2N0608
Abstract: Q67040-S4284 AS3500 SPB80N06S2-08 SPP80N06S2-08 2N060
Contextual Info: SPP80N06S2-08 SPB80N06S2-08 Preliminary data OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V • Drain-source on-state resistance RDS on 8 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated
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spp80n06s2-08spb80n06s2-08p-to220-3-1q67040-s4283+52n0608p-to263-3-2q67040-s4284as35002n060
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2n0608
Abstract: SP000218830 i 2n0608 IPI80N06S2-08 IPB80N06S2-08 IPP80N06S2-08 PG-TO263-3-2 marking D58
Contextual Info: IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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ipb80n06s2-08ipp80n06s2-08ipi80n06s2-08pg-to263-3-2+7pg-to220-3-1pg-to262-3-1sp0002-188302n0608sp000218830i 2n0608marking d58
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2n0608
Abstract: 6040-H smd marking 58a SPB80N06S2-08 Q67060-S7430 200A 55V ANPS071E SPI80N06S2-08 SPP80N06S2-08 Q67060-S4284
Contextual Info: SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P- TO262 -3-1 VDS 55 RDS on 8 m ID 80 A P- TO263 -3-2 Type Package Ordering Code
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spi80n06s2-08spp80n06s2-08spb80n06s2-08q67060-s4283+72n0608q67060-s42846040-hsmd marking 58aq67060-s7430200a 55vanps071e
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2n0608
Abstract: i 2n0608 Q67060-S4284 ANPS071E SPB80N06S2-08 SPI80N06S2-08 SPP80N06S2-08 smd marking 58a
Contextual Info: SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID 175°C operating temperature P- TO262 -3-1 Avalanche rated V m 8 80 P- TO263 -3-2 A P- TO220 -3-1 dv/dt rated
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spi80n06s2-08spp80n06s2-08spb80n06s2-08q67060-s4283+6q67060-s42842n0608q67060-s7430i 2n0608anps071esmd marking 58a
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2N0608
Abstract: ANPS071E SPB80N06S2-08 SPI80N06S2-08 SPP80N06S2-08 smd marking 58a SMD marking code 58A
Contextual Info: SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on ID • 175°C operating temperature • Avalanche rated 55 P- TO262 -3-1 V 8 mΩ 80 P- TO263 -3-2 A P- TO220 -3-1
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spi80n06s2-08spp80n06s2-08spb80n06s2-08q67060-s4283+6q67060-s42842n0608q67060-s7430anps071esmd marking 58asmd marking code 58a
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2n0608
Abstract: Q67040-S4283 smd marking 58a SPB80N06S2-08 SPP80N06S2-08
Contextual Info: SPP80N06S2-08 SPB80N06S2-08 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID •=175°C operating temperature • Avalanche rated V 8 mΩ 80 P-TO263-3-2 A P-TO220-3-1 • dv/dt rated
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spp80n06s2-08spb80n06s2-08p-to263-3-2p-to220-3-1+4q67040-s4283q67040-s42842n0608smd marking 58a
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2n0608
Abstract: smd marking 58a
Contextual Info: SPP80N06S2-08 SPB80N06S2-08 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 8 mΩ ID 80 A • Enhancement mode •=175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated Type
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spp80n06s2-08spb80n06s2-08p-to220-3-1p-to263-3-2+4q67040-s4283q67040-s42842n0608smd marking 58a
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