IPB80N06S2-08 Search Results
IPB80N06S2-08 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPB80N06S2-08 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 7.7 mOhm; ID (max): 80.0 A; RthJC (max): 0.7 K/W; | Original | 159.53KB | 8 | ||
| IPB80N06S208ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 | Original | 155.4KB | |||
| IPB80N06S208ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 | Original | 160.56KB |
IPB80N06S2-08 Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPB80N06S208ATMA2MOSFET N-CH 55V 80A TO263-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB80N06S208ATMA2 | Tape & Reel |
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IPB80N06S208ATMA2 | 2,000 | 213 |
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IPB80N06S208ATMA2 | 2,000 | 1 |
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IPB80N06S208ATMA2 | 615 |
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Infineon Technologies AG IPB80N06S208ATMA1MOSFET N-CH 55V 80A TO263-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB80N06S208ATMA1 | Tape & Reel |
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Buy Now | |||||||
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IPB80N06S208ATMA1 | 128 | 1 |
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IPB80N06S208ATMA1 | 3,605 |
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Infineon Technologies AG IPB80N06S208Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB80N06S208 | 8,645 |
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