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    IPB80N06S2-08 Search Results

    IPB80N06S2-08 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPB80N06S2-08
    		Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 7.7 mOhm; ID (max): 80.0 A; RthJC (max): 0.7 K/W; Original PDF 159.53KB 8
    IPB80N06S208ATMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 Original PDF 155.4KB
    IPB80N06S208ATMA2
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 Original PDF 160.56KB
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    IPB80N06S2-08 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB80N06S208ATMA2

    MOSFET N-CH 55V 80A TO263-3
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    DigiKey IPB80N06S208ATMA2 Reel
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    Verical IPB80N06S208ATMA2 2,000 215
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    • 1000 $1.56
    • 10000 $1.48
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    Rochester Electronics IPB80N06S208ATMA2 2,000 1
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    • 100 $1.40
    • 1000 $1.25
    • 10000 $1.18
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    Chip Stock IPB80N06S208ATMA2 615
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    Vyrian IPB80N06S208ATMA2 1,370
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    Infineon Technologies AG IPB80N06S208ATMA1

    MOSFET N-CH 55V 80A TO263-3
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    DigiKey IPB80N06S208ATMA1 Reel
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    Rochester Electronics IPB80N06S208ATMA1 128 1
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    • 100 $0.78
    • 1000 $0.65
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    Vyrian IPB80N06S208ATMA1 1,759
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    Infineon Technologies AG IPB80N06S2-08

    POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 55V, 0.0077OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IPB80N06S2-08 97
    • 1 $1.88
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    • 100 $1.13
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    Infineon Technologies AG IPB80N06S208

    Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA IPB80N06S208 8,645
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