SP12 PACKAGE TYPE 6 Search Results

transistor sp 772

Contextual Info: Power Transistor RT232 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 19dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.14GHz

Contextual Info: Power Transistor RT232 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 19dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.14GHz

5252 F 1108

Abstract: 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211
Contextual Info: B 2 S A series P 5 5 6 8 8 8 6 6 6 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 9 5 5 5 5 5 5 5 5 5 6 5 5 8 8 8 6 P*c*^aeoda TO-92 TO-92 TO-92 TO-126M TO-126M TO-126M TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92

Contextual Info: Weller Marksman Mini Iron 12 Watt Product Details Catalog No. SP12 UPC Code 037103479716 Type Non-temperature Controlled Wattage 12 W Temperature 750° F Range Cord Length 6 ft. Components MT70 Supplied Packaging Peg Hook/Retail Packaging Tech. Spec. Solder_Safety_Warnings.pdf

12V RELAY 5 PIN DIAGRAM spdt

Abstract: SP12SELQD SP12SRLQD relay socket lr38486 LR38486 5 pin 12v relay pin drawing diagrams schematic AC inductive proximity sensor inductive proximity sensor transistor schematic AP12SR SP12 PACKAGE TYPE 6
Contextual Info: t ns uc tio od ca Pr ne ifi Li pec S MAXI-AMP System Stand-alone sensor control modules • Versatile, cost-effective sensor control modules: models available for use with most Banner photoelectric sensors • Power supply, photoelectric amplifier CD and CM

6AM12

Abstract: SP12TA 2sk970 SP12 PACKAGE TYPE 6 2SK971 4AK16 2SK972 2SK973 2SK97-1 4AK15
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

Contextual Info: RWDUIT Grounding Connectors Bronze Service Post Connectors Type SPl Male-One Cable For grounding one conductor to steel structures, fence posts or transformers For tapping from bus bar Made from hard drawn copper rod U.L. Listed per 467 for direct burial Part

SP24L

Abstract: SP12 PACKAGE TYPE 6
Contextual Info: RWDUIT Grounding Connectors Bronze Service Post Connectors Type SP1 MEW / Male-One Cable • For grounding one conductor to steel structures, fence posts or transformers • For tapping from bus bar • Made from hard drawn copper rod • UL LISTED per 467 for

transistor z3

Abstract: TRANSISTOR Z4
Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-max

2SK1778

Abstract: 2SK971 2SK970 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17 4AK18
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2SK1275

Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2SK1778

Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

HITACHI Power MOSFET Arrays

Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

Contextual Info: Agilent PXI Digital I/O Control Module Data Sheet M9187A • Flexible configuration of 32 channels for independent input and output or configurable I/O • Programmable input thresholds and flexible output drive capability • Robust input and output protection

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

transistor C4

Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max

TRANSISTOR Z4

Abstract: transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z4 51 transistor z3 rt230pd IRF 1470
Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max

Contextual Info: MMIC AP2301 `Product Features Application • Small size • SMD Type Package • NO matching circuit needed • High efficiency • Dual supply voltage • Higher linearity • 12 pin Air cavity package • Higher productivity • Lower manufacturing cost

hitachi mosfet audio

Abstract: D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 2sk2829 Hitachi MOSFET 2SK1058 transistors 2SK1317
Contextual Info: Power MOSFET Quick Reference Literature Order Number Revision Number Hitachi Semiconductor Author Name When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole

TLE4941-1C

Abstract: piezo air pressure sensor IC hall sensor smd 80 L TLE4990 Programming Guide shock sensor airbag siemens 4 Pin SMD Hall sensors KP110 P-SOT-23 TLE4942-1C tle4941c
Contextual Info: 2003191_Selection_Guide_16 21.07.2004 17:50 Uhr Seite 3 Pressure Sensor ICs – Hall ICs – Temperature Sensors Converting ENVIRONMENT to Data Complete AUTOMOTIVE Sensor Solutions w w w. i n f i n e o n . c o m / s e n s o r s Never stop thinking. 2003191_Selection_Guide_16

AP2301

Abstract: AP230S12 PMBG-SQFP-12 150M 2000M SP12 a 741 j 744 771 20 smd 718 37dBmV
Contextual Info: MMIC AP2301 Old part#: AP230S12 `Product Features Application • Small size • SMD Type Package • NO matching circuit needed • High efficiency • Dual supply voltage • Higher linearity • 12 pin Air cavity package • Higher productivity • Lower manufacturing cost

MSM63V89C

Abstract: MSM6595A MSM6596A MSM6597A MSM6685 MSM7708-02 TQFP64-P-1010-0 ST12 encoder ST12 encoder decoder
Contextual Info: E2U0044-16-X2 ¡ Semiconductor MSM7708-02 ¡ Semiconductor This version: Jan. 1998 MSM7708-02 Previous version: Nov. 1996 Serial Register Interface ADPCM CODEC for Telephone Recording GENERAL DESCRIPTION The MSM7708-02 is a CMOS IC developed for applying to PHS Personal Handyphone System .

SP12 PACKAGE TYPE 6

Contextual Info: E2U0044-16-X2 O K I Semiconductor This version: Jan. 1998 Previous version: Nov. 1996 MSM7708-02 Serial Register Interface ADPCM CODEC for Telephone Recording GENERAL DESCRIPTION The MSM7708-02 is a CMOS IC developed for applying to PHS Personal Handyphone System .

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC