SU 2369 1 Search Results

BC-337 B 011

Abstract: BC 195 TRANSISTORS transistors BC 23 SO2221R BC-338 B 011 SO2484R BC 930 222-1 2221 bc 107 silicon equivalent
Contextual Info: A C T IV E COMPONENTS FOR H Y B R ID CIRCU ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES ê CB-166 SOT-23 Silicon NPN transistors, switching and general purpose Marl ing Mart,tuage Type Type N R . Pin conf. Brochage Transistors NPN silicium, usage générai et commutation

marking db2

Abstract: 5 x 7 dot matrix display S6A0070 tc 5070 controller S6A0065 S6A1070 S6A2067 marking s73 samsung s6 S43 P6
Contextual Info: 16COM/80SEG DRIVER & CONTROLLER FOR DOT MATRIX LCD S6A0070 INTRODUCTION The S6A0070 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology. It is capable of displaying 1 or 2 lines with the 5 x 7 format or 1 line with the 5 × 10 dots format. The mirror type of

MD2369

Abstract: MD2369AB MD2369B transistor k84 MD2369A MD2369AF MD2369BF MD2369F MQ2369
Contextual Info: M D 2 3 6 9 , A , B s il ic o n M D 2 3 6 9 F , A F , BF M Q 2369 M ULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose switches and am plifiers, fro n t end detectors, and temperature com­

transistor t2a

Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200

SG 2368

Abstract: UFND220
Contextual Info: UNITRODE CORP 9347963 TE U N IT R O D E CORP DE 1 ^ 3 4 7 ^ 3 DDlOfllS 1 | ~ 92D ’ iS'^15' 10815 P O W E R M O S F E T T R A N S IS T O R S 200 Volt, 0 .8 Ohm N-Channel UFND220 FEA TU R ES D ESC R IPTIO N • • • • • • • The Unitrode power M OSFET design utilizes the most advanced technology available. This

54LS374

Abstract: 54LS374DMQB H122 DM54LS373W DM74LS373N DM74LS373WM J20A LS373
Contextual Info: NATIONAL SEMICOND -CLOGIO bSGliaa GGTQGTS 0 B1E D -4ferO '7H | National Semiconductor </ CO a C » CO M DM54LS373/DM74LS373, 54LS374/DM54LS374/DM74LS374 TRI-STATE Octal D-Type Transparent Latches and Edge-Triggered Flip-Flops General Description Features

Contextual Info: SN54HC283, SN74HC283 4 BIT BINARY FULL ADDERS WITH FAST CARRY D 2 8 0 4 , M AR C H 1 9 8 4 —REVISED SEPTEMBER 19B7 Full-Carry Look-Ahead Across the Four Bits • Systems Achieve Partial Look-Ahead Performance with the Economy of Ripple Carry S N 5 4 H C 2 8 3 . . . J P AC KA G E

LS506

Contextual Info: TIBPLS506C 13 x 97 x 8 FIELD-PROGRAMMABLE LOGIC SEQUENCER D 3 0 9 0 . D E C E M B E R 1 9 8 7 - R E V IS E D N O V E M B E R 1 9 8 9 J T OR N T PAC KAG E • 50 -M H z Max Clock Rate

TL060B

Abstract: TL060CP RS2368 TL071 IC equivalent ic TL064 IC equivalent ic
Contextual Info: TL060, TL060A, TL060B, TL061, TL061A, TL061B TL062, TL062A, TL062B, TL064, TL064A, TL064B LOW POWER JFET-INPUT OPERATIONAL AMPLIFIERS D 23 92, N O V E M B E R 1 9 7 8 - R E V IS E D N O V E M B E R 198 8 20 DEVICES COVER MILITARY, INDUSTRIAL, AND COMMERCIAL TEMPERATURE RANGES

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

TIP 110 transistor

Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
Contextual Info: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature

tc 8066

Abstract: 2sk2370 K2369
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2369/2SK2370 is N -C hannel MOS Field E ffect T ra n sis- PACKAGE D IM E N S IO N S in m illim e te rs to r d e sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .

transistor C624

Abstract: T120TA 2N2457 B3 ho transistor C621 RT1111 2N1468 CK277 KVT 50/102n 3500 2SC502
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

tl066

Abstract: TL066CP
Contextual Info: TL066AC, TL066C, TL066I, TL066M ADJUSTABLE LOW-POWER JFET-INPUT OPERATIONAL AMPLIFIERS D 2 4 9 4 , FEBRUARY 1 9 7 9 -R E V IS E D OCTOBER 1 9 9 0 TL066AC. TL066C. TL066I . . . D OR P PACKAGE TL066M . . . JG PACKAGE 4 D E V IC E S C O V E R C O M M ER C IA L.

Contextual Info: HARRIS SEMICOND Technical Data SECTOR 37E D 43Q2S71 GDSSMSb ô BHAS* _ C D54/74AC164 C D 54/74A C T164 00 Q1 02 03 04 Advance Information 8-Bit Serial-In/Parallel-Out Shift Register 05 0« 07 MRCP- Vcc 3 14 G ND=7 92CS-38499 Type Features:

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

6389G50

Abstract: SIEMENS tle 420 TLE 4242 G Daelim 4269 HATTELAND TLE6389G50-1 4299G HB sot23 6389GV
Contextual Info: Ultimate POWER – Perfect Control COMPLETE Automotive Solutions from Infineon www.infineon.com/power Never stop thinking. Introduction Power and control – combine your success T H E E V E R I N C R E A S I N G level of power and control needed in automotive electronics is driving innovation in modern vehicles.

Contextual Info: FINAL COM’L: H-25 Lattice/Vantis PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

2T6551

Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
Contextual Info: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"

HPD17108

Contextual Info: SEC J.PD17108 4-BIT SINGLE-CHIP MICROCONTROLLER The;jP017108isa tinymicrocontrollerconsisting of a 1K-byte ROM, 16-word RAM, and 16input/output ports. The 17K architecture of the CPU uses general registers so that data memory can be manipulated directly for

0249J

Abstract: ATV25008 2500BQ
Contextual Info: Features * High-performance, High-density Programmable Logic Device - Typical 7 ns Pin-to-pin Delay - Fully Connected Logic Array with 416 Product Terms * Flexible Output Macrocell - 48 Flip-flops - Two per Macrocell - 72 Sum Terms - All Flip-flops, I/O Pins Feed in Independently

IC ATA 2388

Abstract: ATA 2388 we32100 YXXXX
Contextual Info: WE 32106 M ath A cceleratio n Unit Description The W E 32 10 6 M a th A c c e le ra tio n U n it MAU pro vid e s flo a tin g -p o in t c a p a b ility fo r th e WE 32100 M ic ro p ro c e s s o r a n d is fu lly co m p a tib le w ith th e IEEE S ta n d a rd fo r B in ary F lo a tin g ­

AD7581C

Contextual Info: ANALOG DEVICES □ FEATU RES 8-Blt Resolution On-Chip 8 X 8 Dual-Port Memory No Misted Codes Over Full Temperature Range Interfaces Directly to Z80/8065/6800 CMOS, TTL Compatible Digital Inputs Three-State Data Drivers Ratiometric Capability Interleaved D M A Operation