9749 Search Results

IRG7PH46UDPBF

Abstract: 028005
Contextual Info: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

AN-994

Abstract: AUIRLR3410 IRL530N
Contextual Info: PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified *

9749

Contextual Info: Product sheet Subminiature connectors Product Area Male socket, dip solder termination Snap-in connectors IP 40 Pole Article number serie 709/719 illustration scale drawing Contact Arrangement Installation instructions / Mounting cutout 3 09 9749 20 03 Item description

Contextual Info: PD - 97493B IRFH6200PbF HEXFET Power MOSFET VDS 20 V RDS on max 1.20 mΩ 1.50 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) PQFN 5X6 mm Applications • Charge and discharge switch for battery application • Load switch for 12V (typical) bus Features and Benefits

ir1f

Abstract: 10MQ040N 10MQ100N 2f marking code 036 marking diode ir1f 10MQ060N 15MQ040N 9749 1F marking
Contextual Info: SMA PART MARKING PART NUMBER EXAMPLES Example: 10MQ040N INTERNATIONAL RECTIFIER IDENTIFICATION PART NUMBER IR1F 9749 CATHODE BAND SIDE 1F = 10MQ040N 1H = 10MQ060N 1J = 10MQ100N 2F = 15MQ040N DATE CODE YYWW YY = YEAR WW = WEEK

Contextual Info: PD - 97493 IRFH6200PbF HEXFET Power MOSFET VDS 20 V RDS on max 1.20 mΩ 1.50 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) PQFN 5X6 mm Applications • Charge and discharge switch for battery application • Load switch for 12V (typical) bus Features and Benefits

Contextual Info: PD - 97490A IRFH5210PbF HEXFET Power MOSFET VDS 100 V RDS on max 14.9 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 55 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

low frequency inverter

Abstract: MIL-HDBK-263
Contextual Info: PD - 97497 IRG7CC20FB Features • Low VCE on • 3µs Short Circuit Capability • Square RBSOA C 600V IC(nom)=12A VCE(on) typ.=1.6V @ IC(nom) @ 25°C Short Circuit Rated 150mm Wafer Benefits • Benchmark Efficiency for Motor Control Applications • Rugged Transient Performance

MIL-HDBK-263

Contextual Info: PD - 97496 IRG7CC12FB Features • Low VCE on • 3µs Short Circuit Capability • Square RBSOA C 600V IC(nom)=8.0A VCE(on) typ.=1.6V @ IC(nom) @ 25°C Short Circuit Rated 150mm Wafer Benefits • Benchmark Efficiency for Motor Control Applications • Rugged Transient Performance

Prescaler

Contextual Info: May 26, 1998 Errata Sheet Revision 2.1 Date Code s : Known Issues: 9747, 9749, 9750, 9810, 9811, 9812 1. With Vpp > 13V, chips will be damaged in both serial or parallel programming modes Fix: Avoid applying Vpp > 12.5V, latest version of SX-Key hardware tested at

thermistor SCK 056 NTC

Abstract: SCK 2r58 SCK 037 SCK-075 sck 057 SCK056 sck 056 thermistor SCK 057 SCK 164 SCK-154
Contextual Info: THINKING THINKING THINKING THINKING NTC POWER THERMISTOR E 138827 ® LR 97495 Ł POWER DERATING CURVE 15Ø SERIES Ł SPECIFICATION Part No Zero Power Resistance at 25˚C Ω SCK-1R38 SCK-1R58 SCK-2R58 SCK-037 SCK-046 SCK-048 SCK-056 SCK-057 SCK-065 SCK-075

IRG7PH46UDPBF

Abstract: 600v 20a IGBT driver igbt 40A 600V P channel 600v 20a IGBT C-150
Contextual Info: PD - 97498 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

IRFH6200TR2PBF

Abstract: IRFH6200TRPBF AN-1154 IRFH62 PQFN footprint
Contextual Info: PD - 97493A IRFH6200PbF HEXFET Power MOSFET VDS 20 V RDS on max 1.20 mΩ 1.50 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) PQFN 5X6 mm Applications • Charge and discharge switch for battery application • Load switch for 12V (typical) bus Features and Benefits

Contextual Info: 112TW1-70E Page 1 112TW1-70 E Home : Products : TW » Switches » MICRO SWITCH Toggle Switches Search Products Controls Monitoring and Lighting ( 352) Machine Safety (1701) Sensors (6224 ) Switches ( 9749) Wireless (21) Technology Electromechanical (9301 )

Contextual Info: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

Contextual Info: PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant

TSOP Type II

Abstract: 9749 cel 9200 140C 8361H JESD22 Cypress 44LD
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97491, Version 1.0 March, 1998 44 Ld TSOP Type II OSE, Taiwan Assembly Cypress Semiconductor Assembly: OSE, Taiwan Assembly Package: 44Ld TSOP Type II QTP# 97491, V. 1.0 2 of 4 March, 1998 PLASTIC PACKAGE/ASSEMBLY DESCRIPTION

9749

Contextual Info: February 20, 1998 Errata Sheet for SX Silicon Revision 2.1 Date Code s : Known Issues: 9747, 9749, 9750 1. With Vpp > 13V, chips will be damaged in both serial or parallel programming modes Fix: Avoid applying Vpp > 12.5V, latest version of SX-Key hardware tested at

MIL-HDBK-263

Contextual Info: PD - 97494 IRG7CC10FB Features • Low VCE on • 3µs Short Circuit Capability • Square RBSOA C Benefits • Benchmark Efficiency for Motor Control Applications • Rugged Transient Performance • Low EMI G E 600V IC(nom)=5.0A VCE(on) typ.=1.6V @ IC(nom) @ 25°C

Contextual Info: PD - 97493C IRFH6200PbF HEXFET Power MOSFET V DS 20 V R DS on max 1.20 m Qg (typical) 155 nC R G (typical) 1.3  (@VGS = 4.5V) ID (@Tmb = 25°C) 100 h PQFN 5X6 mm A Applications •Charge and discharge switch for battery application Load switch for 12V (typical) bus

PQFN footprint

Abstract: diode marking 33a on semiconductor IRFH5210TR2PBF marking 33a on semiconductor AN-1154 IRFH5210TRPBF IRFH5210
Contextual Info: PD - 97490 IRFH5210PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 100 V 14.9 mΩ Qg (typical) RG (typical) 39 nC 1.8 Ω ID 55 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

AUIRFR3504Z

Abstract: AUFR3504Z AN-994
Contextual Info: PD - 97492 AUIRFR3504Z AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

Contextual Info: PD - 97492 AUIRFR3504Z AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *