ST24C01 Search Results

Contextual Info: /Z T SGS-THOMSON *7 Æ b ST24C01 I* ^ S [Ì(M (q M Ì SERIAL ACCESS CMOS 1K (128 x 8 EEPROM • 1,000,000 ERASE/W RITE CYCLES MINIMUM, WITH O VER 10 YEARS DATA RETENTION ■ SINGLE 3V TO 5.5V SUPPLY VOLTAGE ■ TW O W IRE SERIAL INTERFACE, FULLY l2C

Contextual Info: / 3 T SCS-THOMSON *7 / ST24C01, ST25C01 ST24W01, ST25W01 SERIAL ACCESS 1K 128 x 8 EEPROM 00 • 1 MILLION ERASE/WRITE CYCLES with 10 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24 versions - 2.5V to 5.5V for ST25 versions ■ HARDWARE WRrTE CONTROL VERSIONS:

24c01r

Abstract: 24C01 25x01 ST24C01 ST24C01R ST24W01 ST25C01 ST25W01 24C01* serial eeprom
Contextual Info: ST24C01, ST25C01 ST24W01, ST25W01 SERIAL 1K 128 x 8 EEPROM DATA BRIEFING 1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 3V to 5.5V for ST24x01 versions – 2.5V to 5.5V for ST25x01 versions – 1.8V to 5.5V for ST24C01R version only

25x01

Abstract: ST24C01R ST24W01 ST25W01
Contextual Info: S E R IA L 1 K 1 2 8 x 8 E E P R O M 1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x01 versions - 2.5V to 5.5V forST25x01 versions - 1.8V to 5.5V for ST24C01R version only HARDWARE WRITE CONTROL VERSIONS:

ST24C02

Abstract: ST24C08 m24c02 ST24W02 equivalent AN995 ST24C01 ST24C04 ST24W01 M24C32-W ST24W04
Contextual Info: AN995 APPLICATION NOTE Changing from the ST24xxx and ST25xxx to the M24xxx In Your Application This document is written for users of the ranges of EEPROM device shown in Table 1. Table 1. ST24xxx and ST25xxx Devices VCC = 3.0 to 5.5 V VCC = 2.5 to 5.5 V ST24C01

ST25C transistor

Abstract: ST25C ST25C package 25x01 ST24C M24C01 M24C01-R M24C01-W ST24C01R ST24W01
Contextual Info: ST24/25C01, ST24C01R ST24/25W01 SERIAL 1K 128 x 8 EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 3V to 5.5V for ST24x01 versions – 2.5V to 5.5V for ST25x01 versions – 1.8V to 5.5V for ST24C01R version only

Contextual Info: r = 7 SGS-THOM SON ST24/25C01, ST24C01R *7 # . IlOWiUiMWIKêS ST24/25W01 S E R IA L 1 K 1 2 8 x 8 E E P R O M Table 1. Signal Names 8 \i w PSDIP8 (B) 0.25mm Frame S 0 8 (M) 150mil Width < Figure 1. Logic Diagram o DESCRIPTION This specification covers a range of 1K bits FC bus

Replacement for

Abstract: AN995 ST24W01 ST24C01 ST24C02 ST24C04 ST24C08 ST24W02 ST24W04 ST24W08
Contextual Info: AN995 APPLICATION NOTE Changing from the ST24xxx and ST25xxx to the M24xxx In Your Application This document is written for users of the ranges of EEPROM device shown in Table 1. Table 1. ST24xxx and ST25xxx Devices VCC = 3.0 to 5.5 V VCC = 2.5 to 5.5 V ST24C01

st24c01w

Abstract: ST24C01
Contextual Info: SCS-THOMSON O M itL IO T iM iê i ST24C01 SERIAL ACCESS CMOS 1K 128 x 8 EEPROM • 1,000,000 ERASE/W RITE CYCLES MINIMUM, WITH O VER 10 YEARS DATA RETENTION ■ SINGLE 3V TO 5.5V SUPPLY VOLTAGE ■ TW O W IRE SERIAL INTERFACE, FULLY l2C BUS COMPATIBLE ■ BYTE AN D M U LTIB Y TE W R ITE (UP TO 4

Contextual Info: SGS-THOMSON 5 7 . iy ST24C01, ST25C01 ST24x01C, ST25x01C SERIAL ACCESS CMOS 1K 128 x 8 EEPROMs ABBREVIATED DATA • MINIMUM 1 MILLION ERASE/WRITE CYCLES with OVER 10 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24C01 version - 3V to 5.5V for ST24x01 C versions

ST24C01

Contextual Info: r z z SGS-THOMSON JÆ, MfômifgTïïMOtgi ST24C01, ST25C01 ST24x01 C, ST25x01 C SERIAL ACCESS CMOS 1K 128 x 8 EEPROMs ABBREVIATED DATA • MINIMUM 1 MILLION ERASE/WRITE CYCLES with OVER 10 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24C01 version

Contextual Info: ST24C01CB1 IL08 * C-MOS 1K 256x4 -BIT EEPROM - TOP VIEW 1 E0 2 E1 3 E2 V DD (+5V) 8 E0 IN 1 7 MODE/WC IN E1 IN 2 4 GND 5 6 SCL 7 MODE/WC 6 SCL IN E2 IN 3 SDA 5 SDA I/O INPUT E0-E2 SCL MODE WC ; CHIP ENABLE ; SERIAL CLOCK ; MULTIBYTE/PAGE WRITE MODE (C VERSION)

ST24C16

Abstract: AN995 ST24C01 ST24C02 ST24C04 ST24C08 ST24W01 ST24W02 ST24W04 ST24W08
Contextual Info: AN995 APPLICATION NOTE Replacing ST24xxx and ST25xxx by M24xxx Devices This document is written for users of the following ranges of EEPROM device: Table 1. Discontinued Ranges Vcc = 4.5 to 5.5 V Vcc = 2.5 to 5.5 V ST24C01 ST24W01 ST25C01 ST25W01 ST24C02 ST24W02

25x01

Abstract: ST24C01R ST24W01 ST25W01
Contextual Info: ST24/25C01, ST24C01R ST24/25W01 SERIAL 1K 128 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 3V to 5.5V for ST24x01 versions – 2.5V to 5.5V for ST25x01 versions – 1.8V to 5.5V for ST24C01R version only

Contextual Info: r= T SGS-THOMSON ST24/25C01, ST24C01R * 7 /» HD»ll[Li W l ì!lDgi ST24/25W01 SERIAL 1K 128 x 8) EEPROM • 1 MILLION ERASE/WRITE CYCLESwlth 40 YEARS DATA RETENTION • SINGLE SUPPLY VOLTAGE: - 3Vto5.5VforST24x01 versions - 2.5V to 5.5V for ST25x01 versions

24C01W

Abstract: ST25C
Contextual Info: SGS-THOMSON ST24/25C01, ST24C01R noœiniemMioigs ST24/25W01 SERIAL 1K 128 x 8 EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x01 versions - 2.5V to 5.5V for ST25x01 versions

AN995

Abstract: ST24C02 ST24C04 ST24C08 ST24C16 ST24E32 ST24E64 ST24W01 ST24W02 ST24164
Contextual Info: AN995 APPLICATION NOTE Changing from the ST24xxx and ST25xxx to the M24xxx In Your Application This document is written for users of the following ranges of EEPROM device: Table 1. ST24xxx and ST25xxx Devices Vcc = 4.5 to 5.5 V Vcc = 2.5 to 5.5 V ST24C01 ST24W01

Contextual Info: S G S -T H O M S O N *7#« M » i [ L I « ô « S ^ ST24C01, ST25C01 ST24x01C, ST25x01C SERIAL ACCESS CMOS 1K (128 x 8) EEPROMs • MINIMUM 1 MILLION ERASE/WRITE CYCLES with OVER 10 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24C01 version

ST25C transistor

Abstract: st25c ST25C package 25x01 M24C01 M24C01-R M24C01-W ST24C01R ST24W01 ST25W01
Contextual Info: ST24/25C01, ST24C01R ST24/25W01 SERIAL 1K 128 x 8 EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 3V to 5.5V for ST24x01 versions – 2.5V to 5.5V for ST25x01 versions – 1.8V to 5.5V for ST24C01R version only

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

TOP SIDE MARKING M27C512

Contextual Info: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8