ST BDW83C Search Results

diode AE 84A

Abstract: BOW84C TRANSISTOR Bdw84d BDW 65 C BOW84
Contextual Info: BDW84, BDW84A, BDW84B, BOW84C, BDW84D PNP SILICON POWER DARLINGTONS Copyright 1987, Power Innovations Limited, UK • A U G U ST 1978 • R E V IS E D M A R C H 1997 Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D • 150 W at 25°C Case Temperature

ST BDW83C

Abstract: BDW83C ST DARLINGTON TRANSISTOR JESD97
Contextual Info: BDW83C NPN power Darlington transistor Features • High current capability ■ Fast switching speed ■ High DC current gain Applications ■ Linear and switching industrial equipment 3 2 1 Description TO-247 The BDW83C is an epitaxial-base NPN power monolithic Darlington transistor mounted in

Contextual Info: BDW83C NPN power Darlington transistor Datasheet — production data Features • High current capability ■ Fast switching speed ■ High DC current gain Applications ■ Linear and switching industrial equipment 3 2 1 TO-247 Description The BDW83C is an epitaxial-base NPN power

bdw83c

Abstract: ST BDW83C
Contextual Info: BDW83C NPN power Darlington transistor Datasheet — production data Features • High current capability ■ Fast switching speed ■ High DC current gain Applications ■ Linear and switching industrial equipment 3 2 1 TO-247 Description The BDW83C is an epitaxial-base NPN power

ST BDW83C

Contextual Info: BDW83C NPN power Darlington transistor Datasheet — production data Features • High current capability ■ Fast switching speed ■ High DC current gain s ct Applications ■ u d o Linear and switching industrial equipment 3 Description The BDW83C is an epitaxial-base NPN power

BDW83C

Abstract: BDW84C BDW83
Contextual Info: BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL

bdw84c

Abstract: SILICON COMPLEMENTARY transistors darlington BDW83C
Contextual Info: BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ BDW83C IS A STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL

DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

BUV48A

Abstract: TIP35CW failure report IGBT B505 BDW83C BU941ZP TIP142 TIP2955 TIP34C tip35
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN APM-PWR/07/2362 Notification Date 03/19/2007 Package change from TO218 to TO247 for Power Bipolar products PWR - PWR BIP/ IGBT/ RF 1/14 PCN APM-PWR/07/2362 - Notification Date 03/19/2007 Table 1. Change Identification

fw26025

Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
Contextual Info: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250

BU808DFH

Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
Contextual Info: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

SGSD100

Abstract: TIP142 BUTW92 BDW83C BDW84C BUW49 SGSD200 TIP145 TIP147 TIP36C
Contextual Info: Device type NPN i Vceo m TIP3055 TIP2955 BUW48 SGSD100 SGSD200 BUW49 lc VCFV fAl Ptat fw i hFE lc V et I^^3 VcE sat ® lc IB [A] m 60 60 10 125 1000 5 4 60 60 70 120 15 30 90 150 20 4 3 4 1.1 80 80 25 130 300 20 3 80 160 30 150 PNP TIP145 VCBO VCES Min

bdw83a

Contextual Info: 0 0 2 6 4 4 5 1 SCS-THOMSON iHiOTriiMDOi S B DW83 A/B/C BDW84A/B/C G S-TH0M S0N 3GE » HIGH CURRENT POWER DARLINGTON • HIGH CURRENT ■ HIGH GAIN DESC RIPTIO N The BDW83A/B/C are silicon epitaxial base NPN power monolithic Darlington mounted in TO-218 plastic package. They are intended for use in power

ST1803DFP

Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent
Contextual Info: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D

mje520

Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
Contextual Info: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink