CY7C1020 Search Results

CY7C1020

Contextual Info: Y7C10 PRELIMINARY CY7C1020 32K x 16 Static RAM Features BLE is LOW, then data from I/O pins (I/O 1 through I/O8), is written into the location specified on the address pins (A0 through A 14). If byte high enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A14).

A10C

Abstract: A14C CY7C1020
Contextual Info: fax id: 1074 PRELIMINARY CY7C1020 WO YPHESS 32K Features BLE is LOW, then da ta from I/O pins (l/O-i thro u g h l/Og), is w ritten into the location specified on the address pins (A 0 throu gh A 1 4 ). If byte high enable (BHE) is LOW, then da ta from I/O pins (l/Og throu gh l/O-ie) is w ritten into the location sp e ci­

Contextual Info: fax id: 1075 CY7C1020V _ Features 32Kx 16 Static RAM BLE is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq through A 1 4 ). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through l/0-|6) is written into the location speci­

Contextual Info: PRELIMINARY CY7C1020 3 2 K x 16 Static RAM Features BLE is LOW, then data from I/O pins <l/0-| through l/0 8), is written into the location specified on the address pins (A0 through A14). If byte high enable (BHE) is LOW, then data from I/O pins (l/09 through l/0 16) is written into the location speci­

CY7C1020B

Contextual Info: 020B CY7C1020B 32K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CY7C1020CV33

Abstract: CY7C1020V33
Contextual Info: CY7C1020CV33 512K 32K x 16 Static RAM Features Functional Description • Pin- and function-compatible with CY7C1020V33 • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C The CY7C1020CV33 is a high-performance CMOS static

A14C

Abstract: CY7C1020V
Contextual Info: fax id: 1075 ^ ;a a a z g g s t CY7C1020V PRELIMINARY ; U I F lm ß b ö 32K Features 16 Static RAM X BLE is LOW, then da ta from I/O pins (l/O-j throu gh l/ 0 8), is w ritten into the location specified on th e address pins (A 0 throu gh A-| 4 ). If byte high en ab le (BH E) is LOW, then da ta from

Contextual Info: CY7C1020B 32K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

Contextual Info: CY7C1020CV33 512K 32K x 16 Static RAM Features Functional Description • Pin- and function-compatible with CY7C1020V33 • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C The CY7C1020CV33 is a high-performance CMOS static

Contextual Info: CY7C1020DV33 512 K 32 K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption when deselected. • Pin-and function-compatible with CY7C1020CV33 ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 60 mA @ 10 ns

CY7C1020CV33

Abstract: CY7C1020DV33
Contextual Info: CY7C1020DV33 512K 32K x 16 Static RAM Features • Pin-and function-compatible with CY7C1020CV33 • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10 ns • Low CMOS standby power • • • • • — ISB2 = 3 mA 2.0V Data retention

CY7C1020CV33-15ZXI

Abstract: CY7C1020CV33 CY7C1020V33
Contextual Info: CY7C1020CV33 512K 32K x 16 Static RAM Features Functional Description • Pin- and function-compatible with CY7C1020V33 • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C The CY7C1020CV33 is a high-performance CMOS static

Contextual Info: CY7C1020CV33 512 K 32 K x 16 Static RAM 512 K (32 K × 16) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1020CV33 ■ Temperature Ranges ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive: –40 °C to 125 °C

SOJ 44

Abstract: 84-1MISR4 CY7C1020 CY7C1020V33 EME-6300 JESD22 ASE Cypress Qualification
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97044, VERSION 1.0 July, 1997 32K x 16 SRAM, R3 Technology, Fab 4 Qualification CY7C1020 CY7C1020V33 32K x 16, 5V Static RAM 32K x 16, 3.3V Static RAM Cypress Semiconductor 32K x 16 SRAM, R3 Technology, Fab 4

Contextual Info: fax id: 1075 CY7C1020V _ 3 2 K x 16 Static RAM BLE is LOW, then data from I/O pins (l/O-j through l/0 8), is written into the location specified on the address pins (A0 through A 14). If byte high enable (BHE) is LOW, then data from I/O pins (l/0 9 through l/O i6) is written into the location speci­

Contextual Info: 020CY7C10 CY7C1020 32K x 16 Static RAM Features BLE is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A14). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location

Contextual Info: CY7C1020CV33 32K x 16 Static RAM Features • Pin- and function-compatible with CY7C1020BV33 • High speed — tAA = 8, 10, 12, 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Automatic power-down when deselected • Independent control of upper and lower bits

Contextual Info: CY7C1020CV26 512Kb 32K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

Contextual Info: CY7C1020CV33 512K 32K x 16 Static RAM Features Functional Description • Pin- and function-compatible with CY7C1020V33 • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C The CY7C1020CV33 is a high-performance CMOS static

Contextual Info: CY7C1020BN 32K x 16 Static RAM Features Functional Description • High speed The CY7C1020BN is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected.

Contextual Info: CY7C1020D 512K 32K x 16 Static RAM Features • Pin- and function-compatible with CY7C1020B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10ns • Low CMOS Standby Power • • • • • — ISB2 = 3 mA 2.0V Data Retention Automatic power-down when deselected

CY7C1020CV26

Abstract: CY7C1020CV26-15ZSXE
Contextual Info: CY7C1020CV26 512 Kb 32 K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable (CE) and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

TSOP 66 Package thermal resistance

Contextual Info: CY7C1020D 512K 32K x 16 Static RAM Features Functional Description [1] • Pin- and function-compatible with CY7C1020B ■ High speed The CY7C1020D is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power

CY7C1020B-15ZXC

Abstract: CY7C1020B
Contextual Info: CY7C1020B 32K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0