE-208-240B(Z) Rev 2 Oct. 1997 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Same power as T0-220AB. • Small outline compared with T0-220AB. Ordering Information

irf540 TTL

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

Contextual Info: HEF4731B HEF4731V LSI QUADRUPLE 64-BIT STATIC SHIFT REGISTER The HEF4731B and HEF4731V are quadruple 64-bit static shift registers each with separate serial data inputs D/^ to D q , clock inputs (CP a t0 CP d ) and data outputs (063A t0 C>63d ) from the 64th

Contextual Info: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T C 4 5 1 4 B P , T C 4 5 1 5 B TC4514BP 4-BIT LATCH/4-T0-16 LINE DECODER Output Active High Option TC4515BP 4-BIT LATCH/4-T0-16 LINE DECODER (Output Active Low Option) TC4514BP and TC4515BP are decoders which convert 4

10N15

Abstract: 10N12 rfm10n rfp10n12
Contextual Info: 2 HARRIS RFM10N12/10N15 RFP10N12/10N15 N-Channel Enhancement Mode Power Field Effect Transistors ugust 1991 Features Packages T0-204AA • 10A, 120V and 150V T0 2 • rDS on = 0.3ft • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

VN88AF

Abstract: VN89AF VN66AD VN67AD VN88AF SILICONIX VN46AF VN66AF 2N6657 VN0401D IRF622
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

mospower cross vn66af

Abstract: VN88AF CROSS REFERENCE VN99AB OLS 049 2SJ54 sony IRF542 2N6658 CROSS REFERENCE 2n6661 VN0209N2 VN88
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

Equivalent IRF 44

Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

VN99AB

Abstract: VN66AF 2N6658 VN46AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150

irf540 equivalent

Abstract: IRF541 equivalent vn89af equivalent IRF540 irf640 vn0106n1 VN0109n5 IRFF121 IRF232 IRF422
Contextual Info: Siliconix 1-1? f l Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170