SOT32 Search Results

BSS138PW

Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
Contextual Info: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using

2N7002BKW

Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

TRANSISTOR SMD CODE PACKAGE SOT323

Abstract: TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR 2a PMST3904 PMST3906 pmst3906 transistor smd transistor MARKING 2A npn MARKING CODE SMD IC transistor sc-70 marking codes 1325 pnp
Contextual Info: PMST3906 40 V, 200 mA PNP switching transistor Rev. 05 — 29 April 2009 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT323 SC-70 very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904.

BAP70-04W

Abstract: 04W2
Contextual Info: BAP70-04W Silicon PIN diode Rev. 02 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description Two planar PIN diodes in series configuration in a SOT323 small SMD plastic package. 1.2 Features • High voltage current control RF resistor for RF attenuators

BFT92

Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures

D441

Abstract: BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437
Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D • 711DfiSb □D4SclDti *153 ■ P H I N QUICK REFERENCE DATA SYMBOL ^CES PINNING - TO-126 SOT32 DESCRIPTION 1 emitter 2 collector

wave footprint

Contextual Info: Wave soldering footprint Footprint information for wave soldering of plastic surface-mounted package; 3 leads SOT323 4.6 2.575 1.425 3x 1.8 3.65 2.1 09 (2×) preferred transport direction during soldering solder land solder resist occupied area Dimensions in mm

STB7101

Abstract: GP 113
Contextual Info: STB7101 0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER • OPERATING FREQUENCY 900-1900MHz • OUTPUT POWER 9.8dBm typ. @ 900MHz 7.5dBm typ. @ 1900MHz • POWER GAIN GP = 20.3dB typ. @ 900MHz GP = 20.5dB typ. @ 1900MHz SOT323-6L SC70 ORDER CODE STB7101 BRANDING

BC817

Contextual Info: BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion • • Epitaxial Planar Die Construction • • Complementary PNP Types: BC807-xxW Case: SOT323 Case Material: molded plastic, “Green” molding compound

Contextual Info: PC board footprint Philips Semiconductors Footprint information for reflow soldering of QFP128 package SOT320-3 Hx Gx P2 Hy 0.125 P1 Gy By Ay C D2 (8x) D1 Bx Ax Generic footprint pattern Refer to the package outline drawing for actual layout solder land

BCR133W

Abstract: VSO05561
Contextual Info: BCR133W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR133W WCs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR142W

Abstract: VSO05561
Contextual Info: BCR142W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR108W

Abstract: VSO05561
Contextual Info: BCR108W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR112W

Abstract: VSO05561
Contextual Info: BCR112W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR198W

Abstract: VSO05561 MARKING WRS
Contextual Info: BCR198W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR198W WRs Pin Configuration 1=B 2=E Package 3=C SOT323

Contextual Info: A Product Line of Diodes Incorporated ZUMT491 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR IN SOT323 Features Mechanical Data • • • • • • • • • • • • Low saturation voltage 500mW power dissipation IC = 1A high Continuous Current Ideally suited for space / weight critical applicatons

RA SOT323

Contextual Info: ZUMD70-04 ZUMD70-05 SOT323 SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES ISSUE 1 - NO VEMBER 1998 Q_ 1 1 M M 3 2 2 3 SERIES PAIR COMMON CATHODE Device Type: ZUMD70-04 Device Type: ZUMD70-05 Partm arking Detail: D94 Partmarking Detail:

Contextual Info: SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSU E 1 - DECEMBER 1998_ FEATU RES * A v a la n c h e m ode operation * 50 A Peak a v a la n ch e current * Lo w in d u ctan ce p a cka g in g A P P L IC A T IO N S * La se r LE D d rive rs

Contextual Info: SOT323 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSUE 1- NOVEMBER 1998 FEATURES * H igh f T=900M H z M in * M ax capacitance=1pF * L o w noise 4.5dB PARTM ARKING DETAIL -T 6 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE UNIT 20 V Collector-Base Voltage

vc 125a

Contextual Info: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT717 ISSUE 1 - SEPTEMBER 1998 _ -FEATURES 500mW POWER DISSIPATION * * * * lc C O N T I.5 A 3A Peak Pulse Current Excellent HFE Characteristics Up To 3A (pulsed)

Contextual Info: SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ZUMT807-25 ISSUE 1 - DECEMBER 1998_ P A R T M A R K IN G D E T A ILS -T 8 C O M P L E M E N T A R Y TY P E - Z U M T 8 1 7 -2 5 ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL VALUE U N IT C o lle c to r-B a s e V o lta g e

Contextual Info: SOT323 NPN SILICON PLANAR ZUMTS20 VHF TRANSISTOR ISSUE 1 - DECEMBER 1998 Q_ PARTM ARKING DETAIL — T3 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE UNIT C o lle c to r-B a s e V o lta g e VcBO 30 V V C o lle c to r-E m itte r V o lta g e

Contextual Info: SOT323 PNP SILICON PLANAR ZUMT2907A SWITCHING TRANSISTOR ISSUE 1 - OCTOBER 1998 Q_ FEATURES * Fast s w itc h in g PARTM ARKING D E T A IL -T 1 5 CO M PLIM E N TA R Y TYPE - Z U M T 2 22 2 A ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF