AS011 Search Results

Contextual Info: _ |j~l_ 4.00 TECH N ICA L CH AR ACTER ISTICS 1. General Characteristics Dimension: 21 30L x 13.15V«' x 2 20h Weight: Approx. 0.65 g Mounting System. SMT Type {post optional Durability 10,000 cycles min 2. Mechanical Characteristics Insulation material: ~ne'mcplastic. I L 94V-Q

AN404

Abstract: ST24C04 ST24W04 ST25C04 ST25W04
Contextual Info: r z j SG S-TH O M SO N ^ 7 # , SfflQ@^ lllLi @TrMRia(gi ST24C04, ST25C04 ST24W04, ST25W04 SERIAL ACCESS 4K ( 512x8 EEPROM 1 MILLION ERASE/WRrTE CYCLES with 10 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x04 versions - 2.5V to 5.5V for ST25x04 versions

Contextual Info: M95040 M95020, M95010 4K/2K/1K Serial SPI EEPROM with High Speed Clock and Positive Clock Strobe PRELIMINARY DATA 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE - 4.5V to 5.5V for M950x0 - 2.5V to 5.5V for M950x0-W - 1,8V to 3.6V for M950x0-R

as011

Contextual Info: / I T SGS-IHOMSON * 71, M»lglL[g BTOWn(BS ST95041 ST95021, ST95011 4K/2K/1K SERIAL SPI EEPROM with NEGATIVE CLOCK STROBE • 1 MILLION ERASE/WRITE CYCLES ■ 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE - 4.5V to 5.5V for ST950x0 - 2.5V to 5.5V for ST950x0W

as010

Abstract: ST95010 ST95020 ST95040 as011 16-18-W
Contextual Info: ST95040 ST95020, ST95010 w , S G S -T H O M S O N k7 # » R itlD Ê lM IlilL IK Ë in S M Q tÊ S 4K/2K/1 K BITS SERIAL SPI EEPROM W ITH x8 ORGANIZATION 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE - 4.5V to 5.5V for ST950x0 - 2.5V to 5.5V for ST950x0W

Contextual Info: /^ I7 T# , SGS-IHOMSON IMntGlRitöllglUKMMHIGg ST95040 ST95020, ST95010 4K/2K/1K BITS SERIAL SPI EEPROM W ITH x8 ORGANIZATION • 1 MILLION ERASE/WRITE CYCLES ■ 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE - 4.5V to 5.5V for ST950x0 - 2.5V to 5.5V for ST950x0W

as011

Abstract: AD411 wt246
Contextual Info: I T S lF t g ìQ ÌÌ ^ @ a { [R Ì® W a H Æ J MITSUBISHI LSIs M5M4V16409ATP-8r 10,-12,-15 Oct 26,1992 16MCDRAM:16M (4194304 - WORD BY 4 - BIT) Cache DRAM with 16k (4096-WORD BY4 -BIT) SRAM Preliminary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.

Contextual Info: »o ^T S ìT ^Ì@ ìì ;f¿A? q'iÜ¡ MITSUBISHI LSIs M5M4V4169TP-15,-20 Oct 26,1992 4MCDRAM:4M 262144 - WORD BY 16 - BIT) Cache DRAM with 16k (1D24-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.

Contextual Info: |£|< 3-0 '39? U MITSUBISHI LSIs M5M4V16409ATP-8,-10,-12,-15 Oct 26,1992 16MCDRAM-.16M 4194304 - WORD BY 4 - BIT Cache DRAM with 16k (4Q96-WORD BY4 -BIT) SRAM Preliminary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.

Contextual Info: ST95040 ST95020,ST95010 r^T *7/ 4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe • 1 MILLION ERASE/WRITE CYCLES ■ 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE - 4.5V to 5.5V for ST950x0 - 2.5V to 5.5V for ST950x0W ■ SPI BUS COMPATIBLE SERIAL INTERFACE

ADC0820CD

Abstract: ADC0820BCD ADC0620BD ADC0820 ADC0820BCN ADC0820CCJ ADC0820CCN ADC0820CJ oAC05 20pin 4bit adc
Contextual Info: NATL SEfllCOND LINEAR S2E D (□501124 00LT443 1 ADC0820 National Semiconductor microCMOS ADC0820 8-Bit High Speed jaP Compatible A/D Converter with Track/Hold Function General Description Features By using a half-flash conversion technique, the 8-bit ADC0820 CMOS A/D offers a 1.5 /ts conversion time and

AI01526

Abstract: as010
Contextual Info: w , S G S -T H O M S O N ST95041 k7 # . [« » [g y g M lM O ^ _ ST95021, ST95011 4K/2K/1K SERIAL SPI EEPROM with NEGATIVE CLOCK STROBE • 1 MILLION ERASE/WRITE CYCLES ■ 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE - 4.5V to 5.5V for ST950x0 - 2.5V to 5.5V for ST950x0W