SRAM 32K X 8 Search Results

145AA

Abstract: FIT4 8361H CY7C1399 CY7C199 JESD22
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97202 VERSION 1.0 November, 1997 32K x 8 SRAM, R32 Technology, Fab 4 Qualification CY7C199 32K x 8 SRAM 5V Operation CY7C1399 32K x 8 SRAM (3.3V Operation) Cypress Semiconductor, Inc. 32K x 8 SRAM - R32D Technology

CY62256-SNC

Abstract: CY62256 CY62256V JESD22
Contextual Info: Qualification Report February 1997 QTP# 97063, Version 1.0 32K x 8 Low Power SRAM - R32 Technology Part Number Description CY62256 32K x 8 SRAM Low Power 5V Operation CY62256V 32K x 8 SRAM Low Power (3V Operation) PRODUCT DESCRIPTION (for qualification)

CY62256

Abstract: CY62256V CY62256-VC
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97132 VERSION 1.0 April, 1997 32K x 8 Low Power SRAM - R32 Technology - Fab4 Qualification Part Number Description CY62256 32K x 8 SRAM Low Power 5V Operation CY62256V 32K x 8 SRAM Low Power (3V Operation)

SOJ 44

Abstract: 84-1MISR4 CY7C1020 CY7C1020V33 EME-6300 JESD22 ASE Cypress Qualification
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97044, VERSION 1.0 July, 1997 32K x 16 SRAM, R3 Technology, Fab 4 Qualification CY7C1020 CY7C1020V33 32K x 16, 5V Static RAM 32K x 16, 3.3V Static RAM Cypress Semiconductor 32K x 16 SRAM, R3 Technology, Fab 4

Mil-Std-883 Wire Bond Pull Method 2011

Abstract: 28-pin SOJ SRAM 9749 cel 9200 8361H CY62256V JESD22
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97496, VERSION 1.1 March 1999 256K SRAM, R42 Technology, Fab 4 Qualification CY62256V* 32K x 8 Micro Power Asynchronous SRAM 2.7V - 3.6V CY62256V25* 32K x 8 Micro Power Asynchronous SRAM (2.3V - 2.7V) CY62256V18*

GVT7232A8

Abstract: GALVANTECH
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT7232A8 TRADITIONAL PINOUT 32K X 8 SRAM 32K x 8 SRAM +5V SUPPLY, SINGLE CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTION • • • The GVT7232A8 is organized as a 32,768 x 8 SRAM using a four-transistor memory cell with a high performance,

DQY32

Contextual Info: ADVANCE INFORMATION GVT8132P36 32K X 36 PIPELINED SRAM GALVANTECH, INC. DUAL I/O DUAL ADDRESS SYNCHRONOUS SRAM 32K X 36 SRAM +3.3V SUPPLY, FULLY REGISTERED TWO BI-DIRECTIONAL DATA BUSES FEATURES GENERAL DESCRIPTION • • • • • • • The GVT8132P36 SRAM integrates 32,768 x 36 SRAM

GVT7132D32

Abstract: 7132D32
Contextual Info: GALVANTECH, GVT7132D32 32K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 32K x 32 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTIO N • • • • • The Galvantech Synchronous Burst SRAM family

GVT7132C32

Abstract: marking A00 GVT7132C32Q-4
Contextual Info: GALVANTECH, INC. GVT7132C32 32K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 32K x 32 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family

GVT7132D32

Abstract: "32K x 32" SRAM marking a11
Contextual Info: GALVANTECH, INC. GVT7132D32 32K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 32K x 32 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family

GVT7232A8

Contextual Info: GALVANTECH, INC. GVT7232A8 TRADITIONAL PINOUT 32K X 8 SRAM ASYNCHRONOUS SRAM 32K x 8 SRAM +5V SUPPLY, SINGLE CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • The GVT7232A8 is organized as a 32,768 x 8 SRAM using a four-transistor memory cell with a high performance,

GALVANTECH

Abstract: GVT7132B36 DQ25d
Contextual Info: GALVANTECH, INC. GVT7132B36 32K X 36 SYNCHRONOUS BURST SRAM 32K x 36 SRAM SYNCHRONOUS BURST SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Galvantech Synchronous Burst SRAM family

A12L

Abstract: IDT70V7278
Contextual Info: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 8K x 16 banks

DRAM 256 X 1, 18 PDIP

Abstract: 64K X 4 SRAM mmui
Contextual Info: A Contents Fast SRAM Low Voltage Fast SRAM Short Form 1995 AS7C164 8K x 8 3 AS7C256 32K x 8 4 AS7C259 32K x 9 5 AS7C512 64K x 8 6 AS7C1024 128K x 8 300/400 mil 7 AS7C1028 256K x 4 400 mil 8 AS7C3256 32K x 8 3.3V 9 AS7C3512 64K x 8 3.3V 10 AS7C31024 128K x 8

M48Z30

Abstract: M48Z30Y
Contextual Info: M48Z30 M48Z30Y CMOS 32K x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER PIN and FUNCTION COMPATIBLE with JEDEC STANDARD 32K x 8 SRAMs

A12L

Abstract: IDT70V7278 register with truth table
Contextual Info: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. ADVANCED IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 8K x 16 banks

Contextual Info: I dt Integrated Device Technology, Inc. HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 8K x 16 banks

Contextual Info: Integrated D e v ile Technology, li e . HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 8K x 16 banks

Contextual Info: |U |I C R O N 32K X M T58LC 32K 32/36D 8 32/36 S Y N C B U R S T SRAM 32K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • Fast access times: 4.5, 5, 6 and 7ns

Contextual Info: MT5C2568 883C 32K x 8 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 32K x 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • • • • • Ultra high speed 12, 15ns High speed: 20, 25, 35 and 45ns Battery backup: 2V data retention Low power standby

Contextual Info: ADVANCE 32K SYNCHRONOUS SRAM X M T58LC 32K 36D 7 36 S Y N C B U R S T SRAM 32K x 36 SRAM +3.3V SUPPLY, PIPELINED, SINGLE CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES Fast access times: 4.5, 5, 6. 7 and 8ns Fast O E access tim es: 5 and 6ns Single +3.3V + 1 0 % /-5 % pow er supply

V727

Abstract: ce1111
Contextual Info: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS I dt Integrated Device Technology, Inc. PRELIMINARY IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 8K x 16 banks

58LC32K

Abstract: 58Lc32
Contextual Info: JÚl ft 8 19« ADVANCE MT58LC32K36C4 32K X 36 SYNCHRONOUS SRAM MICRON • SCMlCONOlATTOa MC SYNCHRONOUS SRAM 32K x 36 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS AND BURST COUNTER FEATURES • • • • • • • • • • • • • •

MTSC2568

Contextual Info: MICRON TECHNOLOGY INC S5E D blllSH T 0003145t, TOT IMRN MT5C2568 32K X 8 SRAM [MICRON H < o -V b -\ 7 > SRAM 32K X 8 SRAM • High speed: 10*, 12*, 15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply