ST95011 Search Results

Contextual Info: ST95011 SERIAL ACCESS SPI BUS 1K 128 x 8 EEPROM 100,000 ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE 4.5V to 5.5V SUPPLY VOLTAGE SPI BUS COMPATIBLE SERIAL INTERFACE 2 MHz CLOCK RATE MAX BLOCK WRITE PROTECTION STATUS REGISTER 16 BYTE PAGE MODE WRITE PROTECT

as011

Contextual Info: / I T SGS-IHOMSON * 71, M»lglL[g BTOWn(BS ST95041 ST95021, ST95011 4K/2K/1K SERIAL SPI EEPROM with NEGATIVE CLOCK STROBE • 1 MILLION ERASE/WRITE CYCLES ■ 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE - 4.5V to 5.5V for ST950x0 - 2.5V to 5.5V for ST950x0W

L-3 Communications

Contextual Info: ST95011 SERIAL ACCESS SPI BUS 1K 128 x 8 EEPROM 100,000 ERASE/WRITE CYCLES 10 YEARS DATA RETENTION SINGLE 4.5V to 5.5V SUPPLY VOLTAGE SPI BUS COMPATIBLE SERIAL INTERFACE 2 MHz CLOCK RATE MAX BLOCK WRITE PROTECTION STATUS REGISTER 16 BYTE PAGE MODE WRITE PROTECT

QO115

Contextual Info: r= J ^ 7 # » S G S -T H O M S O N M t S S tm itg ïM s W ST95011 i SERIAL ACCESS SPI BUS 1K 1 2 8 x 8 EEPROM • 100,000 ERASE/WRITE CYCLES ■ 40 YEARS DATA RETENTION ■ ■ ■ ■ ■ ■ ■ SINGLE 4.5V to 5.5V SUPPLY VOLTAGE SPI BUS COMPATIBLE SERIAL INTERFACE

Contextual Info: £ ÿ j S G S -T H O M S O N Q B @i[LI(gìr®(S R!in(@Ì ST95011 SERIAL ACCESS SPI BUS 1K (128 x 8) EEPROM • 100,000 ERASE/WRITE CYCLES ■ 40 YEARS DATA RETENTION ■ SINGLE 4.5V to 5.5V SUPPLY VOLTAGE ■ SPI BUS COMPATIBLE SERIAL INTERFACE ■ 2 MHz CLOCK RATE MAX

Contextual Info: SGS-THOMSON ST95041 ST95021, ST95011 4K/2K/1K SERIAL SPI EEPROM with NEGATIVE CLOCK STROBE 1 MILLION ERASE/WRrTE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE - 4.5V to 5.5V for ST950x0 - 2.5V to 5.5V for ST950x0W SPI BUS COMPATIBLE SERIAL INTERFACE

AI01526

Abstract: as010
Contextual Info: w , S G S -T H O M S O N ST95041 k7 # . [« » [g y g M lM O ^ _ ST95021, ST95011 4K/2K/1K SERIAL SPI EEPROM with NEGATIVE CLOCK STROBE • 1 MILLION ERASE/WRITE CYCLES ■ 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE - 4.5V to 5.5V for ST950x0 - 2.5V to 5.5V for ST950x0W

M3MB

Abstract: DQ7212 IG-121 000Q0
Contextual Info: rz 7 SCS-THOMSON ST95011 SERIAL ACCESS SPI BUS 1K 128 x 8 EEPROM • 100,000 E RASE/WRITE CYCLES ■ 10 YEARS DATA RETENTION ■ SINGLE 4.5V to 5.5 V SUPPLY VOLTAGE ■ SPI BUS COMPATIBLE SERIAL INTERFACE - 2 MHz CLOCK RATE MAX ■ BLOCK WRITE PROTECTION

Contextual Info: £ ÿ j S G S -T H O M S O N • 100,000 ERASE/WRITE CYCLES ■ 10 YEARS DATA RETENTION ■ SINGLE 4.5V to 5.5V SUPPLY VOLTAGE ■ SPI BUS COMPATIBLE SERIAL INTERFACE ■ 2 MHz CLOCK RATE MAX ■ BLOCK WRITE PROTECTION ■ STATUS REGISTER ■ 16 BYTE PAGE MODE

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

asm eagle

Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Contextual Info: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:

PJ 1179

Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Contextual Info: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

M93C46BN1

Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA