STB36N Search Results

Contextual Info: STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 Ω typ., 29 A FDmesh II Power MOSFETs with fast diode in D2PAK and TO-247 packages Datasheet - production data Features Order codes STB36NM60ND TAB STW36NM60ND 3 1 2 3 1 D2PAK TO-247 VDSS @TJ

STWA36NM60ND

Abstract: 36NM60ND
Contextual Info: STB36NM60ND, STW36NM60ND, STWA36NM60ND N-channel 600 V, 0.097 Ω typ., 29 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-247 and TO-247 long leads packages Datasheet − preliminary data Features Order codes VDSS @TJ max. STB36NM60ND STW36NM60ND

STB36NF02L

Contextual Info: STB36NF02L  N-CHANNEL 20V - 0.016 Ω - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA T YPE STB36NF02L • ■ ■ ■ ■ V DSS R DS on ID 20 V < 0.021 Ω 36 A TYPICAL RDS(on) = 0.016 Ω TYPICAL Qg = 19 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF

STB36NF03L

Contextual Info: STB36NF03L N-CHANNEL 30V - 0.015 Ω - 36A D2PAK LOW GATE CHARGE STripFET II POWER MOSFET PRELIMINARY DATA TYPE STB36NF03L • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.02Ω 36 A TYPICAL RDS(on) = 0.015 Ω TYPICAL Qg = 18 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF

Contextual Info: STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■

Contextual Info: STB36NM60N N-channel 600 V, 0.092 Ω, 29 A, MDmesh II Power MOSFET in D²PAK Features Order code VDSS @ TJmax RDS on max ID PW STB36NM60N 650 V < 0.105 Ω 29 A 210 W • 100% avalanche tested 3 ■ Low input capacitance and gate charge ■ Low gate input resistance

STP36NF06L

Abstract: STB36NF06L mosfet morocco
Contextual Info: STB36NF06L STP36NF06L N-CHANNEL 60V - 0.032 Ω - 30A D²PAK/TO-220 STripFET II POWER MOSFET PRELIMINARY DATA TYPE STB36NF06L STP36NF06L • ■ ■ ■ ■ VDSS RDS on ID 60 V 60 V < 0.040 Ω < 0.040 Ω 30 A 30 A TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY

Contextual Info: STB36NF03L  N-CHANNEL 30V - 0.013 Ω - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA T YPE STB36NF03L • ■ ■ ■ ■ V DSS R DS on ID 30 V < 0.018 Ω 36 A TYPICAL RDS(on) = 0.013 Ω TYPICAL Qg = 18 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF

STB36NF03L

Abstract: transistor c 144
Contextual Info: STB36NF03L  N-CHANNEL 30V - 0.015 Ω - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA T YPE STB36NF03L • ■ ■ ■ ■ V DSS R DS on ID 30 V < 0.02 Ω 36 A TYPICAL RDS(on) = 0.015 Ω TYPICAL Qg = 18 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF

Contextual Info: STB36NF03L N-CHANNEL 30V - 0.013 £2 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET - PRELIMINARY DATA TYP E STB36N F03L V d ss R dS oii Id 30 V < 0.018 Q. 36 A Q . TYPICAL RDS(on) =0.0 13 TYPICAL Qg = 1 8 n C @ 10V . OPTIMAL RDs(on)xQg TRADE-OFF . CONDUCTION LOSSES REDUCED

STB36NM60

Abstract: STB36NM60N
Contextual Info: STB36NM60N N-channel 600 V, 0.092 Ω, 29 A, MDmesh II Power MOSFET in DPAK package Datasheet — production data Features Order code VDSS @ TJmax RDS on max ID PW STB36NM60N 650 V < 0.105 Ω 29 A 210 W • 100% avalanche tested 3 ■ Low input capacitance and gate charge

STB36NF02L

Contextual Info: STB36NF02L N-CHANNEL 20V - 0.016 Ω - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA TYPE STB36NF02L • ■ ■ ■ ■ VDSS RDS on ID 20 V <0.021 Ω 36 A TYPICAL RDS(on) = 0.016 Ω TYPICAL Qg = 19 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF

STB36NF03L

Contextual Info: STB36NF03L N-CHANNEL 30V - 0.015 Ω - 36A D2PAK LOW GATE CHARGE STripFET II POWER MOSFET PRELIMINARY DATA TYPE STB36NF03L • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.02Ω 36 A TYPICAL RDS(on) = 0.015 Ω TYPICAL Qg = 18 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF

STB36NM60N

Abstract: 36NM60N
Contextual Info: STB36NM60N N-channel 600 V, 0.98 Ω, 25 A, MDmesh II Power MOSFET in D2PAK Preliminary data Features Type VDSS @ TJmax RDS on max ID PW STB36NM60N 600V <0.105Ω 32A 250W • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

Contextual Info: STB36NF03L  N-CHANNEL 30V - 0.015 Ω - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA T YPE STB36NF03L • ■ ■ ■ ■ V DSS R DS on ID 30 V < 0.02 Ω 36 A TYPICAL RDS(on) = 0.015 Ω TYPICAL Qg = 18 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF

Contextual Info: STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 Ω typ., 29 A FDmesh II Power MOSFETs with fast diode in D2PAK and TO-247 packages Datasheet - production data Features Order codes STB36NM60ND TAB STW36NM60ND 3 1 2 3 1 D2PAK TO-247 VDSS @TJ

STB36NF03L

Contextual Info: STB36NF03L N-CHANNEL 30V - 0.015 Ω - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA TYPE STB36NF03L • ■ ■ ■ ■ VDSS R DS on ID 30 V <0.02 Ω 36 A TYPICAL RDS(on) = 0.015 Ω TYPICAL Qg = 18 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF

STB36NF02L

Contextual Info: STB36NF02L N-CHANNEL 20V - 0.016 Ω - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA TYPE STB36NF02L • ■ ■ ■ ■ VDSS R DS on ID 20 V <0.021 Ω 36 A TYPICAL RDS(on) = 0.016 Ω TYPICAL Qg = 19 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF

Contextual Info: STB36NF02L N-CHANNEL 20V - 0.016 £2 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET - PRELIMINARY DATA TYP E S TB36N F02L V dss R dS oii Id 20 V < 0.021 Q. 36 A Q . TYPICAL RDS(on) =0 .0 1 6 TYPICAL Qg = 1 9 n C @ 10V . OPTIMAL RDs(on)xQg TRADE-OFF . CONDUCTION LOSSES REDUCED

STB36NF03L

Contextual Info: STB36NF03L N-CHANNEL 30V - 0.015 Ω - 36A D2PAK LOW GATE CHARGE STripFET II POWER MOSFET PRELIMINARY DATA TYPE STB36NF03L VDSS RDS on ID 30 V <0.02Ω 36 A TYPICAL RDS(on) = 0.015 Ω TYPICAL Qg = 18 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23