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    ST BD441 Search Results

    ST BD441 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BD439

    Abstract: st bd441 BD441 BD442 JESD97 BD441 an
    Contextual Info: BD441 NPN power transistor Features • NPN transistor Applications ■ Linear and switching industrial equipment Description This device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance


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    bd441bd442ot-32bd439+3st bd441jesd97bd441 an PDF

    st bd441

    Abstract: bd439 BD441 0016114E BD440 BD442 JESD97
    Contextual Info: BD439 BD441 NPN power transistors Features • . NPN transistors Applications ■ Linear and switching industrial equipment Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


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    bd439bd441bd440bd442+4ot-32st bd4410016114ejesd97 PDF

    st bd441

    Abstract: BD439 and BD440 BD442 bd439 bd441 application note datasheet d 442 transistor BD441 BD440 BD441 DSA0046731
    Contextual Info: BD439/BD440 BD441/BD442 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD439 and BD441 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in power linear and


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    bd439/bd440bd441/bd442bd439bd441+9ot-32bd440bd442st bd441bd439 and bd440bd441 application notedatasheet d 442transistor bd441dsa0046731 PDF

    0307b

    Abstract: BD439 BD441 SE 442 BD440 BD442 bd43
    Contextual Info: BD439/BD440 BD441/BD442  COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD439 and BD441 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in power linear and


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    bd439/bd440bd441/bd442bd439bd441+6ot-32bd440bd4420307bse 442bd43 PDF

    DK53

    Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
    Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


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    2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171dk53dk52bu724asmje20552n3055 replacementbux98pibd263bd699bd2922n5037 PDF

    bd442

    Abstract: BD440
    Contextual Info: BD440 BD442 PNP power transistors Features • PNP transistors Applications ■ Linear and switching industrial equipment Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


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    bd440bd442bd439bd441+1ot-32 PDF

    transistor bd442

    Abstract: 0016114E BD440 BD441 BD442 JESD97 PNP POWER TRANSISTOR SOT-32
    Contextual Info: BD442 PNP power transistor Features • PNP transistor Applications ■ Linear and switching industrial equipment Description This devices is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


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    bd442bd441ot-32transistor bd442+40016114ebd440jesd97pnp power transistor sot-32 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14f155-6af155-10af165-15a+11f175-25airfb4115bty79 equivalentdiode skn 21-04marking code w04 sot-23bbc 598 479 diodemw 137 600gtfk 401 s 673vishay telefunken tfk transistorinfineon transistor marking w31jys marking transistor PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353 PDF

    fw26025

    Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
    Contextual Info: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250


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    o-264hd1530jlhd1750jlo-220+16ot-223o-220fpot23-6lo-126o-220fhisowatt218fw26025fw26025afw26025a1 equivalentfw26025a1st5027st1802fxst2310fxmd1803dfxbul312fpbu808dfh PDF

    ST1803DFP

    Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent
    Contextual Info: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D


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    ot-32o-126bd433bd435+16mje521bd135bd437bd235bd4392n5191st1803dfpbux98pibu808dfi equivalentbuv48fielectronic balastst1803dhi equivalentst2001hisot93 packagebux48ast2310hi equivalent PDF

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    24ghzbf517b132-h8248-g5-x-76002sc3052ef+92n2222a sot23transistor smd marking code s2a1n4148 smd ll-34transistor smd code package sot232n2222 sot23transistor s1a 64 smd1n4148 sod323semiconductor cross referencetoshiba smd marking code transistor PDF

    BU808DFH

    Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
    Contextual Info: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416


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    stx112stbv68stbv45stbv42+16stbv32stx13003bss44bfx342n51532n5681bu808dfhst2310dhibu808dfh equivalentbu808dfi equivalentbu808dfh bu808dfibux98apwbuv27bd911/bd912electronic ballast mje13007st1803dfh PDF

    BUX98PI

    Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
    Contextual Info: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490


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    2n30552n34392n34402n3771+162n37722n49232n50382n51532n51542n5191bux98pitip147tbu808dfi equivalent2n3055 to-2202n3055 to-218 packagefluorescent ballast mje13007tip3055 to-220st1803dhi equivalentbu508afi equivalentbu808dfi PDF

    mje520

    Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
    Contextual Info: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50


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    bd433mje200mje520bd435+152n49212im51902im6037mje521mje180bd135sgs1f444sgsd00030e13008but232m3771but62buw42ap2n5337buw32ap PDF

    F B0347

    Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
    Contextual Info: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *


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    dd3ss11f b0347b0349bc184lb+7b067935s20bdx330b0242cf b0349b0346bd370-6 PDF

    BU108

    Abstract: 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD437 BD441 Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442. 4.0 AMPERES POWER TRANSISTORS NPN SILICON CASE 77–08 TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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    bd438bd442bd437bd441+15tip73btip74tip74atip74btip75tip75abu1082sc7rca1c03to-126 high speed switching transistorbdx542sc19432sc1419bu326bu100 PDF

    2SA1046

    Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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    bd437bd441bd438bd440+16bd442tip73btip74tip74atip74btip752sa1046bd4192sc1943bd4202bd4202sc20712sc12372sa939bd1332sc1903 PDF

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    38v01transistor tip122 chn 949e2955tbd706+7tu f 1300313003 transistor npn power to 126transistor e2955tconstruction linear amplifier 2sc1945la 43018d679transistor bf 175 PDF

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367 PDF

    SN76477

    Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
    Contextual Info: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p


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    2114l6116p36116lp3ay-3-1270+16ay-3-1350ay-3-8910ay-3-8912ay-5-1230ca3080eca3130esn76477tny 176 pn equivalent2n4401 free transistor equivalent booktis43xr2206 application notessemiconductor data handbook mj8022n3866 s2pbc149ctip35c tip36c sub amplifier circuit diagramlm131 PDF

    UAA2001

    Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
    Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­


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    0hf400hf600hf806fp10+126f10070hf10uaa2001mc8500micromodule m68mm191n938874als6432n6058mc1450262n5160 motorolamc3340 equivalentpn3402 PDF

    D-6840

    Abstract: transistor BD 441 IXBD 4413 efu dual mosfet POB11SO BD4410PI 4410PI ixys vco 52 full bridge igbt induction heating generator 2675000101
    Contextual Info: 4bE D • Mb ô b E E b I X Y S 000105Ö 1 H IX Y CORP □IXYS T ’- S Z . H V ^ O PRELIM INARY INFORMATION* Data Sheet No. 91503A October 1991 ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V o r Greater Low- to High-Side Isolation.


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    ixbd4410/44111503aixbd4410ixbd4411+15ixbd4412ixbd441310oopf100ns000pfd-6840transistor bd 441ixbd 4413efu dual mosfetpob11sobd4410pi4410piixys vco 52full bridge igbt induction heating generator2675000101 PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    tda0161 equivalent1n3393bdx54f equivalentbyt301000+6bux transient voltage suppressorst90r9ua776mhsgs 2n3055transistor morocco mje13007inmos transputer reference manual PDF