ST25164 Search Results

ST24164

Abstract: ST25164 b2416 MSO8
Contextual Info: ST24164 ST25164 16Kb x8 SERIAL EEPROM DATA BRIEFING 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE

ST24164

Abstract: AN404 M24164 ST25164 ST2416
Contextual Info: ST24164 ST25164 16Kb x8 SERIAL EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE

ST24164

Abstract: AN404 ST24 ST25 ST25164
Contextual Info: r z T S G S -T H O M S O N ST24164 * 7 #» E » l g » IlL iO T ( ò K ! lD ( g i ST25164 SERIAL ACCESS 16K (2K x 8) EEPROM • 1 MILLION ERASE/W RiTE CYCLES with OVER 10 YEA RS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version

MDAB

Abstract: 24164s
Contextual Info: /= T ^7# S T 24164 ST25164 S G S -T H O M S O N [* ^ Q [i[L i(§ ¥ ^ @ [* S SERIAL ACCESS CMOS 16K (2048 x 8) EEPROMs • MINIMUM 1 MILLION ERASE/WRITE CYCLES with OVER 10 YEARS DATA RETENTION « SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24164 version

Contextual Info: ST24164 ST25164 SGS-THOMSON HDM [iL[i g»Kl S 16Kb (x8) SERIAL EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V tor ST24164 version - 2.5V to 5.5V tor ST25164 version ■ HARDWARE WRITE CONTROL PIN

Contextual Info: ST24164 ST25164 SERIAL 16K 2K x 8 EEPROM DATA BRIEFING 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE

Contextual Info: / T T S G S -T H O M S O N ^ 7 # . M O lM ilL IIM S IM K g i ST24164 S T25164 SERIAL 16K 2K x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version

Contextual Info: rZ J * 7 # . ST24164 ST25164 S G S -T H O M S O N H D W lllL iM S ia ig i SERIAL ACCESS 16K 2K x 8 EEPROM • 1 MILLION ERASE/WRiTE CYCLES with OVER 10 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version

AN404

Abstract: ST24164 ST25164
Contextual Info: ST24164 ST25164 SERIAL 16K 2K x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES with OVER 10 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE

ST24164

Abstract: FZJ 165 AN404 ST24 ST25 ST25164
Contextual Info: rz y ^ / # ST24164 ST25164 S G S -T H O M S O N K iilD g lS ilL E © T K ( B R !lD ( g S SERIAL 16K (2K x 8) EEPROM • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version

Contextual Info: SGS-THOMSON ^ 7 # ST24164 ST25164 K!ilD S lllLI©DTW!lll©i 16Kb x8 SERIAL EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version

ST24164

Contextual Info: ST24164 ST25164 SERIAL 16K 2K x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

ST24C02

Abstract: ST24C08 m24c02 ST24W02 equivalent AN995 ST24C01 ST24C04 ST24W01 M24C32-W ST24W04
Contextual Info: AN995 APPLICATION NOTE Changing from the ST24xxx and ST25xxx to the M24xxx In Your Application This document is written for users of the ranges of EEPROM device shown in Table 1. Table 1. ST24xxx and ST25xxx Devices VCC = 3.0 to 5.5 V VCC = 2.5 to 5.5 V ST24C01

asm eagle

Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Contextual Info: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:

Replacement for

Abstract: AN995 ST24W01 ST24C01 ST24C02 ST24C04 ST24C08 ST24W02 ST24W04 ST24W08
Contextual Info: AN995 APPLICATION NOTE Changing from the ST24xxx and ST25xxx to the M24xxx In Your Application This document is written for users of the ranges of EEPROM device shown in Table 1. Table 1. ST24xxx and ST25xxx Devices VCC = 3.0 to 5.5 V VCC = 2.5 to 5.5 V ST24C01

ST24C16

Abstract: AN995 ST24C01 ST24C02 ST24C04 ST24C08 ST24W01 ST24W02 ST24W04 ST24W08
Contextual Info: AN995 APPLICATION NOTE Replacing ST24xxx and ST25xxx by M24xxx Devices This document is written for users of the following ranges of EEPROM device: Table 1. Discontinued Ranges Vcc = 4.5 to 5.5 V Vcc = 2.5 to 5.5 V ST24C01 ST24W01 ST25C01 ST25W01 ST24C02 ST24W02

MK45H14

Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
Contextual Info: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .

PJ 1179

Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Contextual Info: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a

AN995

Abstract: ST24C02 ST24C04 ST24C08 ST24C16 ST24E32 ST24E64 ST24W01 ST24W02 ST24164
Contextual Info: AN995 APPLICATION NOTE Changing from the ST24xxx and ST25xxx to the M24xxx In Your Application This document is written for users of the following ranges of EEPROM device: Table 1. ST24xxx and ST25xxx Devices Vcc = 4.5 to 5.5 V Vcc = 2.5 to 5.5 V ST24C01 ST24W01

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

M93C46BN1

Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA