TB36N Search Results

Contextual Info: TB36NF02L N-CHANNEL 20V - 0.016 £2 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET - PRELIMINARY DATA TYP E S TB36N F02L V dss R dS oii Id 20 V < 0.021 Q. 36 A Q . TYPICAL RDS(on) =0 .0 1 6 TYPICAL Qg = 1 9 n C @ 10V . OPTIMAL RDs(on)xQg TRADE-OFF . CONDUCTION LOSSES REDUCED

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Contextual Info: MOTOROLA Order this document by TB36N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TB36N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TM OS POWER FET 32 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate

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Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”