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    SUS 433 Search Results

    SUS 433 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA1046

    Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275


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    2n62742n62752n62772n6377+11power32tip73btip742sa10462n6275 equivalentbu108tr tip2955motorola 2n6277bu806 complementbu326bu100 PDF

    2SC124

    Abstract: BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 80 Vdc (Min) — 2N6436


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    2n64362n64372n64382n6338+112n6341devi32tip73b2sc124bu1082sa1046bdx542sc102bc 458bu326bu100 PDF

    Motorola case 77

    Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc


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    mje200mje210tip73btip74+13tip74atip74btip75tip75atip75btip75cmotorola case 772n3055bu1082sc15bdw93c applicationsbu326bu100 PDF

    MJE34 equivalent

    Abstract: BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 60 Vdc (Min) — 2N5879, 2N5881


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    2n58792n58812n58802n5882+10tip73btip74mje34 equivalentbu1082sa1046bdx54bc 107 npn transistor pin configuration2sb56bu326bu100 PDF

    equivalent to tip162

    Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338


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    2n63382n63392n63402n6341+162n6436continu32tip73btip74tip74atip74bequivalent to tip1622sa10462n3055bu1082n6258bu326bu100bd262buv232n5632 PDF

    ST T4 3580

    Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc


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    mjd243tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488st t4 3580bu108bdw93c applicationstransistor bd136 in dpak packaging2sc103ir411transistor bc 384bdx542sb56ic 714 PDF

    Contextual Info: , Una, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlingtion Power Transistor PMD16K80 DESCRIPTION • High DC current gain • Collector-Emitter Sustaining VoltageVcEO(sus)= SOV(Min)


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    pmd16k80pmd17k80100ma PDF

    Contextual Info: IBM2520L8767 Preliminary ATM Resource Manager Features other uses DRAM devices. A single array of memory can be used in systems whose sus­ tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications. • Configurable for sustained performance of up to


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    ibm2520l8767102mb/s400mb/schapt07 PDF

    Contextual Info: IBM2520L8767 IBM Processor for ATM Resources Features pendent: one can use SRAM devices while the other uses DRAM devices. A single array of memory can be used in systems whose sus­ tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications.


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    ibm2520l8767102mb/s400mb/schapt07 PDF

    2n3054

    Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
    Contextual Info: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c ­ to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include


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    edi358ta7557ta7611ta7612+15ta7639ta7640ta7719ta7739ta7740ta77412n3054rca transistor 40410rca 403102n2870rca 40636 transistortransistor 404102n23382n24052n2147 PDF

    UZF4115

    Abstract: UZF411 A6061-T6 uzfxmr1 UZFXMR2 COPPER C3604 UZFTNB8 UZFTP8 M1021 UZFRV41
    Contextual Info: UZF41/42/43 series 0.6.10 13:16 Page 1 NEW OPTICAL FIBER DIGITAL/AUTO/MANUAL SETTING TYPE PHOTOELECTRIC SENSORS UZF41/42/43 Series SIMPLE OPERATION WITH INNOVATIVE JOG SWITCH SETTING AND MANUAL SETTING TYPE Simple Operation UZF41/42 series Uses an innovative highly operable jog


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    uzf41/42/43uzf41/42uzf42uzf43+1112-turnuzf4115uzf411a6061-t6uzfxmr1uzfxmr2copper c3604uzftnb8uzftp8m1021uzfrv41 PDF

    dot matrix printer circuit diagram datasheet

    Abstract: HA13408 dot matrix printer Hitachi DSA00231 HA-13408 hitachi feeder
    Contextual Info: HA13408 9-Channel Power Driver ADE-207-206 Z 1st Edition July 1996 Description The HA13408 9-channel power driver IC is designed to drive dot matrix printer head. This IC can drive 9 pins without using any external components. HA13408 can be used for 2 system four-phase step drive, as


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    ha13408ade-207-206dot matrix printer circuit diagram datasheetdot matrix printer+3hitachi dsa00231ha-13408hitachi feeder PDF

    4332 transistors

    Abstract: D16430
    Contextual Info: DATA SHEET SILICON POWER TRANSISTORS 2SC4332, 4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors developed PACKAGE DRAWINGS Unit: mm 1.5 −0.1 +0.2 for high-speed switching and features a very low collector-to-emitter


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    2sc43324332-z2sc4332-z4332 transistors+1d16430 PDF

    TA8724

    Abstract: 2N6247 RCA-2N6246 2N6246 2N6248 clare mercury RCA 2N6246 RC 4565 TA7279 TA7280
    Contextual Info: G E SOLID 3875081 D Ìf| 3 0 7 S 0 Ô1 DÏ STATE G Ë SOL I D ST ATE " _ 01E 17427 DD17 4 5 7 D 7< General-Purpose Power Transistors File N u m b é r 677 2N6246, 2N6247, 2N6248, 2N6469 TERMINAL DESIGNATIONS


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    307s00d174e72n62462n6247+92n62482n6469rca-2n6246ta8724clare mercuryrca 2n6246rc 4565ta7279ta7280 PDF

    CS 213 Polymer protection

    Abstract: CS 213 Polymer 39-29-3046 MAX6590 MAX1544 irf 343 so-8 Multimeter tektronix dmm 157 IRF 548 C71-C78 100w amp sanyo
    Contextual Info: MAXIM 19-2870; Rev 0; 04/03 MAX1544/MAX1545 MAX1544/MAX1545 Evaluation Kits Pentium is a registered trademark of Intel Corp. Hammer is a trademark of Advanced Micro Devices, Inc. QuickPWM is a trademark of Maxim Integrated Products, Inc. Features


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    max1544/max1545max1980cs 213 polymer protectioncs 213 polymer+839-29-3046max6590max1544irf 343 so-8multimeter tektronix dmm 157irf 548c71-c78100w amp sanyo PDF

    QFS25U

    Abstract: 300-500VDC QAS60-50 Airpax relay QAS60 SAR-F-1 QAS60-75 QAS25-50 arc welder inverter 0116 solar
    Contextual Info: Other Products SAR & SAS Circuit Protectors 280 QAS, QAL, QFS, QFL Quick-Action Fuses 282 HVS & SARPV Compact Switches for 284 Solar Power Applications SAR & SAS Circuit Protectors Applications: Typical applications include tight spaces in radio signal amplifiers for base transceiver stations, uninterruptible power supplies,


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    dc24v24vdcsarpv-f-40qfs25u+9300-500vdcqas60-50airpax relayqas60sar-f-1qas60-75qas25-50arc welder inverter0116 solar PDF

    2sc431

    Abstract: 2SC1466 2sc146 2SC407 H150 T10M36 T10M40 T13M T30M36 T30M40
    Contextual Info: POWER TRANSISTORS SHINDENGEN ELECTRIC MF6 •, Jü": M.a DQ Type No. No. VCBO VCEO V ebo [V ] [V ] 150 100 2SC 407 408 409 200 T7M 41OA 300 412 2SC431 ISO 432 433 T13M 200 434A 300 436 450 360 1467 T 3 M 40 500 400 1468 T10M 36 450 360 T10M 40 500 1469A T30M 36


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    2n3072sc4072sc2126at3m20+15t10m20t30m202sc3703t30r2002qhax2-04m2sc4312sc14662sc146h150t10m36t10m40t13mt30m36t30m40 PDF

    HKW0820

    Abstract: rotary encoder sharp 73 HSW2032-510069 HKW0731-010010 HSW2022-010029 HSW2023-010029 HSW4512-310011 Slide Switch 2p3t HSW2022 hosiden
    Contextual Info: SWI05 Switches Contents Contents . 1 Slide Switches Notice . 2 Product Lineup . 3


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    swi05hkw0820rotary encoder sharp 73hsw2032-510069+7hkw0731-010010hsw2022-010029hsw2023-010029hsw4512-310011slide switch 2p3thsw2022hosiden PDF

    MJE520

    Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
    Contextual Info: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic


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    -204aa-204aet0-204a97a-02+16o-205adbus51buv21buv112n6249bux41mje520bd189sc 6038mje12007motorola 527 33amj4647mje13006bd 433npnto-126je105mps-u PDF

    tic 1260 scr texas

    Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
    Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.


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    tic 1260 scr texasta72652n6874ta7719+62n6058rca 40408 transistor2n2405bd643bd647 equivalent2n3228 PDF

    NTE2584

    Abstract: npn 10a 800v
    Contextual Info: NTE2584 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


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    nte2584npn 10a 800v PDF

    ked2

    Contextual Info: POIilEREX INC m M U iE K 31E J> • TE^MbSl b W M PRX DGQM3bb KED235A1 - Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 .


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    ked235a1bp107amperes/500ked2 PDF

    IR 436

    Abstract: bf 434 amplificateur FT 434 512-BD deflexion vertical tv deflexion BD436
    Contextual Info: BD 434 BD 436 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS S IL IC IU M PNP, BASE E P ITAXIES Compì, of BD 433, 435 PR E LIM IN A R Y DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­


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    ir 436bf 434amplificateurft 434+4512-bddeflexionvertical tv deflexionbd436 PDF

    2SA1046

    Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.


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    2n6251tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sa10462n3055bu108transistor k 3596bu326bu100tl mje2955tmje3055t2n31742sc936 PDF