SSP7N80A Search Results
SSP7N80A Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SSP7N80A | Fairchild Semiconductor | Advanced Power MOSFET | Original | 261.46KB | 7 | ||
| SSP7N80A | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| SSP7N80A | Fairchild Semiconductor | Advanced Power MOSFET | Scan | 170.53KB | 6 |
SSP7N80A Price and Stock
Fairchild Semiconductor Corporation SSP7N80AAdvanced Power MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SSP7N80A | 100 | 1 |
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SSP7N80A | 80 |
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Samsung Electro-Mechanics SSP7N80APOWER FIELD-EFFECT TRANSISTOR, 7A I(D), 800V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SSP7N80A | 475 |
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Southern Electronics SSP7N80APOWER FIELD-EFFECT TRANSISTOR, 7A I(D), 800V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SSP7N80A | 117 |
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SSP7N80A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SSP7N80A Advanced Power MOSFET FEATURES B V DSS - 800 V • Avalanche Rugged Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. Low RDS(ON) ^DS(on) = 1.8 a < h- Rugged Gate Oxide Technology |
OCR Scan |
ssp7n80ao-220g04g4s4003b32fl+3 | |
SSP7N80AContextual Info: SSP7N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 800 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA Max. @ VDS= 800V |
OCR Scan |
ssp7n80a | |
SSP7N80AContextual Info: SSP7N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 1.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 800V |
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ssp7n80ao-220 | |
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Contextual Info: Advanced SSP7N80A Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 800 V ^ D S o n = 1 . 8 Q. lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V |
OCR Scan |
ssp7n80a | |
SSP7N80A
Abstract: mosfet yb
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OCR Scan |
ssp7n80amosfet yb | |
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Contextual Info: SSP7N80A Advanced Power MOSFET FEATURES BVDSS = 800 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25nA Max. @ VDS = 800V |
OCR Scan |
ssp7n80ao-220 | |
fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14 | |
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
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rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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2n70002n70022sj3772sj378+16 | |
SSH6N80
Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
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buz10buz11buz11abuz71+16 | |
SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
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sc70-6ot-23fdr8321lfdr8521l+13 | |
ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
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f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7 | |
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fqp60n06
Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14 | |