48S8030BT Search Results

Contextual Info: Preliminary KMM466S823BT2_144pin SDRAM SODIMM KMM466S823BT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION Perform ance range The Sam sung KM M 466S823BT2 is a 8M bit x 64 Synchronous

Contextual Info: Preliminary PC100 SDRAM MODULE KMM374S1623BT KMM374S1623BT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 374S 1623BT is a 16M bit x 72 Synchronous • Perform ance range

Contextual Info: Preliminary KMM375S823CT SDRAM MODULE KMM375S823CT SDRAM DIMM 8M x72 SDRAM DIMM with PLL & R egister based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Perform ance range T he Sam sung K M M 375S 823C T is a 8M bit x 72 S ynchronous

CDC2509

Contextual Info: Preliminary KMM378S823CT SDRAM MODULE KMM378S823CT 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE The Sam sung KM M 378S823CT is a 8M bit x 72 Synchronous • Perform ance range Dynam ic RAM high density m em ory m odule. The Sam sung

Contextual Info: Preliminary KMM377S823CT1 SDRAM MODULE KMM377S823CT1 SDRAM DIMM Intel 1.0 ver. Base 8M x72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Perform ance range The Sam sung KM M 377S823CT1 is a 8M bit x 72 Synchronous

374S1623BTL

Contextual Info: Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL_ Revision History Revision .l November 1997 This spec has changed in accordance with New Binning [s F ' ELECTROftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL KMM374S1623BTL SDRAM DIMM

Contextual Info: Preliminary PC100 SDRAM MODULE KMM374S823BT KMM374S823BT SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 374S 823B T is a 8M bit x 72 Synchronous : Perform ance range

Contextual Info: SDRAM MODULE Preliminary KMM375S823BT Revision History Revision 5 May 1998 - CLK Input Cap. is added by PLL Input Cap. (1 OpF) -. Revised PLL Input Cap. 24pF to 10pF and Feedback Cap. 12pF to 10pF. Revision 6 (June 1998) -. "REGE" description is changed.

Contextual Info: KM48S8030B CMOS SDRAM Revision History Revision .3 N ovem ber 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not m eet PC100 characteristics . So AC param eter/C haracteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage C urrents (Inputs / DQ) are changed.

Contextual Info: SDRAM MODULE Preliminary KMM375S1723T Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (1 OpF) -. Revised PLL Input Cap. 24pF to 10pF and Feedback Cap. 12pF to 10pF. Revision 4 (July 1998) -. "REGE" description is changed.

Contextual Info: Preliminary KMM350S823CT1 SDRAM MODULE KMM350S823CT1 SDRAM DIMM Intel 1.0 ver. Base 8M x72 SDRAM DIMM with Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 350S823CT1 is a 8M bit x 72 Synchronous

CDC2509

Contextual Info: Preliminary KMM378S823CT SDRAM MODULE KMM378S823CT 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE T he Sam sung KM M 378S823CT is a 8M bit x 72 Synchronous • Perform ance range Dynam ic RAM high density m em ory m odule. The Sam sung

Contextual Info: SDRAM MODULE Preliminary KMM375S823BT Revision History Revision 5 May 1998 - CLK Input Cap. is added by PLL Input Cap. (1 OpF) -. Revised PLL Input Cap. 24pF to 10pF and Feedback Cap. 12pF to 10pF. Revision 6 (June 1998) -. "REGE" description is changed.

Contextual Info: Preliminary Intel 1.0 SDRAM MODULE KMM366S823BTL_ Revision History Revision .l November 1997 This spec has changed in accordance with New Binning [s F ' ELECTROftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM366S823BTL KMM366S823BTL SDRAM DIMM

Contextual Info: Preliminary Intel 1.0 SDRAM MODULE KMM374S823BTL_ Revision History Revision .l N ovem ber 1997 This spec has changed in accordance with New Binning [s F ' ELECTRO ftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM374S823BTL

Contextual Info: Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL_ Revision History Revision ,l November 1997 This spec has changed in accordance with New Binning - ELECTRONICS 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL KMM374S1623BTL SDRAM DIMM

Contextual Info: Preliminary Intel 1.0 SDRAM MODULE KMM366S1623BTL_ Revision History Revision .l N ovem ber 1997 This spec has changed in accordance with New Binning [s F ' ELECTRO ftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM366S1623BTL

Contextual Info: Preliminary KMM377S823CT1 SDRAM MODULE KMM377S823CT1 SDRAM DIMM Intel 1.0 ver. Base 8M x72 SDRAM DIMM with PLL & R egister based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Sam sung KM M 377S823CT1 is a 8M bit x 72 Synchronous

48s8030

Contextual Info: Preliminary KM M375S823BT SDRAM MODULE KMM375S823BT SDRAM DIMM 8M x72 SDRAM DIMM with PLL & Register based on 8Mx8, 4B anks 4K Ref., 3.3V Synchronous DRAM s with SPD FEATURE G E N E R A L DESCRIPTION • Performance range The Samsung KMM375S823BT is a 8M bit x 72 Synchronous

KMM366S823BT-GL

Contextual Info: Preliminary PC100 SDRAM MODULE KMM366S823BT KMM366S823BT SDRAM DIMM 8M x64 SDRAM DIMM based on 8M x8, 4Banks, 4K Refresh, 3.3V S ynchronous DRAM s with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 366S 823B T is a 8M bit x 64 Synchronous : Perform ance range

48s8030

Contextual Info: SDRAM MODULE Preliminary KMM375S1723T Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (1 OpF) -. Revised PLL Input Cap. 24pF to 10pF and Feedback Cap. 12pF to 10pF. Revision 4 (July 1998) -. "REGE" description is changed.

Contextual Info: KMM466S823BT3 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1 uA. Input leakage C urrents (I/O) : ± 5uA to ± 1.5uA.