KMM374S1623BT Search Results
KMM374S1623BT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PC66 SDRAM MODULE KMM374S1623BTL Revision History Revision .3 March 1998 Som e Param eter value s & C haracteristics of com p, level are changed as below : - Input leakage currents (Inputs) : ± 5 u A to ±1uA. - Input leakage currents (I/O) : ± 5 u A to ± 1 ,5uA. |
OCR Scan |
kmm374s1623btlkm48s8030bt | |
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Contextual Info: Preliminary PC100 SDRAM MODULE KMM374S1623BT KMM374S1623BT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 374S 1623BT is a 16M bit x 72 Synchronous • Perform ance range |
OCR Scan |
pc100kmm374s1623bt16mx721623bt+4 | |
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Contextual Info: KMM374S1623BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV. |
Original |
kmm374s1623btpc100118dia000dia+4 | |
374S1623BTLContextual Info: Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL_ Revision History Revision .l November 1997 This spec has changed in accordance with New Binning [s F ' ELECTROftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL KMM374S1623BTL SDRAM DIMM |
OCR Scan |
kmm374s1623btl_kmm374s1623btl16mx72374s1623btl+4 | |
KMM374S1623BTL
Abstract: KMM374S1623BTL-G0
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OCR Scan |
kmm374s1623btl16mx72400mil168-pin+2 | |
KMM374S1623BT-G8
Abstract: KMM374S1623BT-GH KMM374S1623BT-GL
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Original |
kmm374s1623btpc100100mhzkmm374s1623bt-g8+2 | |
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Contextual Info: Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL_ Revision History Revision ,l November 1997 This spec has changed in accordance with New Binning - ELECTRONICS 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL KMM374S1623BTL SDRAM DIMM |
OCR Scan |
kmm374s1623btl_kmm374s1623btl16mx72374s1623btl+4 | |
KMM374S1623BT-GL
Abstract: KMM374S1623BT-G8 KMM374S1623BT-GH
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OCR Scan |
kmm374s1623btpc100kmm374s1623bt-glkmm374s1623bt-g8+1 | |
KM48S8030BT-G10
Abstract: KMM374S1623BTL-G0
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Original |
kmm374s1623btl200mv66mhzkm48s8030bt-g10+1 | |
KMM374S1623BT-GLContextual Info: KMM374S1623BT PC100 SDRAM MODULE KMM374S1623BT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1623BT is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung |
OCR Scan |
kmm374s1623btpc10016mx72400mil+2 | |
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Contextual Info: PC100 SDRAM MODULE KMM374S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : + 5 u A to ± 1 u A , - Cin to be measured at V dd I il (DQ) : + 5 u A to ± 1.5uA. = 3.3V, T a = 23°C , f = 1 MHz, V |
OCR Scan |
kmm374s1623btpc100150maxkm48s8030bt | |
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Contextual Info: KMM374S1 623BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V |
OCR Scan |
kmm374s1623btpc100150max+1 | |
KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
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OCR Scan |
km44s4020ctkm48s2020ctkm416s1020ctkm416s1021ct+12 |