SPD30N03 Search Results

SPU30N03L

Contextual Info: SPD30N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance RDS on 0.012 Ω • Avalanche rated Continuous drain current ID 30 V 30 A • Logic Level • dv/dt rated

Contextual Info: SPD30N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
Logic Level VDS 30 V R DS on 10 m
ID 30 A P- TO252 -3-11
Low On-Resistance RDS(on)
Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance

TO252 thermal character

Abstract: ANPS071E SPD30N03S2L-07 SPD30N03S2L-07G max2958 f1816
Contextual Info: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature

2N03L10

Abstract: ANPS071E SPD30N03S2L-10
Contextual Info: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) P- TO252 -3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance

1412G

Abstract: ANPS071E P-TO252-3-11 SPD30N03S2L-07
Contextual Info: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) P-TO252-3-11 • Superior thermal resistance • 175°C operating temperature

2n03l08

Abstract: P-TO252 SPD30N03S2L-08 max2958
Contextual Info: Preliminary data SPD30N03S2L-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel · Enhancement mode · Logic Level · Excellent Gate Charge x RDS on product (FOM) · Superior thermal resistance · 175°C operating temperature · Avalanche rated

2n03l

Abstract: PG-TO252-3 ANPS071E 2N03L07 DT SMD 2N03 spd30n
Contextual Info: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature

2N03L20

Abstract: BSPD30N03S2L-20 SPD30N03S2L-20
Contextual Info: SPD30N03S2L-20 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 V RDS on 20 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) •=175°C operating temperature P-TO252-3-1 • Avalanche rated

2N03L10

Abstract: P-TO252 SPD30N03S2L-10
Contextual Info: SPD30N03S2L-10 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 RDS on • Logic Level ID • Low on-resistance RDS(on) V 10.4 mΩ 30 • Excellent Gate Charge x RDS(on) product (FOM) A P-TO252 •=Superior thermal resistance

2N03L10

Abstract: TO252 thermal character TO252 rthjc ANPS071E SPD30N03S2L-10
Contextual Info: SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ • Logic Level ID 30 A • Low On-Resistance R DS(on) PG-TO252-3 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance

2N03L20

Contextual Info: SPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 20 mΩ •Logic Level ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO252 -3-11 •Superior thermal resistance •175°C operating temperature

2N03L10

Contextual Info: SPD30N03S2L-10 G Opt iMOS  Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ • Logic Level ID 30 A PG-TO252-3 • Low On-Resistance R DS(on) • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance

Contextual Info: SPD30N03S2L-20 G Opt iMOS  Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 20 mΩ • Logic Level ID 30 A PG- TO252 -3 • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature

SPD30N03

Abstract: P-TO251-3-1 P-TO252 SPU30N03 Q67040-S4146-A2
Contextual Info: SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on SPD30N03 30 V 30 A 0.015 Ω Pin 1 Pin 2 Pin 3 G D S Package @ VGS VGS = 10 V P-TO252

2n03l

Abstract: SPD30N03S2L-07 2N03 2N03L07 spd30n
Contextual Info: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3-11 • Superior thermal resistance • 175°C operating temperature

Contextual Info: SPD30N03S2L-10 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 RDS on • Logic Level ID • Low on-resistance RDS(on) V 10.4 mΩ 30 • Excellent Gate Charge x RDS(on) product (FOM) A P-TO252 •=Superior thermal resistance

2N03L10

Abstract: 2N03L
Contextual Info: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 10 mΩ •Logic Level ID 30 A •N-Channel •Low On-Resistance RDS(on) P- TO252 -3-11 •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance

2n03l10

Abstract: 2N03L
Contextual Info: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) P-TO252-3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance

ANPS071E

Abstract: SPD30N03S2L-07 E30R
Contextual Info: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) P- TO252 -3-11 • Superior thermal resistance • 175°C operating temperature

transistor SMD QQ

Contextual Info: SPD30N03L SPU30N03L SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche rated • Logic Level • dvld t rated • 175°C operating temperature Type ^DS 30 V SPD30N03L b 30 A SPU30N03L f f DS on (5) VGS Pin 1 Pin 2 Pin 3 G D

smd diode code pj 70

Abstract: uras 10 pj 68 SMD diode smd diode code pj 50
Contextual Info: SIEMENS SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated f c * '' VPT09Q50 VPT09051 • dv/df rated • 175°C operating temperature Type SPD30N03 Yds 30 V b 30 A ^bS on 0.015 Q. @ VGS VQS = 10V

S2530

Contextual Info: SPD30N03S2L-07 OptiMOS  Buck converter series • N-Channel Product Summary VDS 30 V • Enhancement mode RDS on 6.7 mΩ • Logic Level ID 30 A Feature • Excellent Gate Charge x RDS(on) product (FOM) P- TO252 -3-11 • Superior thermal resistance • 175°C operating temperature

P-TO251-3-1

Abstract: P-TO252 SPD30N03 SPU30N03 spd30n03a
Contextual Info: SPD30N03 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.015 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 30 A • dv/dt rated • 175°C operating temperature

N03L08

Abstract: P-TO252 SPD30N03S2L-08
Contextual Info: Preliminary data SPD30N03S2L-08 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 30 V • Drain-source on-state resistance RDS on 7.5 mΩ Continuous drain current ID 30 A Enhancement mode • Avalanche rated