SPP8 Search Results

SPP80P06P H

Abstract: SPP80P06PH spp80p06p PG-TO22
Contextual Info: SPP80P06P H SIPMOS  Power-Transistor Features Product Summary • P-Channel • P-Channel Drain source voltage • Enhancement mode · Enhancement mode Drain-source on-state resistance • Avalanche rated · Avalanche rated Continuous drain current • dv/dt rated

2N03L05

Abstract: 154W SPB80N03S2L-05 SPP80N03S2L-05
Contextual Info: SPP80N03S2L-05 SPB80N03S2L-05 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on 5 mΩ ID 80 A P-TO263-3-2 • Low on-resistance RDS(on) P-TO220-3-1 • Excellent Gate Charge x RDS(on) product (FOM)

SMD DIODE 615 200A

Abstract: 2N0303 SPB80N03S2-03 SPP80N03S2-03
Contextual Info: SPP80N03S2-03 SPB80N03S2-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3.1 m
ID 80 A P-TO263-3-2 Type

2N03L06

Abstract: s4089 SPB80N03S2L-06 SPI80N03S2L-06 SPP80N03S2L-06 OPTIMOS
Contextual Info: Preliminary data SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) P-TO262-3-1 VDS 30 RDS(on) max. SMD version 5.9 m
ID 80

DIODE H5 SMD

Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
Contextual Info: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package

2N06L06

Abstract: DIODE led SMD 5050 smd led 5050 datasheet SPB80N06S2L-06 SPP80N06S2L-06 ANPS071E smd diode marking 69a
Contextual Info: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 6.3 mΩ ID 80 A P- TO263 -3-2 • 175°C operating temperature P- TO220 -3-1 • Avalanche rated • dv/dt rated

SPB80N03S2-03

Abstract: SPP80N03S2-03
Contextual Info: SPP80N03S2-03 SPB80N03S2-03 Preliminary data OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 30 V • Drain-source on-state resistance RDS on 3.4 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated

2N0608

Abstract: Q67040-S4284 AS3500 SPB80N06S2-08 SPP80N06S2-08 2N060
Contextual Info: SPP80N06S2-08 SPB80N06S2-08 Preliminary data OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V • Drain-source on-state resistance RDS on 8 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated

SPB80N04S2-04

Abstract: SPP80N04S2-04
Contextual Info: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 40 V • Drain-source on-state resistance RDS on 3.9 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated

SPB80N04S2L-04

Abstract: Q67040-S4261
Contextual Info: Preliminary data SPP80N04S2L-04 SPB80N04S2L-04 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 40 V • Drain-source on-state resistance RDS on 3.6 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated

2n03l03

Abstract: 2N03L SPB80N03S2L-03 ANPS071E SPI80N03S2L-03 SPP80N03S2L-03 INFINEON PART MARKING to263
Contextual Info: SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 2.8 mΩ ID 80 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2

2N06L11

Abstract: ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 Q67060-S6035 2N06L
Contextual Info: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 11 mΩ ID 80 A • Logic Level • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code

2N06L05

Abstract: INFINEON PART MARKING SPB80N06S2L-05 SPP80N06S2L-05 402VGS
Contextual Info: SPP80N06S2L-05 SPB80N06S2L-05 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on max. SMD version 4.5 mΩ • Logic Level ID 80 A •=175°C operating temperature P-TO263-3-2 • Enhancement mode P-TO220-3-1

2n0605

Abstract: BSPP80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 6020G 6840H
Contextual Info: SPP80N06S2-05 SPB80N06S2-05 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on max. SMD version 4.8 mΩ •=175°C operating temperature ID 80 A • Avalanche rated P-TO263-3-2 • Enhancement mode P-TO220-3-1

2N04L03

Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03 28BE
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 3.1 mΩ • Logic Level ID 80 A • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated

Contextual Info: Infineon SPP80P06P SPB80P06P Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance ñ DS on • Avalanche rated Continuous drain current

Contextual Info: SPP80P06P SPB80P06P G SIPMOS  Power-Transistor Features Product Summary • P-Channel • P-Channel Drain source voltage • Enhancement mode · Enhancement mode Drain-source on-state resistance • Avalanche rated · Avalanche rated Continuous drain current

BUZ111SL

Abstract: Q67040-S4003-A2 SPP80N05
Contextual Info: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

SPP80N05

Abstract: Q67040-S4005-A2
Contextual Info: BUZ 110 S SPP80N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 110 S 55 V

transistor buz 350

Abstract: Q67040-S4004-A2
Contextual Info: BUZ 110 SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

2N06LH5

Contextual Info: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated

2n0609

Abstract: Q67060-S6025 Q67060-S6027 SPP80N06S2-09 3140PF 2N060 INFINEON PART MARKING to263
Contextual Info: SPP80N06S2-09 SPB80N06S2-09 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 55 R DS on 9.1 m
ID 80 A P- TO263 -3-2
Avalanche rated V P- TO220 -3-1
dv/dt rated Type SPP80N06S2-09 Package

Q67042-S4016

Contextual Info: SPP80P06P SPB80P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS · Enhancement mode Drain-source on-state resistance RDS on · Avalanche rated Continuous drain current ID · dv/dt rated · 175°C operating temperature

spp80p06p

Contextual Info: SPP80P06P H SIPMOS  Power-Transistor Features Product Summary • P-Channel • P-Channel Drain source voltage • Enhancement mode · Enhancement mode Drain-source on-state resistance • Avalanche rated · Avalanche rated Continuous drain current • dv/dt rated