T0 16 Search Results

smd diode E7

Abstract: sch550 SCH360 gp20 diode T0-220CT MBR2 SCH530
Contextual Info: GENL I N S T R / POLIER 2 SE D • 30^0137 G0 D3 3 E7 fi SCHOTTKY RECTIFIERS continued B (A) PKG T Y P E 16 20 T0-3P T0-220CT 30 T0-220CT T0-3P "ì i f VRRM [volts) i l l 20 30 MBR2035CT 35 40 SBL3030PT SBL1630PT MBR3035PT SBL3040PT SB L1640PT MBR2045CT

Contextual Info: Assortments of Metal Glaze Film Resistors Available are: Technical data s. page 30 ff Order No. Type/TC/ Tolerance Series Sort-11 Sort-12 Sort-13 Sort-14 515-0/T0/2% 515-0/T0/2% 515-0/T0/2% 515-0/T0/2% E24 E24 E24 E12 Sort-16 Sort-17 Sort-18 Sort-19 Sort-93

Contextual Info: This N-Channel Power MOSFETs z > Material National COOLFETsTM Semiconductor Copyrighted Case Style Pd W Tc = 25°C V D SS (V) Min l0 @ Tc = 25°C (A) Tc = 100°C (A) IRF350CF T0-204AE (42) T0-3P (43) T0-3P (43) TO-204AE (42) TO-3P (43) T0-3P (43) 150 400

Contextual Info: REV DESCRIPTION DATE APPROVED SEE SHEET #1. TO—5 PART NO. TO—5 TO— 6 T0-9 10-13 .225 .250 .300 .225 I.D. 5.7mm 6.4mm 7.8mm 5.7mm .375 .375 .437 .310 O.D. 9.5mm 9.5mm) 11.1mm 7.9mm) TO-18 PART NO. TO-12 TO— 16 T0-17 T0-18 TO—20 TO—27 .125 .125

64TI

Contextual Info: A r -A r 28 6 8.5 8tO .25 7 l.5 8 t0 .2 5 TYP 2.54 CENTRES 27 6 6 .0 4 i0 .2 5 6 9 .0 4 tO .2 5 26 6 3 .5 0 t0 .2 5 6 6 .5 0 t0 .2 5 25 6 0 .9 6 t0 .2 5 6 3.9 6tO .25 24 5 8 .4 2 t0 .2 5 6 l.4 2 tO .2 5 23 5 5.8 8tO .25 58.88tO .25 LOCKING FEATURE OPTIONAL

1ALF

Contextual Info: HER161PT TSC S thru HER167PT 16.0 AMPS. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE 50 tc 800 V olts CURRENT 16.0 A-poros T0-3P/T0-247AD FEATURES * Dual rectifier construction, positive center-tap * Plastic package has Underwriters Laboratory

c2314

Abstract: c3807 C3502 a1249 C3953 C3117 transistor c3807 c3116 d826 b1127
Contextual Info: S4PfVO X O — 1 2£> O :T0-126ML, *:T0-126LP, Unmarked :T0-126. \ \ Type T r a n s i s t o r s ♦¡D arlington V CEO I \ V C \ (mA) \ 18 2 0 2 5 3 5 4 5 5 0 7 0 6 0 8 0 10 0 12 0 16 0 A1404 A15380 C3598 <39530 200 A1723 C4271 C4660O A1402 C3596 A15360

Contextual Info: F16KQ90S F16KQ100S F16KQ90SB F16KQ100SB 16.6A/90~100V SCHOTTKY BARRIER DIODE 3.11.122 MAX FEATURES 4.8U89) •MAX l-_L0.3 .405)_-. MAX / " 3.01.118} °Similar to T0-220AC and T0-*220AB Case Fully Molded Isolation f 6.9(.272) 6.31.248) 6,9(,272) 6.3Î.248)

DSP56156

Abstract: MC68000 PB12 SC10-11
Contextual Info: Pin Descriptions Address and Data Bus Bus Control Pin Descriptions t0, t1, t2, t3 , R/W goes high in t0. R/W is three-stated during hardware reset. Address and Data Bus A0-A15 (Address Bus) — three-state, active high outputs. A0-A15 change in t0 and specify the address for external program and data memory accesses. If

4T016

Abstract: TC4514 TC4514BP TC4515BP TC45 HS15H
Contextual Info: TC4514BP, TC4515BP TC4514BP TC4515BP C 2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4-BIT LATCH/4-T0-16 LINE DECODER Output Active High Option 4-BIT LATCH/4-T0-16 LINE DECODER (Output Active Low Option) TC4514BP and TC4515BP are decoders which convert 4

TC74HC4514P

Abstract: TC74HC4515 i.c. cmos 4514b TC74HC4515P N203
Contextual Info: TC74HC4514P TC74HC4515P TC74HC4514P 4-T0-16 LINE DECODER/LATCH TC74HC4515P 4-T0-16 LINE DECODER/LATCH INV. The TC74HC4514 and TC74HC4515 are high speed CMOS 4-LINE TO 16-LINE DECODER WITH LATCHED INPUTS fabricated with silicon gate C MOS technology. It achieves the high

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL TS S E MI CON DU CT OR DE^BilflSiD 95D 02091 7133-07 -r-'ìò-ch Ic = 3.0 AMPS DEVICE TYPE BVce0 PACKAGE VOUS 2N1647 2N1648 2N1649 2N1650 2N2101 TO-111 TO-111 TO-111 TO-111 TO-61 T0-5/S TO-5 T0-5/S TO-5 TO-59 T0-5/S TO-5

Schottky Diode 40V 6A

Abstract: ST Low Forward Voltage Schottky Diode F16K F16KQ30S F16KQ30SB F16KQ40S F16KQ40SB
Contextual Info: SCHOTTKY BARRIER DIODE F16KQ30S F16KQ40S F16KQ30SB F16KQ40SB 16.6A/30~ 40V FEATURES ° Similar to T0-220AC and T0-220AB Case Fully Molded Isolation ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability 0 30 Volts through 100 Volts Types

Rotary Switches

Abstract: D17-1
Contextual Info: 07/099 Moeller HPL0211-2001/2002 T0, T3 Rotary Switches Dimensions Surface mounting T0./I1 Drilling dimensions Base 33.5 c25 80 127 120 137 M20 27 T3./I2 Drilling dimensions Base M4 35.5 L-. 171 ∅8 180 160 M25 c25 100 c33 Surface mounting main switches

94v0

Abstract: type 94v-0 94-V0 E24E96E192 94v-0 5 94v-0
Contextual Info: General Product Information Temperature Coefficient Codes SEI TC Code MIL TC Code Industry Std TC Code Temperature Coefficient Temperature Span T0 N/A T0 ±200ppm/°C -55°C to + 150°C T1 D T1 ±100ppm/°C -55°C to + 165°C T2 C T2 ±50ppm/°C -55°C to + 175°C

Contextual Info: SCHOTTKY BARRIER DIODE F16KQ50S F16KQ60S F16KQ50SB F16KQ60SB 16.6A/50— 60V 1 1 . 122 MAX FEATURES _10.3i.405) M AX " /an»1 4 .8 (1 8 9 ) I* M A X ° Similar to T0-220AC and T0-220AB Case Fully Molded Isolation 6 .% 272 ) & 6 .9(.272) 6 .3(.248) 15.4('.606)

A1306 TRANSISTOR

Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Contextual Info: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)

Contextual Info: General Product Information Temperature Coefficient Codes SEI TC Code MIL TC Code Industry Std TC Code Temperature Coefficient Temperature Span T00 N/A T00 ±200ppm/°C -55°C to + 150°C T0 N/A T0 ±150ppm/°C -55°C to + 165°C T1 D T1 ±100ppm/°C -55°C to + 165°C

diode AE 26A

Abstract: IRH3250 IRH4250 IRH7250 IRH8250
Contextual Info: PD - 90697D RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AA/AE (T0-204AA/AE IRH7250 200V, N-CHANNEL ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7250 IRH3250 IRH4250 IRH8250 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si)

Contextual Info: STP16NE06 STP16NE06FP N - CHANNEL 60V - 0.08 £2 - 1 6A - T0-220/T0-220FP _STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss RDS on Id STP 16N E06 S TP 16N E06FP 60 V 60 V < 0.100 a < 0.100 a 16 A 11 A • . . . . . TYPICAL R D S ( o n ) = 0.08 Î2

Contextual Info: Type No. IRF232 IRF630 IRF631 IRF632 IRF633 9-16 2N6759 2N6760 IRF330 IRF331 IRF333 IRF730 IRF731 TO-204AA 42 T 02 04A A (42) TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) 70220 (37) T0204AA (42) TO-204AA (42) T 02 04A A (42) T0-204AA (42)

80C51

Contextual Info: ,,,  INT0 INT1 T0 T1 PSEN RD ALE WR EA AVref+ AVSS AN0 to 5 PWM0 PWM1 10-Bit ADC PWM RXD TXD 80C51 CONFIGURABLE CORE CPU CORE TWO 16-BIT TIMER/EVENT COUNTERS T0/T1 16 KBYTES PROGRAM MEMORY 512 BYTES UART DATA MEMORY P8xC591 VDD VSS XTAL1 OSCILLATOR

HITACHI 5C

Contextual Info: HRW1002A L Silicon Schottky Barrier Diode for Rectifying HITACHI ADE-208-240B(Z) Rev 2 Oct. 1997 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Same power as T0-220AB. • Small outline compared with T0-220AB. Ordering Information

BC309 equivalent

Abstract: st 393 8-pin T0-226AE
Contextual Info: MOTOROLA SC XSTRS/R F MbE D • b3b?2S4 Oa'Obll b ■MOTb SMALL-SIGNAL BIPOLAR TRANSISTORS — PLASTIC-ENCAPSULATED TRANSISTORS (continued) 7 ^ jZ 7 - Cs5 Table 1. Plastic-Encapsulated General-Purpose Transistors (continued) Case 29-03 — T0-226AE (1-WATT T0-92)