SUNG Search Results

VP12

Abstract: 100082 SMP-10008-2 rf attenuator soic f0035
Contextual Info: SMP-10008-2 ELECTRONICS Volt3C|G VflNSblG A tte n u a to r Sam sung M ic ro w a v e S e m ic o n d u c to r DC - 8 GHz Description Features The SMP-10008-2 is a high performance Gallium Arsenide GaAs Monolithic Microwave Integrated Circuit MMIC) housed in a low-cost Small Outline Integrated Circuit

8512A

Abstract: A12C A15C KM68512A KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND
Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM 68512A fam ily is fabricated by SAM SUNG'S advanced CM O S process technology. The fam ily can support various operating tem perature ragnges

KM428C257

Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
Contextual Info: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual

KMM377S2857AT2-GH

Abstract: KMM377S2857AT2-GL
Contextual Info: Preliminary KMM377S2857AT2 SDRAM MODULE K M M 377S2857AT2 SDRAM DIMM Intel 1.1 ver. Base 128M x72 SDR AM DIMM w ith PLL & R egister based on Stacked 128Mx4, 4B anks 8K Ref., 3.3V S D R A M s w ith SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 377S2857AT2 is a 128M bit x 72 S yn ­

Contextual Info: 2/8 TAI-SAW TECHNOLOGY CO., LTD. Crystal Unit SMD 3.2x2.5 12.00MHz MODEL NO.: TZ2237A REV. NO.: 1 Revise: Rev. Rev. Page Rev. Account Date 1 N/A Initial release 6/22/11’ N/A TAI-SAW TECHNOLOGY CO., LTD. Ref. No. Revised by Sam Sung TST DCC Release document

46141

Abstract: 4614
Contextual Info: OUÏHJI TRIODE TRIODE SE SORTIE ENDIRIODE Heatings indirect by A.C.; parallel supply Chauffage: indirect par C.A.; alimentation en parallèle Heizung: indirekt durch Wechselstrom: Parallelspei sung , mut46 f. Dimensions in mm Dimensions en mm sungen in mm

km416c1200j

Abstract: km416c1200 MAS 10 RCD 71FC
Contextual Info: SUNG ELECTRONICS INC b?E ]> • 7Tmi4E D01b3ña 731 SMGK CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynam ic Random A ccess Memory. Its

650nm 5mw laser module

Abstract: 650NM laser diode 5mw QL65D6SA QSI 650 QL65
Contextual Info: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D6SA Signature of Approval Approvaed by Checked by Issued by Approval by Customer 315-9, Chunheung-ri, Sungger-eup, Chunan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65D6SA InGaAlP Laser Diode

Contextual Info: CMOS DRAM KM49C512/L/SL 5 1 2 K x 9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM49C512/L/SL is a CMOS high speed 524,288 b i t x 9 D ynam ic Random A ccess Memory. Its design is op tim ized fo r high pe rform ance ap p lica tio n s

Contextual Info: Preliminary KMM466S824CT2_ 144pin SDRAM SODIMM KMM466S824CT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION T he Sam sung K M M 466S 824C T2 is a 8M bit x 64 S ynchronous

Contextual Info: Preliminary KMM466S823BT2_144pin SDRAM SODIMM KMM466S823BT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION Perform ance range The Sam sung KM M 466S823BT2 is a 8M bit x 64 Synchronous

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E » • 7^4142 0 D 1 S 47 7 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM44C256CL is a CMOS high speed 262,144 x 4 D ynam ic Random A ccess M em ory. Its

Contextual Info: KMM372V400AK/AS DRAM MODULE KMM372V400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung K M M 372V 400A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372V400A - 6

Contextual Info: DRAM MODULE KM M372C225AJ KMM372C225AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KMM372C225A is a 2M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C225A - 6 KMM372C225A - 7

KM418C256/L/SL-7

Contextual Info: SUNG ELECTRONICS INC bME D KM418C256/L/SL • 7 T b 4 m 2 GGlBMTb 12=5 « S U G K CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM418C256/L/SL is a C MOS high speed 262,144 b it x 18 D ynam ic Random A ccess M em ory. Its

Contextual Info: DRAM MODULE KM M 372V 125AJ 1M x72 D R A M KMM372V125AJ Fast Page M ode D IM M w ith Q C A S , 1 K R e fr e s h , GENERAL DESCRIPTION 3 .3 V FEATURES • Performance Range: The Sam sung K M M 372V 125A is a 1M bit x 72 D ynam ic RAM high density m em ory module. The

KMM536256

Contextual Info: KMM536256B DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The sung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam­ sung KM M 536256B consist ot eight CMOS 2 5 6 K X 4

Contextual Info: CMOS DRAM KM418C256LL 256K x18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM418C256LL is a CMOS high speed 262,144 b it x 18 D ynam ic Random A cce ss M em ory. Its de sig n is o p tim ized fo r high perform ance ap p lica tio n s

Contextual Info: PRELIMINARY KM64258E CMOS SRAM Document Tills 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial draft Draft Data Aug. 1 .1 9 9 8 Remark Preliminary The attached data sheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right

Contextual Info: CMOS DRAM KM41C258 256Kx 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM41C258 is a CMOS high speed 262,144 bit x 1 D ynam ic Random A ccess Mem ory. Its design is op tim ized fo r high perform ance ap p lica tio n s

Contextual Info: KM44C4110A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung K M 44 C 4 110 A /A L/A LL /A S L is a high speed C M O S 4 ,1 9 4 ,3 0 4 b i t x 4 D ynam ic R andom

Contextual Info: KMM372C412AK/A S DRAM MODULE KMM372C412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372C412A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C412A - 5

Contextual Info: Preliminary PC100 SDRAM MODULE KMM374S1623BT KMM374S1623BT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 374S 1623BT is a 16M bit x 72 Synchronous • Perform ance range

Contextual Info: Preliminary KMM377S3227BT2 SDRAM MODULE KMM377S3227BT2 SDRAM DIMM Intel 1.1 ver. Base 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION • Perform ance range The Sam sung KM M 377S3227BT2 is a 32M bit x 72 S ynchro­