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    KMM374S1623BT Search Results

    KMM374S1623BT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PC66 SDRAM MODULE KMM374S1623BTL Revision History Revision .3 March 1998 Som e Param eter value s & C haracteristics of com p, level are changed as below : - Input leakage currents (Inputs) : ± 5 u A to ±1uA. - Input leakage currents (I/O) : ± 5 u A to ± 1 ,5uA.


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    kmm374s1623btlkm48s8030bt PDF

    Contextual Info: Preliminary PC100 SDRAM MODULE KMM374S1623BT KMM374S1623BT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 374S 1623BT is a 16M bit x 72 Synchronous • Perform ance range


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    pc100kmm374s1623bt16mx721623bt+4374s1623bt-g125mhz374s1623bt-gh100mhz PDF

    Contextual Info: KMM374S1623BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.


    Original
    kmm374s1623btpc100118dia000dia+4150max81max010maxkm48s8030bt PDF

    374S1623BTL

    Contextual Info: Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL_ Revision History Revision .l November 1997 This spec has changed in accordance with New Binning [s F ' ELECTROftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL KMM374S1623BTL SDRAM DIMM


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    kmm374s1623btl_kmm374s1623btl16mx72374s1623btl+41623btl400mil168-pin48s8030bt PDF

    KMM374S1623BTL

    Abstract: KMM374S1623BTL-G0
    Contextual Info: KMM374S1623BTL PC66 SDRAM MODULE KMM374S1623BTL SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1623BTL is a 16M bit x 72 Synchro­ nous Dynamic RAM high density memory module. The Samsung


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    kmm374s1623btl16mx72400mil168-pin+2kmm374s1b23btlkmm374s1623btl-g0 PDF

    KMM374S1623BT-G8

    Abstract: KMM374S1623BT-GH KMM374S1623BT-GL
    Contextual Info: KMM374S1623BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.


    Original
    kmm374s1623btpc100100mhzkmm374s1623bt-g8+2kmm374s1623bt-ghkmm374s1623bt-gl PDF

    Contextual Info: Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL_ Revision History Revision ,l November 1997 This spec has changed in accordance with New Binning - ELECTRONICS 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL KMM374S1623BTL SDRAM DIMM


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    kmm374s1623btl_kmm374s1623btl16mx72374s1623btl+41623btl374s1623btl-g125mhz400mqm PDF

    KMM374S1623BT-GL

    Abstract: KMM374S1623BT-G8 KMM374S1623BT-GH
    Contextual Info: Preliminary PC100 SDRAM MODULE KMM374S1623BT KM M 374S1623BT SDRAM DIMM 16M x72 SDRAM DIMM w ith ECC based on 8M x8, 4Banks, 4K Refresh, 3.3V S ynchronous D R AM s with SPD FEATURE G ENERAL DESCRIPTION T h e S a m s u n g K M M 3 7 4 S 1 6 2 3 B T is a 16M bit x 7 2 S y n c h ro n o u s


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    kmm374s1623btpc100kmm374s1623bt-glkmm374s1623bt-g8+1kmm374s1623bt-gh PDF

    KM48S8030BT-G10

    Abstract: KMM374S1623BTL-G0
    Contextual Info: KMM374S1623BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original
    kmm374s1623btl200mv66mhzkm48s8030bt-g10+1kmm374s1623btl-g0 PDF

    KMM374S1623BT-GL

    Contextual Info: KMM374S1623BT PC100 SDRAM MODULE KMM374S1623BT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1623BT is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan
    kmm374s1623btpc10016mx72400mil+2168-pinkmm374s1623bt-gl PDF

    Contextual Info: PC100 SDRAM MODULE KMM374S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : + 5 u A to ± 1 u A , - Cin to be measured at V dd I il (DQ) : + 5 u A to ± 1.5uA. = 3.3V, T a = 23°C , f = 1 MHz, V


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    kmm374s1623btpc100150maxkm48s8030bt PDF

    Contextual Info: KMM374S1 623BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V


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    kmm374s1623btpc100150max+1km48s8030bt PDF

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


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    km44s4020ctkm48s2020ctkm416s1020ctkm416s1021ct+121mx16km44s16020btkm48s8020btkm416s4020bt------------------------------------16mx44mx64kmm366s424btl-g0kmm466s824bt2f0kmm466s424bt-f0kmm466s824bt2-f04mx1616mx8 PDF